quadrant photodiode
Abstract: photodiode array encoder photodiode encoder KMPD1054E01 S8594 SE-171 spot light size photodiode PIN photodiode chip GaP photodiode
Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm
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S8594
S8594
SE-171
KMPD1054E01
quadrant photodiode
photodiode array encoder
photodiode encoder
KMPD1054E01
spot light size photodiode
PIN photodiode chip
GaP photodiode
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GaP photodiode
Abstract: quadrant photodiode
Text: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm
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S8594
S8594
SE-171
KMPD1054E01
GaP photodiode
quadrant photodiode
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Untitled
Abstract: No abstract text available
Text: Photodiode Arrays for x-ray Security Scanning Left: 16 Element, 1.6 mm Pitch Photodiode Array With Segmented Csi Scintillator. Right: 16 Element, 2.5 mm Pitch Photodiode Array With GOS Low Energy Screen Scintillator. Photodiode Arrays – VTA Series Applications
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VTA2164H-D
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photodiode amplifier
Abstract: 16 Photodiode-Array charge amplifier x-ray Photodiode-Array Preci-Dip LXF Series PHOTODIODE current voltage amplifier array S8865-128 S8865-64G simple Photodiode
Text: PHOTODIODE Photodiode array with amplifier S8865 series Photodiode array combined with signal processing circuit chip S8865 series is a Si photodiode array combined with a signal processing circuit chip. The signal processing circuit chip is formed by CMOS
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S8865
S8865-64:
S8865-12phone:
SE-171
KMPD1071E01
photodiode amplifier
16 Photodiode-Array
charge amplifier x-ray
Photodiode-Array
Preci-Dip
LXF Series
PHOTODIODE current voltage amplifier array
S8865-128
S8865-64G
simple Photodiode
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photodiode amplifier
Abstract: Photodiode-Array S8865-128 S8865 S8865-64 x-ray cmos IMAGE SENSOR
Text: PHOTODIODE Photodiode array with amplifier S8865 series Photodiode array combined with signal processing circuit chip S8865 series is a Si photodiode array combined with a signal processing circuit chip. The signal processing circuit chip is formed by CMOS
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S8865
S8865-64:
S8865-12phone:
SE-171
KMPD1071E01
photodiode amplifier
Photodiode-Array
S8865-128
S8865-64
x-ray cmos IMAGE SENSOR
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5483-08ax
Abstract: S6493-64 9 ELEMENT photoDIODE ARRAY 16 Photodiode-Array PHOTODIODE current voltage amplifier array chn 935 C6495 molex 5483 photodiode amplifier S6493
Text: PHOTODIODE Photodiode array with amplifier S6493/S6494 series Photodiode arrays combined with a signal processing circuit chip S6493 and S6494 series are Si photodiode arrays efficiently combined with a signal processing circuit. The signal processing circuit is formed on
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S6493/S6494
S6493
S6494
SE-171
KMPD1020E03
5483-08ax
S6493-64
9 ELEMENT photoDIODE ARRAY
16 Photodiode-Array
PHOTODIODE current voltage amplifier array
chn 935
C6495
molex 5483
photodiode amplifier
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
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S8865-256G
Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
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photodiode 256 elements
Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
photodiode 256 elements
PHOTODIODE 4 CHANNEL ARRAY
74HC32
KMPDC0222EA
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S8592
Abstract: photodiode array 16 Photodiode-Array KMPD1063E01 SE-171 9 ELEMENT photoDIODE ARRAY
Text: Patent Pending PHOTODIODE Si photodiode array S8592 1-D photodiode array with low cross-talk S8592 is a 1-D 16-element Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications
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S8592
S8592
16-element
18-pin
SE-171
KMPD1063E01
photodiode array
16 Photodiode-Array
KMPD1063E01
9 ELEMENT photoDIODE ARRAY
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S-8592
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si photodiode array S8592 1-D photodiode array with low cross-talk S8592 is a 1-D 16-element Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications
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S8592
