PECVD DESIGN Search Results

G173-G179

Abstract: transistor G179
Contextual Info: Journal of The Electrochemical Society, 156 ͑11͒ G173-G179 ͑2009͒ G173 0013-4651/2009/156͑11͒/G173/7/$25.00 The Electrochemical Society Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

impatt diode

Abstract: IMPATT-Diode Dielectric Constant Silicon Nitride N00014-87-K-0243 "x-ray detector" electrochemical gas sensors datasheet Zinc sulfide SCI mttf impatt transistor b 1238
Contextual Info: Custom Product Papers and Briefs PECVD Diamond Films for Use in Silicon Microstructures John A. Herb and Michael G. Peters—Crystallume, Menlo Park, CA Stephen C. Terry and J. H. Jerman—IC Sensors, Milpitas, CA ABSTRACT and 3 times higher than silicon nitride. In addition, the dry

Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320

Improving Front Side Process Uniformity by Back-Side Metallization

Contextual Info: Improving Front Side Process Uniformity by Back-Side Metallization Kezia Cheng Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA, 01801, kezia.cheng@skyworksinc.com Keywords: Back metallization, uniformity, capacitively coupled plasma reactor, inductively coupled

"Pressure transducer"

Abstract: Silicon Microstructures accelerometer Silicon Microstructures vibrating interferometer silicon diodes Microstructures
Contextual Info: S SE EN NS SO OR R P PR RO OD DU UC CT TS S 2001 M E A S U R E M E N T S P E C I A L T I E S CUSTOM PRODUCT PAPERS AND BRIEFS • Silicon Micromachining Design and Fabrication • An Electrostatically Actuated Micro-Relay • The Fabrication and Use of Micromachined,

BFM 4a

Abstract: CP0805 LP0805 LP0603 40 gHz spiral antenna
Contextual Info: A Review of High Frequency Passive Component Technologies Thin-Film, Thick-Film, Discretes & PMC for RF Design Applications A B S T R A C T : This article traces the evolution of these technologies and discusses the benefits and trade offs for each. The current level of RF component

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

Contextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have

nitto 201

Abstract: mp8000ch4 8361H CY62128B MP8000CH4-A2 MP8000C 7C62128
Contextual Info: Cypress Semiconductor Technology Derivative Qualification Report QTP# 99396 VERSION 1.2 November, 2000 R52LD-5R Technology Fab 4 Cypress CY62128B 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069

CY62126

Abstract: 0/7C62126/7V
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 99387 VERSION 1.1 June, 2000 R52D-3 Technology , Fab 4 CY62126 64K x 16 Static RAM CY62127 64K x 16 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: HMMC-3108 HMMC-5200 HBT transistor GaAs DC-20 HMMC-3008 HMMC5200 HBT transistor Die Attach and Bonding Guidelines HB2A
Contextual Info: HB2A Process Reliability Summary Heterojunction Bipolar Transistor IC Process Application Note # 53 - Rev. A March 1999 1.0 Introduction • HTOL Testing • RFOL Testing • Reliability & Environmental Tests for Plastic Packaged Parts • ESD Sensitivity

62137A

Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell

7C11483

Abstract: PECVD 8361H CY62128B CY62148B
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 004405 VERSION 1.0 January, 2001 Micro Power Asynchronous R52LD-5R Technology Fab 4 Cypress CY62148B 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director

CY62137V

Abstract: CY62138V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor

CEL9200

Abstract: 8361H A100R CY7C1329 JESD22
Contextual Info: Cypress Semiconductor Technology Qualification Report QTP# 99311 VERSION 2.0 December, 2000 R52D-3Technology, Fab 4 Qualification CY7C1329 64K x 32 Synchronous-Pipelined Cache RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director

TC200 agilent

Abstract: DC-20 TC200 GaAs MMIC ESD, Die Attach and Bonding Guidelines MTTF testing HB2A TC-200
Contextual Info: HB2A Process Reliability Summary Heterojunction Bipolar Transistor IC Process Application Note # 53 - Rev. A Marketing March 1999 1.0 Introduction Included in this application note are reliability test descriptions and the test results for: • • • •

Si3N4

Contextual Info: EXCELICS SEMICONDUCTOR, INC. ADVANTAGES OF EXCELICS POWER FETS • High P-1: Typical Past-P-1<0.7dBm. • High Gain, High ft fmax and High PAE. • High IP3: Typical 13dB above P-1 for GaAs FETs & 8dB above P-1 for Hetero-junction FETs. • Excellent Noise Figures, Particularly at Low Frequency.

74act3301

Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
Contextual Info: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):

STAC177B

Contextual Info: STAC150V2-350E RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Datasheet − production data Features • Operating frequencies up to 40.68 MHz ■ Excellent thermal stability ■ POUT = 350 W with 17 dB gain @ 40.68 MHz/150 V ■ Designed for class E operation

Contextual Info: Foundry Services for Integrated Circuits and MEMS Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s Custom Foundry Service is the alternative to traditional foundry services, allowing customers to

Contextual Info: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their

CY62148

Abstract: JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98502/98111 VERSION 1.0 February, 1999 4 Meg SRAM, R42H Technology, Hot Aluminum CY62148 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069 Cypress Semiconductor, Inc.

diode ED24

Abstract: transistor c 4058 4058 Lateral Effect Photodiode Concentrated Photovoltaic solar power short distance measurement PSD amorphous silicon amorphous silicon photodiode psd angle detection photodiode photovoltage
Contextual Info: RESEARCH NEWS Thin-Film Amorphous Silicon Position-Sensitive Detectors By Jasmine Henry* and John Livingstone Optical position-sensitive detectors are a useful class of sensor with a wide range of applications in machine control systems, industrial alignment and robotic vision. They

statistical process control

Abstract: wafer fab control plan pareto process control system spc data sheet SPC Technology TIONA wafer fab control SPC-2 SPC-3
Contextual Info: STATISTICAL PROCESS CONTROL STATISTICAL PROCESS CONTROL Linear Technology Corporation LTC has an active Statistical Process Control (SPC) system. It operates via the interrelated mechanisms of: a structure, control charts with built-in contingency action plans, operational area