Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E01
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E02
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silicon photodiode array
Abstract: Photodiode Array 32 element Photodiode VTA1264 transistor a1264 A1264 Photodiode-Array 550NM photodiode Photodiode-Array 64-element photodiode array
Text: D A T A S H E E T Optoelectronics Preliminary Data Sheet VTA1264 64-Element Silicon Photodiode Array Description Applications This is a 64-element photodiode array consisting of 64 discrete silicon PN photodiodes elements , with 32 mounted on each side of the PC board. The
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VTA1264
64-Element
0022in2
4097mm2)
silicon photodiode array
Photodiode Array 32 element
Photodiode
VTA1264
transistor a1264
A1264
Photodiode-Array
550NM photodiode
Photodiode-Array 64-element
photodiode array
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ON 4408
Abstract: scintillator EPA-4408 Photodiode Array 32 element EPA-4416 EPA-4432
Text: ELEKON Phtodiode Array EPA-4408 An 8, 16, 32 element photodiode scintillator array suitable for a wide range of X-Ray and scanning applications. Features high sensitivity, uniform response and minimal cross talk between elements. Available with various choices of phosphorus screens or
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EPA-4408
100mA
540nm
EPA-4416
EPA-4432
ON 4408
scintillator
EPA-4408
Photodiode Array 32 element
EPA-4416
EPA-4432
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Photodiode-Array 32-element
Abstract: Photodiode Array 32 element 16 Photodiode-Array PDB-C232 photodiode linear array
Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 32 Element Type PDB-C232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12
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PDB-C232
1x10-14
100-PDB-C232
Photodiode-Array 32-element
Photodiode Array 32 element
16 Photodiode-Array
PDB-C232
photodiode linear array
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silicon photodiode array
Abstract: Photodiode Array 32 element blue enhanced photodiode array 16 Photodiode-Array PDB-V232
Text: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 32 Element Type PDB-V232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13
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PDB-V232
1x10-14
100-PDB-V232
silicon photodiode array
Photodiode Array 32 element
blue enhanced photodiode array
16 Photodiode-Array
PDB-V232
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Untitled
Abstract: No abstract text available
Text: Silicon Photodiode Array, Photoconductive 32 Element Type PDB-C232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 0.050 [1.27]
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PDB-C232
1x10-14
100-PDB-C232
pdb-c232
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germanium photodiode PIN
Abstract: linear array photodiode element photodiode ge 40P500 Ge dual photodiode photodiode array photodiode germanium
Text: E G gg JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 j^m Description Applications S ta n d a rd packaging an d elem ent configurations re s u lt in low cost and quick delivery for J1 6 P S eries highq u ality G erm anium photodiode array s. The 16-elem ent and 32-elem ent lin e ar
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16-element
32-element
40P-S01
germanium photodiode PIN
linear array photodiode element
photodiode ge
40P500
Ge dual photodiode
photodiode array
photodiode germanium
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s4114 driver
Abstract: Photodiode Array 32 element C9004
Text: Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from
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S4111/S4114
S4111
SE-171
KMPD1002E07
s4114 driver
Photodiode Array 32 element
C9004
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Untitled
Abstract: No abstract text available
Text: Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from
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S4111/S4114
SE-171
KMPD1002E07
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CTP20
Abstract: photodiode linear array
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E05
CTP20
photodiode linear array
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E05
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16 Photodiode-Array
Abstract: linear uv photodiode array Photodiode Array 32 element S4114-35Q S4114-46Q S4111 S4111-16Q S4111-16R S4111-35Q S4111-46Q
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E06
16 Photodiode-Array
linear uv photodiode array
Photodiode Array 32 element
S4114-35Q
S4114-46Q
S4111
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
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S4111
Abstract: S4111-16Q S4111-16R S4111-35Q S4111-46Q S4114-35Q S4114-46Q Photodiode Array 32 element
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E05
S4111
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
Photodiode Array 32 element
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Photodiode Array 32 element
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E04
Photodiode Array 32 element
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S4111
Abstract: S4111-16Q S4111-16R S4111-35Q S4111-46Q S4114-35Q S4114-46Q KMPDB0113EA
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E06
S4111
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
KMPDB0113EA
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 16 x 16 element Si PIN photodiode array S3805 For high-speed 2D photometry by parallel readout S3805 is a 16 × 16 element PIN photodiode array developed for 2D photometry. Each element is closely arranged to provide a high effective area ratio. The entire array is mounted on an easy-to-use PC board. The output from each element can be read out in parallel or randomly, thus
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S3805
S3805
SE-171
KMPD1011E05
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Untitled
Abstract: No abstract text available
Text: Photodiode Arrays for x-ray Security Scanning Left: 16 Element, 1.6 mm Pitch Photodiode Array With Segmented Csi Scintillator. Right: 16 Element, 2.5 mm Pitch Photodiode Array With GOS Low Energy Screen Scintillator. Photodiode Arrays – VTA Series Applications
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VTA2164H-D
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Photodiode-Array
Abstract: S3954 Photodiode Array 32 element qe 200 KMPD1041E01 SE-171
Text: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm
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76-element
S3954
78-lead
SE-171
KMPD1041E01
Photodiode-Array
S3954
Photodiode Array 32 element
qe 200
KMPD1041E01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm
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76-element
S3954
78-lead
SE-171
KMPD1041E02
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Photodiode Array 32 element
Abstract: No abstract text available
Text: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm
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76-element
S3954
78-lead
SE-171
KMPD1041E02
Photodiode Array 32 element
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Untitled
Abstract: No abstract text available
Text: E P I T A X X INC SME 33bG40b QOGGGTS 0 D ÉEPITAXX ETX 30LA 8,16 & 32 InGaAs Linear Photodiode Arrays " T ^ l-S S Description: EPITAXX ETX 30LA 8 ,1 6 and 32 are linear arrays of 8,1 6 and 32 InGaAs photodiodes. The individual elements are 30 micrometer square and can be individually addressed. The
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33bG40b
33fci040b
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InGaAs Epitaxx
Abstract: InGaAs Epitaxx linear Photodiode-Array EPITAXX 16 Photodiode-Array linear array photodiode element Photodiode Array 32 element 30LA ETX30LA8 Photodiode Array linear
Text: EP I T A X X INC EME D 33bQ4Db OOQOGTS □ jI e p it a x x ETX 30 LA 8 , 1 6 & 3 2 InGaAs Linear Photodiode Arrays Description: EPITAXX ETX 30LA 8,16 and 32 are linear arrays of 8,16 and 32 InGaAs photodiodes. The individual elements are 30 micrometer square and can be individually addressed. The
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33bD4Db
ETX30LA8
33tiG40b
InGaAs Epitaxx
InGaAs Epitaxx linear
Photodiode-Array
EPITAXX
16 Photodiode-Array
linear array photodiode element
Photodiode Array 32 element
30LA
Photodiode Array linear
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CCD4156
Abstract: ccd 512 x 512
Text: CCD456 512 x 512 Element Interline High Frame Rate Sensor FEATURES 512 x 512 Photosite Array • 17µ µm x 17µ µm Pixel Size • 8.70 mm x 8.70 mm Active Image Area • 512 x 512 Optically Active Pixels • 19 % Fill Factor • Over 1000 FPS Capable • Anti-blooming to 1000X
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CCD456
1000X
ccd4156
512x512
ccd 512 x 512
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