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    PHOTODIODE 4 CHANNEL ARRAY Search Results

    PHOTODIODE 4 CHANNEL ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    PHOTODIODE 4 CHANNEL ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs photodiode Emcore

    Abstract: No abstract text available
    Text: PRODUCT BRIEF | FEBRUARY 10, 2004 1 x 4 GaAs PIN Photodiode Array Model 8485-1406 Features Data rates of 3.125 Gb/s per channel Excellent responsivity Uniform channel to channel characteristics Excellent crosstalk attenuation Low dark current EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is


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    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


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    PDF G8921-01 SE-171 KIRD1055E01

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


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    PDF G8921-01 SE-171 KGPD1009E02

    16 Photodiode-Array

    Abstract: Photodiode-Array SE-171 G8921-01 KGPD1009E02 GaAs photodiode operating temperature range
    Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


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    PDF G8921-01 SE-171 KGPD1009E02 16 Photodiode-Array Photodiode-Array G8921-01 KGPD1009E02 GaAs photodiode operating temperature range

    Photodiode-Array

    Abstract: G8921-01 KGPD1009E02 SE-171
    Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


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    PDF G8921-01 SE-171 KGPD1009E02 Photodiode-Array G8921-01 KGPD1009E02

    emcore

    Abstract: PHOTODIODE 4 CHANNEL ARRAY EMCORE photodiode GaAs photodiode Emcore photodiode die WAFER 1055 EMCORE photodiode array
    Text: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high


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    PDF 80x80 emcore PHOTODIODE 4 CHANNEL ARRAY EMCORE photodiode GaAs photodiode Emcore photodiode die WAFER 1055 EMCORE photodiode array

    photodiode die WAFER

    Abstract: GaAs photodiode Emcore PHOTODIODE 4 CHANNEL ARRAY emcore EMCORE photodiode array 50 um photodiode 1055 Photodiode Array
    Text: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high


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    PDF 80x80 photodiode die WAFER GaAs photodiode Emcore PHOTODIODE 4 CHANNEL ARRAY emcore EMCORE photodiode array 50 um photodiode 1055 Photodiode Array

    PIN-Photodiode-Array

    Abstract: EMCORE photodiode photodiode die WAFER PHOTODIODE 4 CHANNEL ARRAY 1055 GaAs photodiode Emcore PIN photodiode crosstalk
    Text: 1 x 4 GaAs PIN Photodiode Array preliminary information Product Description EMCORE’s 4 channel Gallium Arsenide (GaAs) PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high


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    PDF 80x80 PIN-Photodiode-Array EMCORE photodiode photodiode die WAFER PHOTODIODE 4 CHANNEL ARRAY 1055 GaAs photodiode Emcore PIN photodiode crosstalk

    Untitled

    Abstract: No abstract text available
    Text: 4 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 4.25 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Responsivity Active area diameter SYMBOL UNITS


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    PDF PIN-ULM-04-TN ULMPIN-04-TN-U0101U ULMPIN-04-TN-U0112U ULMPIN-04-TN-U0104U

    InGaAs array 1550nm

    Abstract: InGaAs Photodiode 1550nm Photodiode 1550nm bandwidth InGaAs photodiode array chip 1550nm photodiode 8 Ghz
    Text: KPA4-2N/8-2N 4/8 Channel InGaAs Photodiode Array Description 4- and 8-channel arrays with 250 micron (KPA4-2N and KPA8-2N, respectively) pitch are available as a standard product. Other number of channels, array pitch or a Si bench assembled array are available as


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    PDF 1550nm, -10dBm 04-04G InGaAs array 1550nm InGaAs Photodiode 1550nm Photodiode 1550nm bandwidth InGaAs photodiode array chip 1550nm photodiode 8 Ghz

    spcm-aq4c

    Abstract: PerkinElmer Avalanche Photodiode SPCM Arrays of Photon-Counting Detectors lidar apd model DTS1005 SPCM-AQ
    Text: The SPCM-AQ4C is a 4-channel photon counting card capable of detecting single photons of light over the wavelength range from 400 nm to 1060 nm. Each channel is independent from the others. The SPCM-AQ4C uses a unique silicon avalanche photodiode SliK that has a circular active


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    PDF 650nm. spcm-aq4c PerkinElmer Avalanche Photodiode SPCM Arrays of Photon-Counting Detectors lidar apd model DTS1005 SPCM-AQ

    PIN photodiode 850nm

    Abstract: VCSEL array, 850nm 4D469 4D470 VCSEL array, 850nm for fiber ribbon fiber connected photodiode fiber array fiber array mt 4channel fiber array Coupling to Fiber
    Text: PRODUCT INFORMATION 4D470 840nm LI Parallel Datacom, Telecom PIN Array This device consists of a 4-channel PIN Photodiode array in a miniature surface-mountable MT package. It is based on a unique combination of selfalignment technology and direct optical coupling to fiber, resulting in optimum coupling efficiency without need


