Untitled
Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
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S8865-256G
Abstract: No abstract text available
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
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photodiode 256 elements
Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
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S8865-256,
S8865-256G
S8865-256
S8865-256G
SE-171
KMPD1087E01
photodiode 256 elements
PHOTODIODE 4 CHANNEL ARRAY
74HC32
KMPDC0222EA
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photodiode InGaAs NEP
Abstract: No abstract text available
Text: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A
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MXA-256-X
MXA-256-X
photodiode InGaAs NEP
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opto 2561
Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
opto 2561
2561 OPTO
MXA-256-1
MXA-256-2
photodiode 256 elements
PerkinElmer 1700
inGaAs photodiode 1550 array
InGaas PIN photodiode, 1550 NEP
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InGaas PIN photodiode, 1550 NEP
Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
InGaas PIN photodiode, 1550 NEP
PerkinElmer 1700
MXA-256-1
MXA-256-2
2561 OPTO
photodiode array 1550 nm
inGaAs photodiode 1550 array
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256CH
Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 Photodiode array combined with signal processing IC The S8865-64/-128/-256 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit,
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S8865-64/-128/-256
S8865-64/-128/-256
C9118
S8865-256.
SE-171
KMPD1071E02
256CH
9 ELEMENT photoDIODE ARRAY
simple Photodiode
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R800-10-012-20-001
Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,
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S8865-64/-128/-256
S8866-64-02/-128-02
S8865-64/-128/-256
S8866-64-02/-128-02
C9118
SE-171
KMPD1071E04
R800-10-012-20-001
S8865-64
16 Photodiode-Array
S8865 C9118
S8865-64G
S8866-64
S8866-64G-02
S8865-128
S8865-256
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,
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S8865-64/-128/-256
S8866-64-02/-128-02
C9118
SE-171
KMPD1071E03
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7404 not gate
Abstract: lm 7404 LM 7408 RL2048dag 7408 12V lm 7404 and pin configuration rl1024dag-111 RETICON RL 1024 rl1024dag 7408 ttl family
Text: Introduction D Series PerkinElmer's D Series image sensors 256, 512, 1024, 2048 Elements Photodiode Array are high-speed, self-scanned, chargecoupled photodiode CCPD arrays. The EVERYTHING IN A D Series Family, consisting of the NEW Standard and Wide Aperture image
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RL0256DAG-111
RL0512DAG-111
RL1024DAG-111
RL2048DAG-111
RL0256DKQ-111
RL0512DKQ-111
RL1024DKQ-111
RL2048DKQ-111
775-OPTO
7404 not gate
lm 7404
LM 7408
RL2048dag
7408 12V
lm 7404 and pin configuration
rl1024dag-111
RETICON RL 1024
rl1024dag
7408 ttl family
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be
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S8865-64/-128/-256
S8866-64-02/-128-02
S8865-64/-128/-256
S8866-64-02/-128-02
C9118
KMPD1071E08
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be
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S8865-64/-128/-256
S8866-64-02/-128-02
S8865-64/-128/-256
S8866-64-02/-128-02
C9118
provid33-
SE-171
KMPD1071E07
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process
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S11865-64/-128/-256
S11866-64-02/-128-02
S11865/S11866
S8865/S8866
B1201,
KMPD1134E04
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RETICON photodiode array 512
Abstract: RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
Text: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution
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sil-0703
D-65199
DSP-106
10/2001W
RETICON photodiode array 512
RL1202LGQ-711
RL1205LGQ-711
RETICON
RETICON 128
RL1210LGQ-711
RL1201LGQ-711
RETICON TB series sensors
Reticon photodiode array 1024 pixel
photodiode 256 elements silicon
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epitaxx
Abstract: No abstract text available
Text: EPITAXX INC 33b04Qb S 4E D EPITAXX DOODGT? M ETX 30 & 100MLA 64,128 & 256 T-m - ss InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;
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33b04Qb
100MLA
30MLA
30x30
100x30
epitaxx
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InGaAs Epitaxx linear
