PG1017 Search Results

PG1017 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PG1017		Pirgo Electronics	Silicon Planar Power Transistor		Scan	PDF
PG1017		Pirgo Electronics	Silicon Planar Power Transistors		Scan	PDF

PG1017 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking g2j Abstract: HS350 VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
HS350 Abstract: VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
HS350 Abstract: VP215 Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2006TB L, S-BAND 1.8 V CONTROL VOLTAGE SPDT SWITCH DESCRIPTION The µPG2006TB is an L, S-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low	Original	PG2006TB PG2006TB HS350 VP215	PDF
HS350 Abstract: VP215 Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG187GR GaAs MMIC DBS TWIN-SPDT FOR 2 x 2 SWITCH MATRIX DESCRIPTION The µPG187GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least multi LNB are required.	Original	PG187GR PG187GR 16-pin PG187GR-E1 HS350 VP215	PDF
Untitled Abstract: No abstract text available Text: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~\| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN	OCR Scan	0007S PG1017, PG1001 PG1002 PG1003 2N4862 PG1004 PG1005 PG1006 PG1007	PDF
PG2020 Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053 Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6	OCR Scan	2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053	PDF
pg2004 Abstract: PG2011 pg2001 PG2006 Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE	OCR Scan	2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 pg2004 PG2011 pg2001 PG2006	PDF
2N4862 Abstract: PG1010 API Electronics transistor 1012 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 Text: :a "p I ELEC T R O N IC S IN C : 13 . / ,-Í3A00 75t DE~J QD43Scì2 0G0D07S 1 ^ - fa - INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN * 3 n “O n m o v P I R G O E L E C T R o n ic s iñc. ; Z ^ rJ	OCR Scan	QD43Sc 0G0D07S PG1001 PG1017, T0-46 PG1002 PG1003 2N4862 PG1004 PG1010 API Electronics transistor 1012 PG1005 PG1006	PDF