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    PDF 4D470 840nm 4D469 850nm 1-800-96MITEL PIN photodiode 850nm VCSEL array, 850nm 4D470 VCSEL array, 850nm for fiber ribbon fiber connected photodiode fiber array fiber array mt 4channel fiber array Coupling to Fiber

    4D469

    Abstract: 4D470 VR33
    Text: PRODUCT INFORMATION 4D470 840nm LI Parallel Datacom, Telecom PIN Array This device consists of a 4-channel PIN Photodiode array in a miniature surface-mountable MT package. It is based on a unique combination of selfalignment technology and direct optical coupling to fiber, resulting in optimum coupling efficiency without need


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    PDF 4D470 840nm 4D469 850nm 4D470 VR33

    PHOTODIODE 4 CHANNEL ARRAY

    Abstract: No abstract text available
    Text: Agilent HDJD-S831-QT000 Color Sensor Module Data Sheet Description Agilent Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic


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    PDF HDJD-S831-QT000 QFN-16, 5989-2179EN PHOTODIODE 4 CHANNEL ARRAY

    HDJD-S831-QT333

    Abstract: QFN-16 PHOTODIODE 4 CHANNEL ARRAY
    Text: Agilent HDJD-S831-QT333 Color Sensor Module Data Sheet Description Agilent Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic


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    PDF HDJD-S831-QT333 QFN-16, 5989-2180EN HDJD-S831-QT333 QFN-16 PHOTODIODE 4 CHANNEL ARRAY

    color filter photodiode

    Abstract: Photodiode as light sensor tray 12X12 green light photodiode sensor
    Text: HDJD-S831-QT000 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic


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    PDF HDJD-S831-QT000 QFN-16, 5989-2179EN 5989-3617EN color filter photodiode Photodiode as light sensor tray 12X12 green light photodiode sensor

    HDJD-S833-QT333

    Abstract: PHOTODIODE 4 CHANNEL ARRAY Photodiode-Array QFN-16 resistor table lp622 Capacitor Selection Guide Photodiode as color light sensor with color filters color filter photodiode
    Text: HDJD-S833-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic


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    PDF HDJD-S833-QT333 QFN-16, AV02-0111EN HDJD-S833-QT333 PHOTODIODE 4 CHANNEL ARRAY Photodiode-Array QFN-16 resistor table lp622 Capacitor Selection Guide Photodiode as color light sensor with color filters color filter photodiode

    Untitled

    Abstract: No abstract text available
    Text: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic


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    PDF HDJD-S831-QT333 QFN-16, 5989-2180EN 5989-3259EN

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray


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    PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E02

    silicon photodiode array

    Abstract: 16 Photodiode-Array S8866-64 S8866-64G-02 KMPDC0072EA PHOTODIODE 4 CHANNEL ARRAY
    Text: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit, making the external circuit con¿guration simple. For X-ray detection applications, types S8866-64G-02, S8866-128G-02


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    PDF S8866-64/-128 S8866-64 S8866-128 S8866-64G-02, S8866-128G-02) S8866-64: S8866-128: SE-171 KMPD1104E01 silicon photodiode array 16 Photodiode-Array S8866-64G-02 KMPDC0072EA PHOTODIODE 4 CHANNEL ARRAY

    photodiode 460nm

    Abstract: HDJD-S822-QR999 LF-310 Photodiode-Array GS11 IPC-SM-782 QFN-16 11-LP
    Text: HDJD-S822-QR999 RGB Color Sensor Data Sheet Description Features HDJD-S822-QR999 is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three transimpedance amplifiers in a single monolithic CMOS IC


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    PDF HDJD-S822-QR999 HDJD-S822-QR999 QFN-16 AV02-0110EN photodiode 460nm LF-310 Photodiode-Array GS11 IPC-SM-782 11-LP

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and


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    PDF S8866-64/-128 S8866-64 S8866-128 S8866-64G-02, S8866128G-02) S8866-64: S8866-128: SE-171 KMPD1104E02

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray


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    PDF S8865-64G/-128G/-256G S8866-64G-02/-128G-02 C9118 S8865-256G. SE-171 KMPD1105E01

    vcsel array

    Abstract: FCC2 Coupling to Fiber
    Text: PRODUCT INFORMATION This device consists of a 4-channel PIN Photodiode array in a miniature sur­ face-m ountable MT package. It is based on a unique combination of self­ alignment technology and direct opti­ cal coupling to fiber, resulting in opti­ mum coupling efficiency without need


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    PDF 4D469 850nm vcsel array FCC2 Coupling to Fiber