Abstract: D000G1 EPITAXX silicon photodiode array linear array photodiode element photodiode 256 elements silicon
Text: EP I T A X X INC 3 3 b 0 4 Qb OO OO CH ? 54E D EPITAXX M ETX30 & 100MLA 64,128 & 256 T M I-s s InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;
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33b04Qb
100MLA
30MLA
30x30
100x30
05x025
025X05
InGaAs Epitaxx linear
D000G1
EPITAXX
silicon photodiode array
linear array photodiode element
photodiode 256 elements silicon
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RETICON 128 application notes
Abstract: No abstract text available
Text: K Series JLeGsB RET1CON Wide Aperture Linear Photodiode Array W Introduction The EG&G Reticon K Series linear photodiode arrays are designed for applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or
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RL0128K
RL0256K
RC0100LNB-011/RC0104LNN-011
RC0100LNB-011/RC0105LNN-011
RC0100LNB-011/RC0106LNN-011
3D3D73Ã
RETICON 128 application notes
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RL1024KAQ011
Abstract: RL0256
Text: K Series J}^EBnG RETICON Wide Aperture Linear Photodiode Array Introduction The EG&G Relicon K Series linear photodiode arrays are designed tor applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or
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RL0128K
RL0256K
RC0100LNB-011/RC0104LNN-011
RC0100LNB-011/RC0105LNN-011
RC0100LNB-011/RC0106LNN-011
RL1024KAQ011
RL0256
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InGaAs photodiode
Abstract: LA512 linear array 50 pitch
Text: ETX 100MLA256 ETX 500MLA256 ETX 100MLA512 EFiTÂXX ETX“ °"“ 2“ Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 512 elements on 50 |im pitch ■ 30 im x 100 |jm or 25 |im x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm
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100MLA256
500MLA256
100MLA512
33hD4Db
InGaAs photodiode
LA512
linear array 50 pitch
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RETICON ccd
Abstract: No abstract text available
Text: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli cations. This product family provides unparalleled performance
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2048-Element
2048-elements,
RL0256PAQ-011
RL0512PAQ-011
RL1024PAQ-011
RL2048PAQ-011
RETICON ccd
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RL0256
Abstract: No abstract text available
Text: J VL V T Series Solid State Line Scanners e g &g r e t ic o n 64,128, 256, and 512 Elements General Description The Reticon T series is a family of monolithic self-scanning linear photodiode arrays optimized for application in spectroscopy. The devices in this series consist of a row of silicon photodiodes,
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LNN-O2O/RCI001
LNN-011
RC1000LNN-020/RC1001
RC1OOOLNN-O2O/RCI001
RL0256
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RL0256
Abstract: RETICON 1024s
Text: n J L S Series E G r G R E T IC O N io a S o lid stateL in e Scanners 128, 256, 512, and 1024 Elements General Description The Reticon S series is a family of monolithic self-scanning linear photodiode arrays optimized for application in spectros copy. The devices in this series consist of a row of silicon
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RL1024S
RL0128S
RL0256
RETICON 1024s
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Photodiode Array linear
Abstract: photodiode linear array Photodiode-Array photodiode 256 elements linear array photodiode element 16 Photodiode-Array InGaAs photodiode InGaAs Epitaxx linear photodiode 512 elements
Text: EPI I M ETX 10 0 M L A 2 5 6 ETX 5 0 0 M L A 2 5 6 ETX 100IM LA512 Ü Ü : Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 5 12 elements on 50 jam pitch ■ 30 im x 100 |jm or 25 (am x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm
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100MLA256
500MLA256
100MLA512
0DG02Ã
Photodiode Array linear
photodiode linear array
Photodiode-Array
photodiode 256 elements
linear array photodiode element
16 Photodiode-Array
InGaAs photodiode
InGaAs Epitaxx linear
photodiode 512 elements
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InGaAs photodiode
Abstract: photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements
Text: J k EGgG JUDSON Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elements configured in a linear orientation with standard array lengths in excess of one inch.
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50sec
3030b05
InGaAs photodiode
photodiode 256 elements
photodiode linear array 256
focal plane array pin
PA1300
photodiode 512 elements
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