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    PHOTODIODE AVALANCHE PHOTODIODE APD FOR POWER G Search Results

    PHOTODIODE AVALANCHE PHOTODIODE APD FOR POWER G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    PHOTODIODE AVALANCHE PHOTODIODE APD FOR POWER G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M6017

    Abstract: for APD bias high-voltage
    Text: MODULE Power supply for APD M6017 Power supply module for APD M6017 is a high-voltage power supply module that generates a high voltage DC voltage necessary to operate an APD (avalanche photodiode) with an adequate gain. By supplying an external control voltage (0 to +3 V) or connecting a variable resistor, M6017 provides an APD with a bias


    Original     		PDF M6017 M6017 SE-171 KACC1064E01 for APD bias high-voltage

    10G APD chip

    Abstract: PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PSS-AD230-2
    Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD230-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD230-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a


    Original     		PDF PSS-AD230-2 10G APD chip PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps

    10G APD chip

    Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
    Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a


    Original     		PDF PSS-AD500-1 10G APD chip Photodiode apd amplifier 500 watts amplifier schematic diagram 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500

    10G APD chip

    Abstract: westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram
    Text: DATA SHEET PSS-AD500-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD-500-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5


    Original     		PDF PSS-AD500-2 PSS-AD-500-2 10G APD chip westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram

    InGaAs Epitaxx APD

    Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
    Text: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions


    Original     		PDF 1E-10 InGaAs Epitaxx APD EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver

    lidar apd model

    Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
    Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.


    Original     		PDF ED-13, ED-0017/03/8, C30902E/S, C30921 lidar apd model APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used


    Original     		PDF SAP500-Series

    photodiode preamplifier

    Abstract: Si apd photodiode APD bias gain photodiode Avalanche photodiode APD Photodiode cost sheet 25XV APD50 avalanche photodiode Photodiode apd amplifier SILICON APD Pre-Amplifier
    Text: DATA SHEET APD50 APD AVALANCHE PHOTODIODE PREAMPLIFIER A Si avalanche photodiode and low noise preamplifier module. A field effect transistor input stage ensures low HF noise and wide bandwidth. The bias voltage supply has temperature compensation to maintain the APD. gain constant.


    Original     		PDF APD50 APD50 D-12459 photodiode preamplifier Si apd photodiode APD bias gain photodiode Avalanche photodiode APD Photodiode cost sheet 25XV avalanche photodiode Photodiode apd amplifier SILICON APD Pre-Amplifier

    Untitled

    Abstract: No abstract text available
    Text: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in


    Original     		PDF SAP500-Series

    EMCORE APD

    Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
    Text: PRELIMINARY DATASHEET | DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH


    Original     		PDF OC-48, STM-16, OC-48 STM-16 EMCORE APD avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5

    FU-319SPA-CV6

    Abstract: 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz
    Text: MITSUBISHI OPTICAL DEVICES FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.


    Original     		PDF FU-319SPA-CV6 FU-319SPA-CV6 -33dBm OC-48, STM-16) 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz

    photodiode Avalanche photodiode

    Abstract: InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note FU-319SPA-CV6 459b STM-16 TZ7-99-459B mitsubishi APD APD, applications, bias supply
    Text: TZ7-99-459B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.


    Original     		PDF TZ7-99-459B FU-319SPA-CV6 FU-319SPA-CV6 -33dBm OC-48, STM-16) 86GHz, photodiode Avalanche photodiode InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note 459b STM-16 mitsubishi APD APD, applications, bias supply

    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX
    Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb


    Original     		PDF 578BKX InGaAs Epitaxx APD Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX

    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
    Text: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter


    Original     		PDF 578DKX InGaAs Epitaxx APD Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier

    Untitled

    Abstract: No abstract text available
    Text: EVALUATION KIT AVAILABLE MAX24011 General Description The MAX24011 is a low-power and high-sensitivity 2.5Gbps continuous mode transimpedance amplifier TIA optimized for GPON fiber optic applications. The MAX24011 implements a complete analog front-end,


    Original     		PDF MAX24011 MAX24011

    723 voltage regulator internal diagram

    Abstract: transistor 2ap umx901 Photodiode apd amplifier Photodiode apd RSSI avalanche photodiode bias
    Text: EVALUATION KIT AVAILABLE MAX24011 General Description The MAX24011 is a low-power and high-sensitivity 2.5Gbps continuous mode transimpedance amplifier TIA optimized for GPON fiber optic applications. The MAX24011 implements a complete analog front-end,


    Original     		PDF MAX24011 MAX24011 723 voltage regulator internal diagram transistor 2ap umx901 Photodiode apd amplifier Photodiode apd RSSI avalanche photodiode bias

    InGaAs Epitaxx APD

    Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver
    Text: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current


    Original     		PDF

    S13081

    Abstract: APD Arrays
    Text: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits


    Original     		PDF org/abs/1003 6071v2 S13081 APD Arrays

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as


    Original     		PDF C30985E 25-Element C30985E

    avalanche photodiode bias

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX avalanche photodiode bias

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX

    InGaAs Epitaxx APD

    Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
    Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown


    Original     		PDF 578XCX 578XCX. InGaAs Epitaxx APD receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF