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    PHO SIGNAL SENSOR Search Results

    PHO SIGNAL SENSOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS581P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SD-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS791B Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SK-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    PHO SIGNAL SENSOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mammography

    Abstract: scintillator amplifier charge amplifier array scintillator C7930-01 lvds CSI converter image sensor x-ray pho signal sensor CSI lvds
    Text: Preliminary 2003. Feb, I50004 C7930-01 Flat Panel Sensor Ver. 1.3 Feb. 2003 Features * Fine Mode 50 micron and 2x2 Binning Mode 100micron pixel pith * 4416 x 3520 pixels at 50micron pitch with seamless construction * High frame rate : 7 frame / sec at 100micron pitch


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    PDF I50004 C7930-01 100micron 50micron C7930-01 4416x3520 176x220 KSP-0002 mammography scintillator amplifier charge amplifier array scintillator lvds CSI converter image sensor x-ray pho signal sensor CSI lvds

    led phototransistor pair

    Abstract: toco Phototransistor til 81
    Text: î] E2P0007-27-31 PHO TOCO UPLERS PRO DU CT OVERVIEW PHOTOCOUPLERS APPLICATION NOTES 1. GENERAL DESCRIPTIO N B y coupling a light emitting element and a light sensing element, a single-function element: can be created. The functional element thus produced is called a photocoupler, photointerrupter or sensor


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    PDF E2P0007-27-31 OCM22Q led phototransistor pair toco Phototransistor til 81

    ivo ne 202

    Abstract: P535H IVO GmbH ivo irion Iskra relay BP 40 Diagramm R T F1200U IVO GmbH incremental encoder LEUZE ivo 202
    Text: IVO IRION & VOSSELER COUNTERS • CO NTRO L UNITS • ENCODERS Operating Instructions Tachometer TA 202 Contents Page 1 Safety remarks 2 2 Getting to know the TA 202 3 2.1 Block diagramm of the TA 202 3 Connecting the TA 202 4 4 Connecting the supply voltage


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    142D

    Abstract: tcd storage gate ccd TCD142D
    Text: 2. P r in c i p l e o f C C D L in e a r I m a g e S e n s o r T he CCD Im age Sensor consists o f th ree m ain regions; P h o to Sensitive R egion, T rans­ fer R egion, an d O u tp u t C ircuit R egion. Fig. 2-1 show s the C o n stru ctio n o f the CCD image sensor.


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    Untitled

    Abstract: No abstract text available
    Text: WhoI HEW LETT mLTM PACKARD Optical Reflective Sensors Technical Data HBCC-1570 HBCC-1580 HBCC-1590 Description T he HBCC-15XX series sen so rs • Focused Emitter and are fully in te g rate d m odules Detector in a Single designed for ap plications req u ir­


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    PDF HBCC-1570 HBCC-1580 HBCC-1590 HBCC-15XX HBCC-1570, HBCC-1580, HBCC-1590,

    178308-G

    Abstract: No abstract text available
    Text: Wire to Board Connectors AMP Dynamic Series Connectors/ D-3000 Series Catalog 65224 Revised 11-93 Features Contents printed on recycled paper. For draw ings, technical data or sam ples, contact yo ur AM P sales engineer or call the AM P Product Information Center 1-800-522-6752.


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    PDF D-3000 178308-G

    pyroelectric infrared sensor krx11

    Abstract: KRX11 WORKING PRINCIPLE IR SENSOR philips pyroelectric infrared sensor 9502X transistors 6822 passive Infrared-Sensor philips krx11 pyroelectric infrared sensor passive Infrared Sensor INFRARED SENSOR LD 15
    Text: Philips Components krxh _ y \_ Supersedes October 1987 data DUAL ELEMENT PYROELECTRIC INFRARED SENSOR Special features: Enhanced IR sensitivity W ide fie ld o f view Pick and place com patible A p p lic a tio n :


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    PDF M89-1509/CC pyroelectric infrared sensor krx11 KRX11 WORKING PRINCIPLE IR SENSOR philips pyroelectric infrared sensor 9502X transistors 6822 passive Infrared-Sensor philips krx11 pyroelectric infrared sensor passive Infrared Sensor INFRARED SENSOR LD 15

    photodiode application luxmeter

    Abstract: IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter
    Text: Application Circuit Examples Low noise light-sensitive preamplifier -M 5 V Used in receivers for spatial light transm ission and optical rem ote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.


