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    PHB80N06T Search Results

    PHB80N06T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHB80N06T
    		Philips Semiconductors TrenchMOS Transistor Standard Level FET Original PDF
    PHB80N06TT3
    		Philips Semiconductors TrenchMOS transistor Standard level FET Original PDF

    PHB80N06T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PHB80N06T

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		OT404 PHB80N06T PHB80N06T PDF

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps PDF

    TO220-SMD

    Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
    Contextual Info: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V


    Original     		BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10 PDF

    PHB80N06T

    Abstract: T404
    Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		PHB80N06T OT404 PHB80N06T T404 PDF