Untitled
Abstract: No abstract text available
Text: f Z J ^7# S C S -T H O M S O N M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PREDICTED WORST CASE BATTERY LIFE OF
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MK48Z18/19
MK48Z08/18/09/19
MK48Z08
MK48Z08
PHDIP28
100ns
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MK48Z30
Abstract: No abstract text available
Text: S5E D • 7 ^ 2 3 7 003fl3flb T13 ■ SGS-THOMSON SGTH T - ^ - 2 L 3 “ / J MK48Z3Ö MK48Z30Y S G S- THOMSON CMOS 32K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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003fl3flb
MK48Z3Ã
MK48Z30Y
MK48Z30
MK48Z30Y
MK48Z30/30Y
71E1E37
MK48Z30,
T-46-23-13
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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MKI48Z18
MKI48Z18
PHDIP28
100ns
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Untitled
Abstract: No abstract text available
Text: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY
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MKI48Z18
PHDIP28
T-46-23-12
100ns
----------------------------SCS-mOMSON904
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MK48Z08 equivalent
Abstract: MK48Z09 MK48Z08 MK48Z18 PHDIP thomson tv circuit diagram
Text: 52E S G » • □□3Ô37G S - T H O M S O « e r a bSb ■ S G T H T - V ^ - 2 3 - |2_ N M K 4 8 Z 0 8 .1 8 « M K 4 8 Z 0 9 ,1 9 S G S - TH OH SO N CMOS 8K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT
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MK48Z08
MK48Z09
-MK48Z08/09-
MK48Z18/19
MK48Z08/18/09/19
vr000825
MK48Z08
PHDIP28
71E1E3?
MK48Z08 equivalent
MK48Z18
PHDIP
thomson tv circuit diagram
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MK48T08
Abstract: MK48T18 tle 8760 mk48T08b10
Text: r z j S C S -T H O M S O N ^7# iSD ^@ILŒCTl@iD gi MK48T08 MK48T18 CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,
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MK48T08
MK48T18
MK48T18
PHDIP28
MK48T08/18
K48T08,
tle 8760
mk48T08b10
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Untitled
Abstract: No abstract text available
Text: r z 7 SCS-THOMSON ^ 7# MK48Z32 MK48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS
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MK48Z32
MK48Z32Y
MK48Z32Y
48Z32Y
VA00607
MK48Z32/32Y.
MK48Z32/32Y
K48Z32,
K48Z32Y
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256x16 eprom
Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1
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ET9400
EF6801/04/05
ISB12000
ISB18000
MKI48Z18
PHDIP28
MK48Z30,
256x16 eprom
GS-2I5-D12
GS-D250M
GS-2I12-9
512X8 from 128x8 ram
L293D shield
gs-2i5
PHDIP24
ESM1602B
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8925m
Abstract: No abstract text available
Text: fZ T S G S -T H O M S O N “ 7# M K48Z32 M K48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS
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K48Z32
K48Z32Y
MK48Z32
MK48Z32Y
MK48Z32/32Y.
MK48Z32/32Y
K48Z32,
8925m
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Untitled
Abstract: No abstract text available
Text: SEE T> m 7l12c1237 DD36MD0 113 «SGTH SGS-THOMSON ¡5 MK48Z32 MK48Z32Y 6 S-THOflSON CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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7l12c
MK48Z32
MK48Z32Y
MK48Z32
MK48Z32Y
K48Z32
K48Z32Y
MK48Z32/32Y
BB8llUiCT58@
MK48Z32,
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MKI48Z18
Abstract: PHDIP
Text: ¿Z J SGS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEM PERATURE RANGE -40°C TO +85‘ C ■ INTEGRATED LOW POWER SRAM, POWERF A IL C O N T R O L C IR C U IT A N D E N E R G Y SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS W RITE-CYCLE
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MKI48Z18
MKI48Z18
PHDIP28
100ns
PHDIP
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MKI48Z18
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.
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MKI48Z18
MKI48Z18
I48Z18
PHDIP28
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stm 8322
Abstract: 48Z08 MK48Z09
Text: r z 7 S G S -T H O M S O N *> 7 M G W T O ilL I^ G M D ! M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE
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48Z08/09-4
MK48Z18/19
48Z08
K48Z18
MK48Z08/18/09/19
MK48Z08
PHDIP28
100ns
stm 8322
MK48Z09
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Untitled
Abstract: No abstract text available
Text: S2E 1> £ Z 7 ^ 7 # • 7 S 2 CÌ2 3 7 OOBflSlfl 23M ■ S 6 T H T - V £ - Z 3 - / 2 _ S G S -T H O M S O N 5 M K 4 8 T 0 8 J L i T m ® « t _ M K 4 8 T 1 8 S G S-TH0I1S0N CMOS 8K x 8 TIMEKEEPER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM,
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PHDIP28
K48T08-
MK48T18
MK48T08
PHDIR28
100ns
150ns
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MK48T18
Abstract: No abstract text available
Text: / I T ^7# S C S - T H O M S O M K48T08 M K48T18 N KsiieB®iiiLi STn3®Hoei CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,
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K48T08
K48T18
MK48T08
MK48T18
MK48T08,
MK48T18
MK48T08
PHDIP28
150ns
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Untitled
Abstract: No abstract text available
Text: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.
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MK48Z30
MK48Z30Y
MK48Z30
MK48Z30Y-4
MK48Z30/30Y.
MK48Z30/30Y
K48Z30,
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MK48T87B24
Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W
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M27C64A-15F1
M27C64A-20F1
M27C64A-25F1
M27C64A-30F1
M27C64A-20F6
M27C64A-25F6
M27C64A-30F6
ST16601
ST16F48
ST16SF48
MK48T87B24
ST24C02CB1
MK48T18B15
M48Z32Y-100PC1
M2764AF1
MK48Z02B-20
MKI48Z12B15
ST24C01CB1
MK48Z02B-25
ST24C16CM1TR
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