PG10218EJ01V0DS Search Results

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

HS350

Abstract: VP215 SW SPDT 6pin
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

SW SPDT 6pin

Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PG2012TB

Contextual Info: GaAs INTEGRATED CIRCUIT PG2012TB L-BAND SPDT SWITCH DESCRIPTION The PG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.