PF 4FL Search Results

handling of beam lead diodes

Abstract: DSM6363 DSM6361 Alpha Industries pin diodes
Contextual Info: ALPHA IND/ SEMICONDUCTOR 4flE P • 0565443 DDD1223 741 ■ ALP Mesa Beam-Lead PIN Diodes -r «7-i s Features ■ ■ ■ ■ ■ ■ ■ ■ ■ New Stronger "Full Frame" Design 8 Grams Typical Pull Strength Broad Product Line Low Capacitance: .025 pf Low Resistance: 1.7 ohm

Contextual Info: @ SP T SPT7760 8-BIT, 1000 MSPS FLASH A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS Digital Oscilloscopes Transient Capture Radar, EW, ECM Direct RF Down-Conversion 1:2 Demuxed ECL Compatible Outputs Wide Input Bandwidth - 900 MHz Low Input Capacitance -1 5 pF MQUAD

pm8943

Abstract: MRM24 philips hybrid amplifier modules SOT348 CR4424 CR4425 CR4427 tektronix 11803
Contextual Info: Philips Semiconductors ^ bbSB'îBl 0D33 1 7 3 bOfl M A P X Video driver hybrid amplifiers Objective specification CR4424; CR4425; CR4427 b'ìE ì> N AUER PHILIPS/DISCRETE FEATURES PINNING -S O T115 • Typical 10 to 90% transition times with CL = 8.5 pF: PIN

Contextual Info: ALPHA IN»/ SEMICONDUCTOR 4AE D • QS6S443 00Q1215 b7S W A L P High Voltage PIN Switching Diodes Features ■ ■ ■ ■ ■ ■ ■ Hard Glass Passivated Hermetic 500 to 1000 Volts Breakdown 0.1 to 2.5 pF Capacitance Low Series Resistance to .25 Ohms

74ABT04

Abstract: 74ABT 74ABT04D 74ABT04N 74ABT04PW
Contextual Info: Philips Semiconductors Product Specification Hex inverter 74ABT04 QUICK REFERENCE DATA SYMBOL LOGIC DIAGRAM CONDITIONS Tamb = 25°C; GND = 0V PARAMETER UNIT 2.2 1.6 ns 0.4 ns 3 pF 50 HA ao — — £ > °— -— to A1 — - £ > 0 - - 71 tp H L

DSG6474

Contextual Info: ALPHA INP/ SEMICONDUCTOR 4ßE D • 05ÔS443 D0D1S17 44Ö ■ Beam-Lead PIN Diodes ALP 'T V 7 -IS Features Low Capacitance, .02 pF Low Resistance, 3.0 ohms Fast Switching, 15nsec on, 25 nsec off High Voltage, 200 volts Oxide Passivated Types DSG6470 Series

panasonic capacitor HFG series

Contextual Info: 12 Watt LV Series Featu res • Universal 3.5 to 16 Volt Input Range ■ Up to 12 Watts of PCB Mounted Power ■ Efficiencies to 80% Dual Output ■ Fully Isolated, Filtered Design ■ Low Noise Outputs, < 50 mV P-P ■ Very Low I/O Capacitance, 375 pF Typical

Contextual Info: SPT772S SPT 8-BIT, 300 MSPS FLASH AID CONVERTER SIGNAL PR OC ESSIN G TECHNOLOGIES FEATURES • • • • • APPLICATIONS M etastable Errors Reduced to 1 LSB Low Input Capacitance: 10 pF W ide Input Bandwidth: 210 MHz 300 MSPS Conversion Rate Typical Power Dissipation: 2.2 W atts

Npn 310

Contextual Info: INTEX/ SENITRONICS 27E D • MfibTSma jo m iu u ii GD0 Ü5 Ö3 fi ■ 7 ^ < Z 7 - 0 / Semitronics Corp. SEMICONDUCTORS TO-92 transistors Maximum Ratings Type Packtge D iv « Hfe Min/Max VCE Sat 3 Iç/la Volts mA/mA Cch pF Mas _ _ . _ 2N3903 2N3904 2N3905

Contextual Info: in te i, 83C51 KB HIGH PERFORMANCE KEYBOARD MICROCONTROLLER Direct Drive LED Outputs — Four Pins P3.7:4 — 13 mA Typical Current Sink Capability 20 pF Cap On-chip for RC Resonator — Frequency Selectable (4-6 MHz) • 128-byte On-chip RAM Memory ■ Clock/Data Drivers to Motherboard

ma4st403

Abstract: MA4ST402 5bme
Contextual Info: M / A - CO M SEMICOND-.BRLNGTON 4flE D AfilAr-. • 5b ME 214 D D O l lT i fi ■ MIC Surface Mount TO?-l«i * SOT-23 Hyperabrupt Tuning Varactors MA4ST400 Series Features • Surface Mount Package • High Quality Factor • Capacitance Ratio to 9.5:1

IL100

Abstract: IL101 E91231 L100
Contextual Info: isocon inc 75 DE|4flflbSlD DODDDfil Q | u . - IL 10 5 IL101 HjghSpeed Opto Isolators FEATURES • • • • • ABSOLUTE M A X IM U M RATINGS (25°C unless otherwise noted Very H igh Sp eed 65 ns (IL100) Typical P ropagation D elay Tim e D T L /T T L Com patible — 5 V Su p p ly

Cpi 8086

Contextual Info: INTEL CORP UP/PRPHLS bôE » • 4flEbl75 D1331MS in t e i In f p H A f i P Y EMBEDDED MICROPROCESSOR Static Intel386™ CPU Core — Low Power Consumption — Operating Power Supply 2.7V to 5.5V — Operating Frequency 12 MHz at 2.7V to 3.3V; 20 MHz at

varactor alpha

Abstract: DVG51 x-band varactor diode
Contextual Info: ALPHA IND/ S E M I C O N D U C T O R 4flE D • D 5 Ô 5 44 3 GG Ü1 32 Ö 104 * A L P GaAs Hyperabrupt Tuning Diodes ' T ' ö ‘7 ' 10' Features ■ ■ ■ ■ ■ ■ Description Alpha's GaAs hyperabrupt tuning varactors feature high Q up to 5,000 with constant gamma of 1.0 and 1.25

transistor 603 47e

Abstract: BTB 600 BR BLV103 71009 SB
Contextual Info: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for

Contextual Info: M S I SbSbMbb OODD41D llfl 4flE D ELECTRONICS INC R f l S O MSI GA-2/92 Series OA3120-QA3930 GA4120-GA4630 QA5120-QA5530 QA6120-SA6530 CONTROLLED GAMMA TUNING DIODES electronics i. T h e c a p a c i t a n c e v o l t a g e exponent, y ,is s p e c i f i e d for a p r e s c r i b e d

Contextual Info: isocon COnPONENTS LTD Jb • 7SC 4flflbSlQ DOOOlflB 17b • ISO D 3 SFH601 -1, SFH601 -2, SFH601 -3. SFH601-4, SFH601-5 OPTICALLY COUPLED ISOLATORS IS0C0Mf INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted

Contextual Info: INTEGRATED CIRCUIT bf l E D • 4fl2S7Sfl Q00DS17 04T ■ AV9154 Integrated Circuit Systems,Inc. Low Cost 16 Pin Frequency Generator Features General Description • Com patible w ith 286,386, and 486 CPUs • G enerates u p to 6 o u tp u t clocks for CPU plus

Contextual Info: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970

AV73-1

Abstract: AV73 AV9173-01CS8 AV9173-01CN8 AV731 HSYNC GENERATE PIXEL CLOCK AV9173 AV9173-01 AV9173-01CC8 video genlock pll soic 8
Contextual Info: bflE D INTEGRATED CIRCUIT • 4fl5S7Sfl DQOOflfll 23S ■ ICS AV9173 Integrated Circuit Systems, Inc. Video Genlock PLL Features General Description • Phase-detector/VCO circuit block • Ideal for genlock system • Reference clock range 15 kHz to 1 MHz

Contextual Info: I S OC OM COMPONE NTS LTD 75C D • 4flabS10 □□□□Gt.a T I S ■ ISO_ T-41-83 H24A1 H24A2 Optically Coupled Isolators FEATURES ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted • 4500 V Isolation • 2mm (min.) Internal Separation • 4 Pin Dual-In-Line Package

2SK799

Abstract: 100C
Contextual Info: N E C ELECTRONICS INC 98D 18948 D ~/3 T ~ - N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR "t ô D E S C R IP T IO N D e L.427S25 0aia^4fl T I 2SK799 The 2 S K 799 is N-channel MOS Field Effect Power Transistor P A C K A G E D IM E N S IO N S in millimeters (Inches

R0210

Abstract: PAD10 PAD100 PAD20 PAD50 XPAD10 XPAD100 XPAD20 XPAD50 low leakage pico amp diode
Contextual Info: PAD1 / PAD2 1PAD5 / PAD10 / PAD20 / PAD50 CALOGIC CORP 1044322 000042b 2 m C G C 4flE D calocft Low Leakage Pico Amp Diodes CORPORATION V PAD1 /PAD2/PAD5/PAD10/PAD20/PAD50 'T'ot-qo FEATURES DESCRIPTION • Low Leakage . 1 pA{PAD1

Contextual Info: SD2201SD221 CALOGIC 4flE D CORP • lfl443E2 0000247 2 « C G C High Speed Analog N-Channel Enhancement-Mode DMOS Power FETs c a l o c f i c CORPORATION V SD220/SD221 'T '- Î S -2 .5 FEATURES DESCRIPTION: • Fast S w itch in g . <1.0ns typ