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    PHOTO TRANSISTOR 940NM Search Results

    PHOTO TRANSISTOR 940NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PHOTO TRANSISTOR 940NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHOTO TRANSISTOR 940nm

    Abstract: PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor
    Text: PHOTO TRANSISTOR 光 電 晶 體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters inches ; 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire MATERIALS


    Original     		PDF TN2469TK 008inch) 260for 940nm PHOTO TRANSISTOR 940nm PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor

    Untitled

    Abstract: No abstract text available
    Text: OST-5L6 PHOTO TRANSISTOR • General Description The OST-5L6 is high sensitivity NPN silicon photo-transistor mounted in a clear plastic package. With lensed package, this phototransistor permits narrow angular response. ■ Features ˙Compact ˙Narrow angular response


    Original     		PDF 200Hrs TR940nm

    OST-9N15

    Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
    Text: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors


    Original     		PDF OST-9N15 OST-9N15 100uA 72hrs. 24hrs) 45min 30min) color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT Subminiature Photo Interrupter KDG-104 Features - Digital Output : Directly connect to a microcomputer digital port. - Hysteresis : Stable against chattering of the object. - High speed response : Faster than transistor output type. Specificatons


    Original     		PDF KDG-104 940nm)

    photo transistor array

    Abstract: PHOTO TRANSISTOR
    Text: OST-1CL7 PHOTO TRANSISTOR The OST-1CL7 is a high-A30sensitivity NPN silicon phototransistor DIMENSIONS Unit:mm mounted in 3ø ceramic package.The small size and low-cost make it highly suitable for use in detector array and for both private and industrial uses.


    Original     		PDF high-A30sensitivity 940nm photo transistor array PHOTO TRANSISTOR

    IR PHOTO DIODE

    Abstract: PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2
    Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode


    Original     		PDF NJL5165K-H1 NJL5165K-H2 940nm) 900nm) 850nm) NJL1104B NJL1120B NJL1121B NJL1121B-S NJL1127L IR PHOTO DIODE PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2

    PHOTO TRANSISTOR 940nm

    Abstract: IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR
    Text: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode


    Original     		PDF NJL5165K-H1 NJL5165K-H2 940nm) 900nm) NJL1104B NJL1120B NJL1121B NJL1121B-S NJL6103B NJL611B PHOTO TRANSISTOR 940nm IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR

    Untitled

    Abstract: No abstract text available
    Text: 1-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b PHOTO INTERRUPTER 光 遮 斷 器 Rev: A Date: 2005-4-19 GH-903 Series Electro-Optical Characteristics: Chip Code for parts GH-XXXXX Material Wave Length PC0202BS-93E GaAs& Silicon 940nm


    Original     		PDF GH-903 PC0202BS-93E 940nm 008inch)

    TRANSISTOR 077

    Abstract: dual infrared transistor photo transistor "photo transistor" dual infrared diode PHOTO TRANSISTOR 940nm ITR9811 ITR9811-C
    Text: EVERLIGHT ELECTRONICS CO ,LTD. Device Number:DRX-811-077 REV:1.1 Ecn: Page:1of5 MODEL NO:ITR9811-C  DIMENSIONS : 1.UNIT:mm. 2.GENERAL TOLERANCE ± 0.2mm. FOR ITR9811-C TEST PART,OUTPUT INTENSITY IS MEASURED INDIRECTLY BY MEASURING THE EMITTER CURRENT.THE PARTS ARE 6mm APART LEAD TO LEAD;SUCH AS FIG.4 .LED TEST CURRENT IS 4.0mA,


    Original     		PDF DRX-811-077 ITR9811-C ITR9811-C 22Lines) ITR9811 9811-C TRANSISTOR 077 dual infrared transistor photo transistor "photo transistor" dual infrared diode PHOTO TRANSISTOR 940nm