S8592
16-element
18-pin
SE-171
KMPD1063E01
S-8592
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S4111-16R
Abstract: 16 Photodiode-Array S4111-16Q 9 ELEMENT photoDIODE ARRAY
Text: PHOTODIODE Si photodiode array S4111-16Q/-16R 16-element photodiode array S4111-16Q and S4111-16R are 16-element Si photodiode arrays in a ceramic DIP package. These photodiode arrays are chiefly developed for low-light-level detection such as spectrophotometers. S4111-16Q uses a quartz window that covers a wide spectral response range from UV
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S4111-16Q/-16R
16-element
S4111-16Q
S4111-16R
SE-171
16 Photodiode-Array
9 ELEMENT photoDIODE ARRAY
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Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si photodiode array S8593 2-D photodiode array with low cross-talk S8593 is a 2-D Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications l Low cross-talk
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S8593
S8593
28-pin
25phone:
SE-171
KMPD1064E01
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9 ELEMENT photoDIODE ARRAY
Abstract: 16 Photodiode-Array KMPD1064E01 S8593 SE-171 Photodiode Array 2d photodiode array spot light size photodiode 046b1
Text: Patent Pending PHOTODIODE Si photodiode array S8593 2-D photodiode array with low cross-talk S8593 is a 2-D Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications l Low cross-talk
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S8593
S8593
28-pin
SE-171
KMPD1064E01
9 ELEMENT photoDIODE ARRAY
16 Photodiode-Array
KMPD1064E01
Photodiode Array 2d
photodiode array
spot light size photodiode
046b1
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9 ELEMENT photoDIODE ARRAY
Abstract: No abstract text available
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11/-12
S5668-34
SE-171
KMPD1012E04
9 ELEMENT photoDIODE ARRAY
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S4111-16R
Abstract: linear uv photodiode array 9 ELEMENT photoDIODE ARRAY S4114-46Q S4111 S4111-16Q S4111-35Q S4111-46Q S4114-35Q 35-element
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E06
S4111-16R
linear uv photodiode array
9 ELEMENT photoDIODE ARRAY
S4114-46Q
S4111
S4111-16Q
S4111-35Q
S4111-46Q
S4114-35Q
35-element
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CTP20
Abstract: photodiode linear array
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E05
CTP20
photodiode linear array
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E05
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16 Photodiode-Array
Abstract: linear uv photodiode array Photodiode Array 32 element S4114-35Q S4114-46Q S4111 S4111-16Q S4111-16R S4111-35Q S4111-46Q
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E06
16 Photodiode-Array
linear uv photodiode array
Photodiode Array 32 element
S4114-35Q
S4114-46Q
S4111
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
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Photodiode Array 32 element
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E04
Photodiode Array 32 element
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S4111
Abstract: S4111-16Q S4111-16R S4111-35Q S4111-46Q S4114-35Q S4114-46Q KMPDB0113EA
Text: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
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S4111/S4114
SE-171
KMPD1002E06
S4111
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
KMPDB0113EA
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S5668-11
Abstract: ceramic scintillator 9 ELEMENT photoDIODE ARRAY
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11
S5668-34
SE-171
KMPD1012E06
ceramic scintillator
9 ELEMENT photoDIODE ARRAY
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9 ELEMENT photoDIODE ARRAY
Abstract: s566 linear array 50 pitch
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11
S5668-34
SE-171
KMPD1012E05
9 ELEMENT photoDIODE ARRAY
s566
linear array 50 pitch
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IR photodiode sensor
Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is
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16-ELEMENT
S5668
175mm
575mm
46-ELEMENT
C4351
IR photodiode sensor
Photodiode Array linear
C2334
linear array photodiode element
silicon linear photodiode array
photodiode linear array 256
silicon photodiode array
Photodiode Array 2d
Linear Image sensor IC
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