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    PDF AD549, AD757, PA620 LF357, LF356, LH0032, LF442, HA2625 A3130 photodiode application luxmeter IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter

    65C816

    Abstract: serial port 8251 8251 serial port SERIAL CONTROLLER 8251 8251 timer 8251 DMA controller B13D2 Applications of 8251 gmpx SRAM 6114
    Text: Ordering number: EN & 5042 CMOS LSI LC8214 Facsimile Controller Prelim inary Overview Package Dimensions The LC8214 is a facsimile controller comprising a CPU, CPU peripheral circuits, image processor, dot change detector for image data compression and expansion, ther­


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    PDF LC8214 LC8214 600bps LC8920, LC89201) LC8921) 16-bit 65C816) 64-gradation 65C816 serial port 8251 8251 serial port SERIAL CONTROLLER 8251 8251 timer 8251 DMA controller B13D2 Applications of 8251 gmpx SRAM 6114

    st s3931

    Abstract: 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp
    Text: H AM A M A TSU THERM O ELECTRIC ALLY-CO OLED TECHNICAL DATA N-MOS LINEAR IMAGE SENSORS S5930, S5931 SERIES A built-in therm oelectric cooler enables highly stable m easurem ents even at very-low -light level FEATURES • Wide photosensitive area Pixel pitch: 50 n m S5930 Series , 25/* m (S5931 Series)


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    PDF S5930, S5931 S5930 Telephone306 D-82211 33-CK9 st s3931 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp

    LDR07

    Abstract: 3TA06-600CW triac BTA 80 TRIAC FT 12 sensor LDR DE 10M TRIAC BTA 16 BTA06-600 TRIAC BTa 12 600 Sensor Ping Triac ph 66
    Text: SGS-TtiOMSON UAA4713 m MOTION DETECTOR INTERFACE A D V A N C E D ATA 0/ 60 Hz AC SUPPLY vIPUT FOR PYR O ELECTRICAL SENSOR nIPUT FOR PHO TO RESISTIVE SENSOR ENSOR FILTER AM PLIFIER ROGRAM M ABLE ON-TIM ER RIAC O U TPUT AND RELAY OUTPUT HORT C IRCUIT PROTECTION


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    PDF UAA4713 UAA4713 DIP-14IO AA4713DR AA4713FP BTA06-600 BTA08-400 X10FL EI00S LDR07 3TA06-600CW triac BTA 80 TRIAC FT 12 sensor LDR DE 10M TRIAC BTA 16 BTA06-600 TRIAC BTa 12 600 Sensor Ping Triac ph 66

    2SC945 Q equivalent

    Abstract: No abstract text available
    Text: DATA SHEET NEC j f MOS INTEGRATED CIR CU IT juPD35H71 A 500 0 -B IT CCD LINEAR IMAGE SENSOR The /UPD35H71A is a high sensitivity 50 0 0 -b it linear image sensor consisting o f charge coupled devices CCD w hich changes optical images to electrical signal.


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    PDF juPD35H71 /UPD35H71A juPD35H71A 5000-bit I-1207) //PD35H71 2SC945 Q equivalent

    BG38

    Abstract: CCD191
    Text: LORAL Fairchild Im aging Sensors CCD191 6000 Element Linear Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 6000 x 1 photosite array 10/im x 10/im photosites on 10/im pitch Anti-blooming and integration control Enhanced spectral response particularly


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    PDF CCD191 10/im 000134D BG38

    gj series hall effect

    Abstract: fiber-optic sensor 820nm gj hall effect NES211 820nM 850nm photodiode Fiber-optic EE-25 transformer fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm NE5211D
    Text: N E /S A 5 2 1 1 S ig n e t ic s Transimpedance Amplifier 180MHz Prelim inary Specification Linear Products DESCRIPTION The NE/SA5211 is a 2 8 k ii transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic


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    PDF NE/SA5211 28kii NE/SA5211 180MHz) 180MHz 10jiF 50Mb/s BPF31, 850nm gj series hall effect fiber-optic sensor 820nm gj hall effect NES211 820nM 850nm photodiode Fiber-optic EE-25 transformer fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm NE5211D

    NE5514

    Abstract: st uA741 application
    Text: Signetics AN1441 Applications for the NE5514 Application Note Linear Products NE5514 DESCRIPTION T he S E /N E 5 5 1 4 fam ily o f Q uad O perational A m plifiers sets new standards in Bipolar Quad A m plifier Perform ance. T he am plifiers feature low input bias curre nt and low offs e t


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    PDF AN1441 NE5514 NE5514 /uA741 st uA741 application

    MN3671

    Abstract: No abstract text available
    Text: Panasonic CCD Linear Image Sensor MN3671 RE Color CCD Linear Image Sensor with 1024 Pixels for R and B Colors/2048 Pixels for G Color • O ve rv iew iPin Assignments The MN3671 RE is a high responsivity CCD color linear image sensor with 1024 pixels each for R and B and 2048 G pixels,


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    PDF MN3671 Colors/2048 200dpi. resolut----219 MN3671RE