    PHOTO TRANSISTOR 940nm

    Abstract: "photo transistor" PHOTO TRANSISTOR ITR9811 ITR9811-B dual infrared transistor 9811-b
    Text: EVERLIGHT ELECTRONICS CO ,LTD. Device Number:DRX-811-078 REV:1.1 Ecn: Page:1of5 MODEL NO:ITR9811-B  DIMENSIONS : 1.UNIT:mm. 2.GENERAL TOLERANCE ± 0.2mm. FOR ITR9811-B TEST PART,OUTPUT INTENSITY IS MEASURED INDIRECTLY BY MEASURING THE EMITTER CURRENT.THE PARTS ARE 6mm APART LEAD TO LEAD;SUCH AS FIG.4 .LED TEST CURRENT IS 4.0mA,


    Original     		PDF DRX-811-078 ITR9811-B ITR9811-B 22Lines) ITR9811 9811-B PHOTO TRANSISTOR 940nm "photo transistor" PHOTO TRANSISTOR dual infrared transistor 9811-b

    "Photo Interrupter" Application Note

    Abstract: OSG-105LF OSG-105 photo amplifier application circuit "Photo Interrupter" automatic light control with photo diode CIRCUIT DIAGRAM Opto-Sensor reflective F10M reflective sensors Photo sensitive diode
    Text: OSG-105LF PHOTO INTERRUPTER •General Description The OSG-105 series are super miniature and thin photo reflective sensors. The emitter and the detector are arranged in the same direction to the sense the presence of an object. The emitter is a high output GaAs


    Original     		PDF OSG-105LF OSG-105 940nm "Photo Interrupter" Application Note OSG-105LF photo amplifier application circuit "Photo Interrupter" automatic light control with photo diode CIRCUIT DIAGRAM Opto-Sensor reflective F10M reflective sensors Photo sensitive diode

    sensors in vending machine

    Abstract: high sensitivity reflective photo interrupter blue light PHOTO detector Opto-Sensor reflective
    Text: OSG-107F PHOTO INTERRUPTER • General Description The OSG-107F series are super miniature and thin photo reflective sensors. The emitter and the detector are arranged in the same direction to the sense the presence of an object. The emitter is a high output Blue light emitting diode and the detector is a high-sensitivity silicon


    Original     		PDF OSG-107F OSG-107F 940nm sensors in vending machine high sensitivity reflective photo interrupter blue light PHOTO detector Opto-Sensor reflective

    "Photo Interrupter"

    Abstract: high sensitivity reflective photo interrupter reflective sensors Opto-Sensor reflective
    Text: OSG-107F3 PHOTO INTERRUPTER • General Description The OSG-107F3 series are super miniature and thin photo reflective sensors. The emitter and the detector are arranged in the same direction to the sense the presence of an object. The emitter is a high output Blue light emitting diode and the detector is a high-sensitivity silicon


    Original     		PDF OSG-107F3 OSG-107F3 940nm "Photo Interrupter" high sensitivity reflective photo interrupter reflective sensors Opto-Sensor reflective

    Untitled

    Abstract: No abstract text available
    Text:                                                                                         


    Original     		PDF PT2559B/L2/H3) 940nm)

    PT2559B

    Abstract: ICON30
    Text:                                                                                          


    Original     		PDF 840nm PT2559B) 940nm) 555mw/c PT2559B ICON30

    Untitled

    Abstract: No abstract text available
    Text:                                                                                           


    Original     		PDF 840nm PT2559B/L2) 940nm) 555mw/c

    IS09001

    Abstract: 100MS
    Text: PÆRilGHT IS 0 9 0 0 1 Q S9000 APPROVED T-1 3/4 5 mm Infrared Emitting Diode(Top) IR333/S2 Features: • • • • Package Dimensions: HIGH RADIANT INTENSITY. PEAK WAVELENGTH Xp = 940nm VIEWING ANGLE 48“. HIGH RELIABILITY. Descriptions: • EVERLIGHT's Infrared Emitting Di<)de (IR333/S2)


    OCR Scan     		PDF IS09001 QS9000 IR333/S2 940nm. IR333/S2) 100usj 100MS

    PHOTO TRANSISTOR 940nm

    Abstract: transistor h44
    Text: EV/ERJUGHT IS09001 QS9000 APPROVED General Purpose Photo Interrupter ITR8402 Features: Package Dimensions: IR: • LOW FORWARD VOLTAGE. • PEAK WAVELENGTH Xp=940nm. • HIGH RADIANT POWER AND HIGH RADIANT INTENSITY. • HIGH RELIABILITY. 14.0+0.2 • HIGH SENSITIVITY.


