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    PHOTODIODE 256 ELEMENTS Search Results

    PHOTODIODE 256 ELEMENTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SN54265J/B Rochester Electronics LLC SN54265 - Quad Complimentary-Output Elements Visit Rochester Electronics LLC Buy
    54AC251/VFA-R Rochester Electronics LLC 54AC251 - Multiplexer 1-Element Cmos 3-ST 8-IN - Dual marked (5962R8769201VFA) Visit Rochester Electronics LLC Buy
    54AC257/QEA Rochester Electronics LLC 54AC257 - Multiplexer 1-Element Cmos 3-ST 8-IN - Dual marked (5962-8870301EA) Visit Rochester Electronics LLC Buy
    54AC251/QFA Rochester Electronics LLC 54AC251 - Multiplexer 1-Element Cmos 3-ST 8-IN - Dual marked (5962 8769201FA) Visit Rochester Electronics LLC Buy
    54F534/B2A Rochester Electronics 54F534/B2A - Flip Flop D-Type Positive Edge 1 Element 5V Dual marked M38510/34106B2A Visit Rochester Electronics Buy

    PHOTODIODE 256 ELEMENTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


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    PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01

    S8865-256G

    Abstract: No abstract text available
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


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    PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01

    photodiode 256 elements

    Abstract: PHOTODIODE 4 CHANNEL ARRAY 74HC32 S8865-256G S8865-256 KMPDC0222EA
    Text: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed


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    PDF S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01 photodiode 256 elements PHOTODIODE 4 CHANNEL ARRAY 74HC32 KMPDC0222EA

    photodiode InGaAs NEP

    Abstract: No abstract text available
    Text: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A


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    PDF MXA-256-X MXA-256-X photodiode InGaAs NEP

    opto 2561

    Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


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    PDF MXA-256-1, MXA-256-X opto 2561 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP

    InGaas PIN photodiode, 1550 NEP

    Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


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    PDF MXA-256-1, MXA-256-X InGaas PIN photodiode, 1550 NEP PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array

    256CH

    Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
    Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 Photodiode array combined with signal processing IC The S8865-64/-128/-256 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit,


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    PDF S8865-64/-128/-256 S8865-64/-128/-256 C9118 S8865-256. SE-171 KMPD1071E02 256CH 9 ELEMENT photoDIODE ARRAY simple Photodiode

    R800-10-012-20-001

    Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
    Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,


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    PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 SE-171 KMPD1071E04 R800-10-012-20-001 S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 S8865-128 S8865-256

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,


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    PDF S8865-64/-128/-256 S8866-64-02/-128-02 C9118 SE-171 KMPD1071E03

    7404 not gate

    Abstract: lm 7404 LM 7408 RL2048dag 7408 12V lm 7404 and pin configuration rl1024dag-111 RETICON RL 1024 rl1024dag 7408 ttl family
    Text: Introduction D Series PerkinElmer's D Series image sensors 256, 512, 1024, 2048 Elements Photodiode Array are high-speed, self-scanned, chargecoupled photodiode CCPD arrays. The EVERYTHING IN A D Series Family, consisting of the NEW Standard and Wide Aperture image


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    PDF RL0256DAG-111 RL0512DAG-111 RL1024DAG-111 RL2048DAG-111 RL0256DKQ-111 RL0512DKQ-111 RL1024DKQ-111 RL2048DKQ-111 775-OPTO 7404 not gate lm 7404 LM 7408 RL2048dag 7408 12V lm 7404 and pin configuration rl1024dag-111 RETICON RL 1024 rl1024dag 7408 ttl family

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be


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    PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 KMPD1071E08

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be


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    PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 provid33- SE-171 KMPD1071E07

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process


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    PDF S11865-64/-128/-256 S11866-64-02/-128-02 S11865/S11866 S8865/S8866 B1201, KMPD1134E04

    RETICON photodiode array 512

    Abstract: RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
    Text: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution


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    PDF sil-0703 D-65199 DSP-106 10/2001W RETICON photodiode array 512 RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon

    epitaxx

    Abstract: No abstract text available
    Text: EPITAXX INC 33b04Qb S 4E D EPITAXX DOODGT? M ETX 30 & 100MLA 64,128 & 256 T-m - ss InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;


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    PDF 33b04Qb 100MLA 30MLA 30x30 100x30 epitaxx