    TRIAC BTa 12 600

    Abstract: triac BTA 140 triac BTA 80 BTA 51 triac TRIAC BTA 08 600 D TRIAC BTA 06 400 TRIAC BTA 36 LDR07 TRIAC BTa 10 600 B
    Text: r z j SGS-TtiOMSON UAA4713 MOTION DETECTOR INTERFACE A D V A N C E DATA • ■ . ■ ■ ■ ■ ■ ■ 5 0 /6 0 Hz AC SUPPLY INPUT FOR PYR O ELECTRICAL SENSOR INPUT FOR PHO TO RESISTIVE SENSOR SENSOR FILTER AM PLIFIER PR O G RAM M ABLE ON-TIM ER TRIAC O U TPUT AND RELAY OUTPUT


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    PDF UAA4713 DIP-14 SO-14 UAA4713DP UAA4713FP UAA4713 X10FL EI00S LDR07 100nF/35V TRIAC BTa 12 600 triac BTA 140 triac BTA 80 BTA 51 triac TRIAC BTA 08 600 D TRIAC BTA 06 400 TRIAC BTA 36 LDR07 TRIAC BTa 10 600 B

    magnatec mosfets

    Abstract: No abstract text available
    Text: Semeiab Group Operating Divisions Semeiab - four core divisions - Power, Military-Aerospace, RF and Opto Diamond Enhanced MOSFETs Semeiab is the world's first manufacturer to offer diamond enhanced heatsinks for power MOSFETs, using a unique patented process. This


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    7811A

    Abstract: pms 1-7-7 HS -153-SP-J TH7811ACC CCD circuit
    Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH 7811A LINEAR CCD* IMAGE SENSOR 1728 PIXELS WITH ANTIBLOOMING V* •tw V» Vat DNC DNC DNC •» • Pixel size : 13 im x 13 nm (13 nm pitch ■ Simple operation : - two drive clocks • Internal sample-and-hokj available


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    PDF 24-pin DSTH7B11A/0192 7811A pms 1-7-7 HS -153-SP-J TH7811ACC CCD circuit

    mos 4069

    Abstract: 4069 CMOS 4069 NOT GATE IC
    Text: CURRENT OUTPUT TYPE MOS LINEAR IMAGE SENSORS S3901, S3904 SERIES HAMAMATSU TECHNICAL DATA Wide Sensitive Area 2.5mm Pixel Height , High UV Sensitivity, Excellent Photometric Capabilities, Low Power Consum ption FEATURES • Wide photosensitive area Pixel pitch : 50|am (S3901), 25nm (S3904)


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    PDF S3901, S3904 S3901) S3904) S3901 mos 4069 4069 CMOS 4069 NOT GATE IC

    lN336

    Abstract: ULN-3330T 3330t ULN3330T 3330-T ULN3330TA
    Text: .3 330 , 3360 , 3363 O P T O E L E C T R O N IC SW ITCHES The ULN3330T/TA, ULN3360T, and ULN3363T optoelectronic sw itches provide light detection and low-level signal processing in single three-lead packages. The m onolithic integrated circuits, requiring


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    PDF ULN3330T/TA, ULN3360T, ULN3363T ULN3330T/TA ULN3360T lN336 ULN-3330T 3330t ULN3330T 3330-T ULN3330TA

    L0C110

    Abstract: No abstract text available
    Text: LINEAR OPTOCOUPLERS L0C110/LOC111/L0C112 DESCRIPTION T h e L O C 1 1 0 , LOC111 a n d LO C 1 1 2 a re lin e a r optocouplers for use in telecom, medical and power supply isolation circuits. These devices are available in 8 pin DIP, surface m ount or flatpack packages.


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    PDF L0C110/LOC111/L0C112 LOC111 200kHz) Voltage/Cu11 /LOC111/LOC112 LOC110/LOC111/LOC112 1-800-CPCLARE L0C110

    LI-10B

    Abstract: No abstract text available
    Text: LZ23362 SHARP Two-power supply + 5 V and + 1 2 V operation 1 / 3 type B /W CCD Area Sensor for EIA LZ23362 is a 1/3 -ty p e (6.0 mm) solid-state image sensor th a t co n s is ts o f PN p h o te -d io d e s and CCDs (charge-coupled devices) driven by only


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    PDF LZ23362 16-PIN LZ23362 LI-10B

    Untitled

    Abstract: No abstract text available
    Text: Application Note: Anti-Blooming and Integration Control Fairchild Imaging Sansors by D. Debs oversaturated photosites from smearing into adjacent areas with consequent loss of resolution. Antiblooming alone has no effect on the performance responsivity, etc.' of nonsaturated photosites.


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    PDF BG-38