    OCR Scan     		PDF IS09001 QS9000 ITR8402 940nm. ITR8402 PHOTO TRANSISTOR 940nm transistor h44

    ITR8102

    Abstract: IS09001
    Text: EV ER LIG H T IS 0 9 0 0 1 QS9000 APPROVED General Purpose Photo Interrupter ITR8102 Features: Package Dimensions: IR: • LOW FORWARD VOLTAGE. • PEAK W AVELENGTH Xp=940nm. • HIGH RADIANT POW ER AND HIGH RADIANT INTENSITY. • HIGH RELIABILITY. 24.4+0.2


    OCR Scan     		PDF IS09001 QS9000 ITR8102 940nm. ITR8102

    DI-80

    Abstract: ITR9608 hp 940 printer SLOTTED OPTICAL SWITCH
    Text: EVERJUGHT IS09001 QS9000 APPROVED General Purpose Photo Interrupter ITR9608 Package Dimensions: IR: • LOW FORWARD VOLTAGE. • PEAK WAVELENGTH kp=940nm. • HIGH RADIANT POWER AND HIGH RADIANT INTENSITY. • HIGH RELIABILITY. PT: • HIGH SENSITIVITY. • FAST RESPONSE TIME.


    OCR Scan     		PDF IS09001 QS9000 ITR9608 940nm. ITR9608 DI-80 hp 940 printer SLOTTED OPTICAL SWITCH

    ITR8010

    Abstract: No abstract text available
    Text: GVERJLIDHT IS 0 9 0 0 1 Q S9000 APPROVED General Purpose Photo Interrupter ITR8010 Features: Package Dimensions: IR: • LOW FORWARD VOLTAGE. • PEAK WAVELENGTH A,p=940nm. • HIGH RADIANT POW ER AND HIGH RADIANT INTENSITY. • HIGH RELIABILITY. -4 1+ PT:


    OCR Scan     		PDF IS09001 QS9000 ITR8010 940nm. ITR8010

    infrared photo reflector

    Abstract: photo Receiver module NJL5I65K-HI NJh32 NJL722B PHOTO TRANSISTOR 940nm NJL512ID NJL5166K NJL6145L NJL7260E
    Text: C¿ r c 3 1. t e m p o r a r y o r d is c o n t in o e p r o d u c t t a b l e Temporary Product ITEM Photo Detector PIN Photo Diode Photo D etector (Photo T ransistor) P hoto R eflector 2. T Y PE N JL6145L N JL7260E N JL 5I4IE A N J L5I46EA A LTER N A TIV E A R T IC L E


    OCR Scan     		PDF NJL6145L NJL7260E NJL5I65K L5I46EA NJL5166K 940nm) NJL1I12B NJLU20F 900nm) NJLII22B infrared photo reflector photo Receiver module NJL5I65K-HI NJh32 NJL722B PHOTO TRANSISTOR 940nm NJL512ID NJL5166K NJL6145L NJL7260E

    PNPN

    Abstract: OCS32 photo sensor pin diagram PHOTO SENSOR of application 357 photo
    Text: OKI electronic com ponents OCS32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input


    OCR Scan     		PDF OCS32_ OCS32 OCS32 2424D b72M2M0 PNPN photo sensor pin diagram PHOTO SENSOR of application 357 photo

    CR10YG

    Abstract: STETTNER CR10R diode j4d CR10G CR10S stetco cr10d CR10-YG CR10-R
    Text: STETCO INC CHE D CHIP LEDS I • f l t .51425 OODSflaS a iEE I » ELECTRONIC COMPONENTS S TETTISI E R • S T A N D A R D t - h i - h T - ty - W Epoxy-bubble Metallized contact areas LED ON A CERAMIC SUBSTRATE . MAY BE ATTACHED BY AL1 CUSTOMARY TECHNIQUES:


    OCR Scan     		PDF