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    PHOTODIODE 500 NM Search Results

    PHOTODIODE 500 NM Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy

    PHOTODIODE 500 NM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    apd 400- 700 nm

    Abstract: No abstract text available
    Text: SSO-AD-500 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 Active area 1) 0,196 mm ∅ 500 µm


    Original     		SSO-AD-500 NIR-TO52 apd 400- 700 nm PDF

    RLT83500G

    Abstract: No abstract text available
    Text: RLT83500G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 m² Package: 9 mm PIN CONNECTION: 1 Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode


    Original     		RLT83500G rlt83500g PDF

    S7329-01

    Abstract: S7762 S8223 S8314
    Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.


    Original     		S7329-01 S7836-01 S8223 S8314 S7762 SE-171 KPIN1053E05 S7329-01 S7762 S8223 S8314 PDF

    S7836-01

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.


    Original     		SE-171 KPIN1053E04 S7836-01 PDF

    S8223

    Abstract: laser diode 780 nm S8314 photodiode S3321-04 S7329-01 S7762 S7836 S8314 L-P-410
    Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.


    Original     		S7329-01 S7836 S3321-04 S8223 S8314 S7762 SE-171 KPIN1053E03 S8223 laser diode 780 nm S8314 photodiode S3321-04 S7329-01 S7762 S7836 S8314 L-P-410 PDF

    nir source

    Abstract: apd 400- 700 nm
    Text: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm


    Original     		SSO-AD-500 NIR-TO52-S1 nir source apd 400- 700 nm PDF

    PerkinElmer Avalanche Photodiode

    Abstract: PerkinElmer Optoelectronics C30737E-230 C30737E-500 C30737 C30737P-230 C30737P-500
    Text: Optoelectronics C30737 Epitaxial Silicon Avalanche Photodiode Description Applications The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area


    Original     		C30737 C30737 LO09/01/04 PerkinElmer Avalanche Photodiode PerkinElmer Optoelectronics C30737E-230 C30737E-500 C30737P-230 C30737P-500 PDF

    PIN photodiode 500 nm

    Abstract: silicon pin photodiode laser detection S6795 DVD Laser pickup optical pickup unit dvd laser green laser dvd optical pickup optical pickup laser pickup dvd S7747
    Text: Si PIN PHOTODIODE S7747 6-element photodiode for violet laser detection FEATURES l Clear plastic molded package 454.8 mm l High sensitivity: 0.26 A/W Typ. (λ=410 nm) l High-speed response: 500 MHz Typ. (VR=5 V) APPLICATIONS l Violet to blue green laser detection


    Original     		S7747 S7747 S6795) KMPDB0103EA S6795 KMPDA0007EA PIN photodiode 500 nm silicon pin photodiode laser detection S6795 DVD Laser pickup optical pickup unit dvd laser green laser dvd optical pickup optical pickup laser pickup dvd PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-1300-0.5-1 04.07.2011 rev. 12 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIRregion (800-1700 nm)


    Original     		EPC-1300-0 D-12555 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPD-470-0-1.4 TECHNICAL DATA Selective Photodiode, TO-18 package GaP EPD-470-0-1.4 is a GaP based photodiode, mounted into a TO-18 housing. This device is featuring a narrow bandwidth and reduced spectral sensitivity at 400 – 500 nm. Specifications • •


    Original     		EPD-470-0-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-1300-0.5-1 16.05.2008 rev. 10 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIRregion (800-1700 nm)


    Original     		EPC-1300-0 D-12555 PDF

    RLT650-500-T

    Abstract: No abstract text available
    Text: RLT650-500-T TECHNICAL DATA High Power Visible Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 650 nm Optical Ouput Power: 500 mW Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN 1


    Original     		RLT650-500-T RLT650-500-T PDF

    fast photodiode amplifier

    Abstract: si photodiode G8336 G8336-02 S7861 S7861-02 S8334 S8334-02 GaAs photodiode
    Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series devices are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications.


    Original     		S8334/S7861/G8336 IEEE1394 S8334 S7861 G8336 SE-171 KPIN1042E01 fast photodiode amplifier si photodiode G8336-02 S7861-02 S8334-02 GaAs photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-1300-0.5-4 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm Ø 500 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the


    Original     		EPC-1300-0 D-12555 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC High Speed Epitaxial Photodiode, Photoconductive Type PDB-H103 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø.184 [4.67] .150 [3.81] .040 [1.02] Ø.155 [3.94] .060 [1.52] .500 [12.70] MIN C L 45° C L Ø.210 [5.33] PHOTODIODE C


    Original     		PDB-H103 100-PDB-H103 PDF

    s838

    Abstract: S8223 S7329-01
    Text: PREVIOUS DATA PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet


    Original     		S8387 SE-171 KPIN1053E02 s838 S8223 S7329-01 PDF

    laser diode 780 nm

    Abstract: S8223 S7329-01 S8314 photodiode Laser Diode 780 IR-Laser-Diode s7836 S3321-04 S7762 S8314
    Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet


    Original     		S8387 SE-171 KPIN1053E02 laser diode 780 nm S8223 S7329-01 S8314 photodiode Laser Diode 780 IR-Laser-Diode s7836 S3321-04 S7762 S8314 PDF

    TO52S1

    Abstract: alcohol sensor data sheet Pacific Silicon Sensor AD500-9 avalanche photodiode bias AD500 avalanche photodiode SSO-AD-500-9-TO52-S1 Silicon apd avalanche photodiode noise factor
    Text: AD500-9 TO52S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency > 80 % at λ 760 - 910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: AD500-9 TO52S1 Active Area 0.196 mm2 Ø 500 µm max. 5 nA


    Original     		AD500-9 O52S1 AD500-9 TO52S1 alcohol sensor data sheet Pacific Silicon Sensor avalanche photodiode bias AD500 avalanche photodiode SSO-AD-500-9-TO52-S1 Silicon apd avalanche photodiode noise factor PDF

    G8337

    Abstract: S8221 S8335 S-8335
    Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8335/S8221/G8337 series Receptacle type, 0.65/0.8 µm, 500 Mbps/1.25 • 2.1 Gbps S8335/S8221/G8337 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices


    Original     		S8335/S8221/G8337 IEEE1394 S8335 S8221 G8337 SE-171 KPIN1043E01 S-8335 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-1300-0.5-2 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the


    Original     		EPC-1300-0 D-12555 PDF

    photodiode InGaAs NEP

    Abstract: No abstract text available
    Text: Photodiode-Chip EPC-1300-0.5-3 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the


    Original     		EPC-1300-0 D-12555 photodiode InGaAs NEP PDF

    "Photo Diode"

    Abstract: dual photodiode fiber optical photo detector optical amplifier PHOTODIODE 708 photodiode amplifier Pulse-Width-Modulation Control Circuit SMA Package PDB-708
    Text: PHOTONIC DETECTORS INC. High Speed Detector Amplifier Hybrid Type PDB-708 PACKAGE DIMENSIONS INCH [mm] .205 [5.21] .162 [4.11] .500 [12.7] MIN PHOTODIODE CHIP 5 4 6 Ø.100 [Ø2.54] PIN CIRCLE Ø.184 [4.67] Ø.210 [5.33] Ø.155 [3.94] 3 1 PHOTODIODE OP-AMP


    Original     		PDB-708 PDB-708 100-PDB-708 "Photo Diode" dual photodiode fiber optical photo detector optical amplifier PHOTODIODE 708 photodiode amplifier Pulse-Width-Modulation Control Circuit SMA Package PDF

    PDB-708

    Abstract: No abstract text available
    Text: PHOTONIC DETECTORS INC. High Speed Detector Amplifier Hybrid Type PDB-708 PACKAGE DIMENSIONS INCH [mm] .205 [5.21] .162 [4.11] .500 [12.7] MIN PHOTODIODE CHIP 5 4 6 Ø.100 [Ø2.54] PIN CIRCLE Ø.184 [4.67] Ø.210 [5.33] Ø.155 [3.94] 3 1 PHOTODIODE OP-AMP


    Original     		PDB-708 PDB-708 100-PDB-708 PDF

    10G APD chip

    Abstract: westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram
    Text: DATA SHEET PSS-AD500-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD-500-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5


    Original     		PSS-AD500-2 PSS-AD-500-2 10G APD chip westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram PDF