mhx2
Abstract: No abstract text available
Text: PEM Series CHASSIS MOUNT, MULTI-STAGE EMI/RFI LINE FILTER MECHANICAL DIMENSIONS Unit: mm A L L' 2x N 4.8 N' E D FEATURES The PEM series offers wide variety of high performance EMI filters in numerous packages. This series offers a variety of circuit types with multiple stages of filtration over a
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10KHz
30MHz.
115/250VAC
PEM20Q-8M-GC3
PEM20Q-8-GC3
mhx2
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Untitled
Abstract: No abstract text available
Text: PEM Series C H A S S IS M O U N T , MULTI-STAGE EMI/RFI LINE FILTER MECHANICAL D IM E N S IO N S Unit: mm TO @ ^ C€ FEATURES The PEM series offers wide variety of high performance EMI filters in numerous packages. This series offers a variety of circuit types with multiple stages of filtration over a
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30MHz.
115/250VAC
PEM20Q-8-GC3
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foto resistor
Abstract: parallel scrambler 24 bit lfsr foto sensor AS7B923 AS7B923PEC-160XT circuit diagram of rf transmitter and receiver foto transistor CY7B923 PLCC-28 fifo asi cypress
Text: PEM AS7B923/933PEC HOTLinku u Devices General Description Plastic Encapsulated Microcircuit HOTLink u Transmitter/Receiver ASI’s, AS7B923PEC and AS7B933PEC HOTLinku Transmitter, Receiver pair are up-screened Plastic Encapsulated Serial PHY devices providing point-to-point communication building blocks
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AS7B923/933PEC
AS7B923PEC
AS7B933PEC
160Mbps
AS7B923PEC
AS7B933PEC
AS7B923PEC-160/ET
AS7B923PEC-160/XT
160Mbps
foto resistor
parallel scrambler 24 bit lfsr
foto sensor
AS7B923
AS7B923PEC-160XT
circuit diagram of rf transmitter and receiver
foto transistor
CY7B923
PLCC-28
fifo asi cypress
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MS-026D
Abstract: as5sp128k32dq
Text: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable
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AS5SP128K36
MS-026D
as5sp128k32dq
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Untitled
Abstract: No abstract text available
Text: Radial Leaded Capacitors Metallized Polypropylene Dielectric - MKP Preformed Case with Epoxy Endfill Insulation Resistance MegOhms x MicroFarads a 30,000 100,000 100 VDC Need Not Exceed MegOhms Test Voltage Measured after 1 minute of electrification. Capacitor pem (mm)
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UL94V0)
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MSK4854
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 600V/200A THREE PHASE BRIDGE PEM WITH BRAKE 4854 FEATURES: Replaces MSK4851 with Lower Conduction Loss Full Three Phase Bridge Configuration with SCR/IGBT Brake 600V Rated Voltage 200A Continuous Output Current
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MIL-PRF-38534
00V/200A
MSK4851
MSK4854
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Untitled
Abstract: No abstract text available
Text: COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,
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AS4DDR32M16
66-Pin
AS4DDR32M16DG-75/IT
-40oC
105oC
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Untitled
Abstract: No abstract text available
Text: COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,
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AS4DDR32M16
66-Pin
AS4DDR32M16DG-75/IT
-40oC
105oC
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AS5SP128K32DQ
Abstract: CMOS linear array
Text: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time
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AS5SP128K32DQ
MS026-D/BHA
AS5SP128K32DQ
CMOS linear array
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Untitled
Abstract: No abstract text available
Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0
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AS5SP256K36DQ
MS026-D/BHA
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transistor w2d
Abstract: transistor w2a 1050C 850C
Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array
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AS5SP512K36DQ
MS026-D/BHA
transistor w2d
transistor w2a
1050C
850C
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transistor w2d
Abstract: AS5SP128K36DQ
Text: COTS PEM AS5SP128K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array
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AS5SP128K36DQ
200Mhz
166Mhz
133Mhz
MS026-D/BHA
transistor w2d
AS5SP128K36DQ
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Untitled
Abstract: No abstract text available
Text: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\
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AS5SP256K36DQ
AS5SP256K36DQ
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,
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AS4DDR32M16
105oC
-55oC
125oC
AS4DDR32M16
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NASM45938
Abstract: NASM25027 MIL-S-8879 MIL-PRF-46010 PennEngineering LUBRICANT NASM25027 NATIONAL AEROSPACE STANDARDS MIL-S-8879 A M5 self-locking nut 5052-H34
Text: M I N I AT U R E S ELF-CLINCHING F ASTENERS MINIATURE SELFCLINCHING FASTENERS PEM brand miniature fasteners fit into a minimal space and provide strong, reusable threads. Types FE, FEO and UL are self-locking. Types FE and FEO meet locking torque requirements of NASM25027
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NASM25027
NASM45938/7
CAGE-46384
NASM45938
NASM25027
MIL-S-8879
MIL-PRF-46010
PennEngineering
LUBRICANT NASM25027
NATIONAL AEROSPACE STANDARDS
MIL-S-8879 A
M5 self-locking nut
5052-H34
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w2d 98
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit
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AS5SP256K36DQ
AS5SP256K36DQ
w2d 98
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32M16
Abstract: AS4DDR32M16 DDR250 DDR266B DDR333
Text: CO TS PEM COTS SDRAM Austin Semiconductor, Inc. 8 Meg x 16 x 4 Banks AS4DDR32M16 PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,
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AS4DDR32M16
66-Pin
AS4DDR32M16DG-75/IT
-40oC
105oC
32M16
AS4DDR32M16
DDR250
DDR266B
DDR333
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Untitled
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36 BLOCK DIAGRAM OE\ ZZ CLK CE1\ CE2 I/O Gating and Control CE3\ BWE\ BWx\ CONTROL BLOCK GW\ ADV\ ADSC\ ADSP\ MODE A0-Ax AS5SP256K36 Rev. 2.1 09/11 BURST CNTL. Address Registers Row Decode Memory Array x36 SBP ❑ Synchronous Pipeline
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AS5SP256K36
220mA
180mA
140mA
120mA
110mA
100mA
35oc/w
275mA
250mA
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Untitled
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit
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AS5SP256K36DQ
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transistor w2d
Abstract: ADV748
Text: COTS PEM AS5SP1M18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address
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AS5SP1M18DQ
200Mhz
166Mhz
133Mhz
MS026-D/BHA
transistor w2d
ADV748
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PEM SOS-632-8
Abstract: SOS-440-10 7075-T6 aluminum sos-6440-4 SOS-832-16 SOS-632-12 SOS-440-12 BSOS-440-10 SO-440-6 SOS-440-8
Text: S ELF-CLINCHING S TA N D O F F S SELF-CLINCHING STANDOFFS These standoffs, which use the proven self-clinching design, install with a squeeze in punched or drilled round holes – and become permanently mounted in the thin sheet. PEM brand standoffs are installed with their heads flush with one surface
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SO-12
1-800-DIAL-PEM
CAGE-46384
PEM SOS-632-8
SOS-440-10
7075-T6 aluminum
sos-6440-4
SOS-832-16
SOS-632-12
SOS-440-12
BSOS-440-10
SO-440-6
SOS-440-8
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT ] RELEASED FOR PUBLICATION BY AMP INCORPORATED, 19 Z Hoc . 19 DR RIGHTS RESERVED. 1 DBT REVISIONS 01 P DESCRIPTION LTR G DWN DATE EC 0 D 3 0 -0 0 8 0 -9 8 APVD PEM M -A P R -96 SPECIFICATIONS AT 100 mA FORWARD CURRENT, 25*C
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149DCG
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AS5SP256K36DQ
Abstract: transistor w2d 850C
Text: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.
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AS5SP256K36DQ
AS5SP256K36DQ
transistor w2d
850C
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SSRAM
Abstract: AS5SP256K36
Text: COTS PEM SSRAM AS5SP256K36 • 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 99 100 80 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC VDD 13 68 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21
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AS5SP256K36
220mA
180mA
140mA
120mA
110mA
100mA
35oc/w
275mA
250mA
SSRAM
AS5SP256K36
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