    InGaAs Epitaxx linear

    Abstract: D000G1 EPITAXX silicon photodiode array linear array photodiode element photodiode 256 elements silicon
    Text: EP I T A X X INC 3 3 b 0 4 Qb OO OO CH ? 54E D EPITAXX M ETX30 & 100MLA 64,128 & 256 T M I-s s InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;


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    PDF 33b04Qb 100MLA 30MLA 30x30 100x30 05x025 025X05 InGaAs Epitaxx linear D000G1 EPITAXX silicon photodiode array linear array photodiode element photodiode 256 elements silicon

    RETICON 128 application notes

    Abstract: No abstract text available
    Text: K Series JLeGsB RET1CON Wide Aperture Linear Photodiode Array W Introduction The EG&G Reticon K Series linear photodiode arrays are designed for applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or


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    PDF RL0128K RL0256K RC0100LNB-011/RC0104LNN-011 RC0100LNB-011/RC0105LNN-011 RC0100LNB-011/RC0106LNN-011 3D3D73Ã RETICON 128 application notes

    RL1024KAQ011

    Abstract: RL0256
    Text: K Series J}^EBnG RETICON Wide Aperture Linear Photodiode Array Introduction The EG&G Relicon K Series linear photodiode arrays are designed tor applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or


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    PDF RL0128K RL0256K RC0100LNB-011/RC0104LNN-011 RC0100LNB-011/RC0105LNN-011 RC0100LNB-011/RC0106LNN-011 RL1024KAQ011 RL0256

    InGaAs photodiode

    Abstract: LA512 linear array 50 pitch
    Text: ETX 100MLA256 ETX 500MLA256 ETX 100MLA512 EFiTÂXX ETX“ °"“ 2“ Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 512 elements on 50 |im pitch ■ 30 im x 100 |jm or 25 |im x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm


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    PDF 100MLA256 500MLA256 100MLA512 33hD4Db InGaAs photodiode LA512 linear array 50 pitch

    RETICON ccd

    Abstract: No abstract text available
    Text: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli­ cations. This product family provides unparalleled performance


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    PDF 2048-Element 2048-elements, RL0256PAQ-011 RL0512PAQ-011 RL1024PAQ-011 RL2048PAQ-011 RETICON ccd

    RL0256

    Abstract: No abstract text available
    Text: J VL V T Series Solid State Line Scanners e g &g r e t ic o n 64,128, 256, and 512 Elements General Description The Reticon T series is a family of monolithic self-scanning linear photodiode arrays optimized for application in spectroscopy. The devices in this series consist of a row of silicon photodiodes,


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    PDF LNN-O2O/RCI001 LNN-011 RC1000LNN-020/RC1001 RC1OOOLNN-O2O/RCI001 RL0256

    RL0256

    Abstract: RETICON 1024s
    Text: n J L S Series E G r G R E T IC O N io a S o lid stateL in e Scanners 128, 256, 512, and 1024 Elements General Description The Reticon S series is a family of monolithic self-scanning linear photodiode arrays optimized for application in spectros­ copy. The devices in this series consist of a row of silicon


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    PDF RL1024S RL0128S RL0256 RETICON 1024s

    Photodiode Array linear

    Abstract: photodiode linear array Photodiode-Array photodiode 256 elements linear array photodiode element 16 Photodiode-Array InGaAs photodiode InGaAs Epitaxx linear photodiode 512 elements
    Text: EPI I M ETX 10 0 M L A 2 5 6 ETX 5 0 0 M L A 2 5 6 ETX 100IM LA512 Ü Ü : Multiplexed Linear InGaAs Photodiode Array Features • Linear 256 and 5 12 elements on 50 jam pitch ■ 30 im x 100 |jm or 25 (am x 500 jam pixels ■ Near Infrared response from 800 to ! 700 nm


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    PDF 100MLA256 500MLA256 100MLA512 0DG02Ã Photodiode Array linear photodiode linear array Photodiode-Array photodiode 256 elements linear array photodiode element 16 Photodiode-Array InGaAs photodiode InGaAs Epitaxx linear photodiode 512 elements

    InGaAs photodiode

    Abstract: photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements
    Text: J k EGgG JUDSON Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elements configured in a linear orientation with standard array lengths in excess of one inch.


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    PDF 50sec 3030b05 InGaAs photodiode photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements