Ferrite Rod Antennas for RF-identification Transponders
Abstract: philips 3C85 ferrite material philips ferrite 4b1 ferrite material 3c85 ferrite rod ANTENNA philips 4b1 ferrite rod philips ferrite core 4b1 ferrite 4b1 ferrite rod rod 4B1
Text: Application Note Philips Magnetic Products Ferrite Rod Antennas for RF-identification Transponders 0011001010100111010101001110110110 Philips Components Ferrite Rod Antennas for RF-identification Transponders Contents Introduction 2 System configuration 3
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4330 030 50
Abstract: 4330 030 3629 4330 030 BDS3 PHILIPS 464s2 philips tube ferrite philips ferrite bead
Text: Philips Components Magnetic Products SMD Beads SMD Beads PHILIPS COMPONENTS ferrite beads are well known components to suppress unwanted interference. These are supplied as suppression beads to shift on a wire and as beads-on-wire for through-hole mounting on a PCB.
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MWW001
MWW002
MWW003
4330 030 50
4330 030 3629
4330 030
BDS3 PHILIPS
464s2
philips tube ferrite
philips ferrite bead
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4330 030
Abstract: choke transformer philips 4330
Text: Philips Components Magnetic Products SMD Common Mode Chokes SMD Common Mode Chokes OPERATING PRINCIPLE Interferences propagating via supply or signal lines can be suppressed by placing a high impedance in series. This can be provided by a ferrite inductor. However, saturation by the supply current can be a problem. Remedies are a low
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CMS4-11/3/4
MWW004
MWW005
4330 030
choke transformer
philips 4330
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philips ferrite 4b1
Abstract: philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead
Text: Philips Components Magnetic Products SMD Wide Band Chokes SMD Wide Band Chokes SMD wide-band chokes are an alternative to a SMD bead when more impedance or damping is required. The design of this product is based on our well known range of through-hole wide-band chokes. In these products the conductor wire is
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MWW006
MWW007
8/10-3B1
MWW008
8/10-4B1
philips ferrite 4b1
philips ferrite core 4b1
ferrit* 3b1
philips 4330
Wideband Chokes
103B1
philips ferrite 4b1 current
philips 4b1 ferrite
philips ferrite bead
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
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FERROXCUBE 4330
Abstract: 4330 030 222203037479 transistor marking pl BGY241 PHILIPS 4330 030 36300
Text: P hilips S em ico n d uctors O b jective sp ecification UHF amplifier module BGY241 FEA TUR ES P IN N IN G - SO T482B • 3.5 V nom inal supply voltage PIN D E S C R IP T IO N •3 5 dB m output pow er 1 RF input • E asy output pow er control by DC voltage.
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BGY241
BGY241
OT482B
OT482B
FERROXCUBE 4330
4330 030
222203037479
transistor marking pl
PHILIPS 4330 030 36300
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BGY916
Abstract: FERROXCUBE 4330
Text: Philips Semiconductors Product specification UHF amplifier module BGY916 FEATURES PINNING - SOT365 • 26 V nominal supply voltage PIN • 16 W output power into a load of 50 Cl with an RF drive power of 25 mW. APPLICATIONS • Base station transmitting equipment operating in the
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BGY916
BGY916
OT365
OT365
FERROXCUBE 4330
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cd 2003 gp
Abstract: 2322 195 4330 ferroxcube cd 4074 B
Text: Philips Semiconductors Product specification UHF amplifier module BGY916/5 PINNING SOT365A FEATURES • 26 V nominal supply voltage PIN DESCRIPTION • 5 V nominal bias voltage 1 RF input • 16 W output power into a load of 50 D. with an RF drive power of 25 mW.
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BGY916/5
OT365A
MSA447
OT365A
cd 2003 gp
2322 195
4330 ferroxcube
cd 4074 B
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ci cd 4074
Abstract: BGY916/S FERROXCUBE 4330
Text: Philips Semiconductors Product specification UHF amplifier module BGY916/5 FEATURES PINNING SOT365 • 26 V nominal supply voltage PIN DESCRIPTION • 5 V nominal bias voltage 1 RF input • 16 W output power into a load of 50 Cl with an RF drive power of 25 mW.
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BGY916/5
BGY916/5
OT365
OT365
ci cd 4074
BGY916/S
FERROXCUBE 4330
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Amplifier Modules
Abstract: DA-157
Text: Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B FEATURES PINNING - SOT388B • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage 2 VC • Very high efficiency typ. 55%
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BGY122A
BGY122B
OT388B
BGY122A;
BGY122B
OT388B.
Amplifier Modules
DA-157
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BGY114D
Abstract: BGY114E UBD373
Text: Product specification Philips Semiconductors UHF amplifier modules BGY114D; BGY114E FEATURES DESCRIPTION • 12.5 V nominal supply voltage The BGY114D and BGY114E are five-stage UHF amplifier modules. • 6 W output power Each module consists of 5 NPN silicon Planartransistor
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BGY114D;
BGY114E
OT278A
BGY114D
BGY114E
MSA391
7110fiEb
D074223
UBD373
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4330 030 36 ferroxcube
Abstract: BGY925 FERROXCUBE 4330 MM 4054
Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY925 FEATURES PINNING - SOT365 • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Cl with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the
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BGY925
BGY925
OT365
16reliminary
OT365
4330 030 36 ferroxcube
FERROXCUBE 4330
MM 4054
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Q with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi 3 VS2
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BGY925
OT365A
BGY925
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BGY925
Abstract: No abstract text available
Text: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 £1 with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the
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BGY925
BGY925
OT365A
OT365A
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UHF amplifier module
Abstract: BGY119A BGY119B
Text: Philips Semiconductors Product specification UHF amplifier modules BGY119A; BGY119B FEATURES PINNING - SOT359A • Single 4.8 V nominal supply voltage PIN • 1.2 W output power DESCRIPTION 1 RF input • Easy control of output power by DC voltage 2 Vc • Very high efficiency typ. 55 %
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BGY119A;
BGY119B
BGY119A
BGY119B
OT359A
MLB740
OT359A.
711002b
UHF amplifier module
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DC/DC R-785
Abstract: pn 2222 - b2b BGY21 transistor tt 2222 TT 2222 npn 171C BGY210 DCS1800
Text: Preliminary specification Philips Semiconductors UHF amplifier module BGY210 P IN N IN G -S O T321B FEATURES • 6 V nominal supply voltage PIN DESCRIPTION • 2 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs 4 RF output
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DCS1800
BGY210
OT321B
BGY210
PINNING-SOT321B
MSA489
MLB740
711002b
OT321B.
DC/DC R-785
pn 2222 - b2b
BGY21
transistor tt 2222
TT 2222 npn
171C
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c38 transistor
Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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D0b31t
BLV948
OT262A2
MRC117
2x100
c38 transistor
PHILIPS 4330 030 36300
transistor tt 2222
c39 transistor
L33 TRANSISTOR
TT 2222 npn
4330 030 36 ferroxcube
FERROXCUBE 4330
b3171
transistor c37
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MSA486
Abstract: uhf 3W amplifier BGY206 0104220
Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS
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BGY206
OT388A
BGY206
OT388A
MSA486
MLB740
OT388A.
7110fl2l>
MSA486
uhf 3W amplifier
0104220
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transistor tt 2222
Abstract: itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor ITT 2222 A ITT rt.b
Text: Philips Semiconductors bbSBTBl DDSTEb? 7 2 fl APX Product specification BLV948 UHF push-pull power transistor «N AMER P H I L I P S / D I S C R E T E FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
OT262A2
PINNING-SOT262A2
2X100
15K/W;
15K/W
transistor tt 2222
itt 2222
TT 2222 npn
MRC113
MRC114
2222-581
TT 2222
bc32 transistor
ITT 2222 A
ITT rt.b
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BGY205
Abstract: 4330 030 36 ferroxcube
Text: Product specification P hilips Sem iconductors UHF amplifier module BGY205 PINNING -SOT321B FEATURES • 6 V nominal supply voltage DESCRIPTION PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output
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BGY205
BGY205
OT321B
-SOT321B
MLB740
OT321B.
G103S3Ã
4330 030 36 ferroxcube
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PHILIPS 4330 030 36300
Abstract: 4330 030 t388a t388a, 14 pin
Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs APPLICATIONS
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BGY206
OT388A
BGY206
T388A
PHILIPS 4330 030 36300
4330 030
t388a, 14 pin
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Untitled
Abstract: No abstract text available
Text: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain
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BLV945A
MRC106
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Untitled
Abstract: No abstract text available
Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA
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b53T31
BLT80
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BGY112B
Abstract: SOT288C PHILIPS 4330 030 36300 vHF amplifier module BGY112A BGY112C FERROXCUBE 4330 4330 ferroxcube
Text: Philips Semiconductors Objective specification VHF amplifier modules BGY112A; BGY112B; BGY112C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY112A, BGY112B and BGY112C are three-stage VHF power amplifier modules. • 6 W output power Each module consists of three NPN silicon planar
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BGY112A;
BGY112B;
BGY112C
BGY112A,
BGY112B
BGY112C
OT288C
MSB042
7110A2b
SOT288C
PHILIPS 4330 030 36300
vHF amplifier module
BGY112A
FERROXCUBE 4330
4330 ferroxcube
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