G173-G179
Abstract: transistor G179
Text: Journal of The Electrochemical Society, 156 ͑11͒ G173-G179 ͑2009͒ G173 0013-4651/2009/156͑11͒/G173/7/$25.00 The Electrochemical Society Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
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G173-G179
/G173/7/
G173-G179
transistor G179
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Untitled
Abstract: No abstract text available
Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced
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300oC,
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impatt diode
Abstract: IMPATT-Diode Dielectric Constant Silicon Nitride N00014-87-K-0243 "x-ray detector" electrochemical gas sensors datasheet Zinc sulfide SCI mttf impatt transistor b 1238
Text: Custom Product Papers and Briefs PECVD Diamond Films for Use in Silicon Microstructures John A. Herb and Michael G. Peters—Crystallume, Menlo Park, CA Stephen C. Terry and J. H. Jerman—IC Sensors, Milpitas, CA ABSTRACT and 3 times higher than silicon nitride. In addition, the dry
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Abstract: No abstract text available
Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
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Improving Front Side Process Uniformity by Back-Side Metallization
Abstract: No abstract text available
Text: Improving Front Side Process Uniformity by Back-Side Metallization Kezia Cheng Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA, 01801, kezia.cheng@skyworksinc.com Keywords: Back metallization, uniformity, capacitively coupled plasma reactor, inductively coupled
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"Pressure transducer"
Abstract: Silicon Microstructures accelerometer Silicon Microstructures vibrating interferometer silicon diodes Microstructures
Text: S SE EN NS SO OR R P PR RO OD DU UC CT TS S 2001 M E A S U R E M E N T S P E C I A L T I E S CUSTOM PRODUCT PAPERS AND BRIEFS • Silicon Micromachining Design and Fabrication • An Electrostatically Actuated Micro-Relay • The Fabrication and Use of Micromachined,
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BFM 4a
Abstract: CP0805 LP0805 LP0603 40 gHz spiral antenna
Text: A Review of High Frequency Passive Component Technologies Thin-Film, Thick-Film, Discretes & PMC for RF Design Applications A B S T R A C T : This article traces the evolution of these technologies and discusses the benefits and trade offs for each. The current level of RF component
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S-HF0M806-N
BFM 4a
CP0805
LP0805
LP0603
40 gHz spiral antenna
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ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
Abstract: No abstract text available
Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have
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01AC09
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
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nitto 201
Abstract: mp8000ch4 8361H CY62128B MP8000CH4-A2 MP8000C 7C62128
Text: Cypress Semiconductor Technology Derivative Qualification Report QTP# 99396 VERSION 1.2 November, 2000 R52LD-5R Technology Fab 4 Cypress CY62128B 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069
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R52LD-5R
CY62128B
CY62128B-ZAC
CY62128B-SC
nitto 201
mp8000ch4
8361H
CY62128B
MP8000CH4-A2
MP8000C
7C62128
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CY62126
Abstract: 0/7C62126/7V
Text: Cypress Semiconductor Product Qualification Report QTP# 99387 VERSION 1.1 June, 2000 R52D-3 Technology , Fab 4 CY62126 64K x 16 Static RAM CY62127 64K x 16 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069
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R52D-3
CY62126
CY62127
CY62126/CY62127
CY62126
CY62127,
R52LD-3
37V-ZSIB
0/7C62126/7V
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GaAs MMIC ESD, Die Attach and Bonding Guidelines
Abstract: HMMC-3108 HMMC-5200 HBT transistor GaAs DC-20 HMMC-3008 HMMC5200 HBT transistor Die Attach and Bonding Guidelines HB2A
Text: HB2A Process Reliability Summary Heterojunction Bipolar Transistor IC Process Application Note # 53 - Rev. A March 1999 1.0 Introduction • HTOL Testing • RFOL Testing • Reliability & Environmental Tests for Plastic Packaged Parts • ESD Sensitivity
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15PSIG)
GaAs MMIC ESD, Die Attach and Bonding Guidelines
HMMC-3108
HMMC-5200
HBT transistor GaAs
DC-20
HMMC-3008
HMMC5200
HBT transistor
Die Attach and Bonding Guidelines
HB2A
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62137A
Abstract: No abstract text available
Text: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell
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R52LD
CY62136V/CY62137V
CY62138V
CY62136V/62137V/62138V
7C62136/7A)
7C62136A/62137A/62138A
H137V-ZSIB
CY62137V-ZSIB
30C/60
62137A
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7C11483
Abstract: PECVD 8361H CY62128B CY62148B
Text: Cypress Semiconductor Product Qualification Report QTP# 004405 VERSION 1.0 January, 2001 Micro Power Asynchronous R52LD-5R Technology Fab 4 Cypress CY62148B 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director
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R52LD-5R
CY62148B
CY62428B
CY62128B
CY62148B,
192HRS
30C/60
7C11483
PECVD
8361H
CY62148B
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CY62137V
Abstract: CY62138V
Text: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor
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R52LD
CY62136V/CY62137V
CY62138V
CY62136V/62137V/62138V
7C62136/7A)
CY62136V/62137V/62138V
R52LD-3
CY62137V
44-pin
CY62137V
CY62138V
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CEL9200
Abstract: 8361H A100R CY7C1329 JESD22
Text: Cypress Semiconductor Technology Qualification Report QTP# 99311 VERSION 2.0 December, 2000 R52D-3Technology, Fab 4 Qualification CY7C1329 64K x 32 Synchronous-Pipelined Cache RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director
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R52D-3Technology,
CY7C1329
R52D-3
CY7C1329-2Meg
Pipeline00
CY7C1329-AC
30C/60
CEL9200
8361H
A100R
CY7C1329
JESD22
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TC200 agilent
Abstract: DC-20 TC200 GaAs MMIC ESD, Die Attach and Bonding Guidelines MTTF testing HB2A TC-200
Text: HB2A Process Reliability Summary Heterojunction Bipolar Transistor IC Process Application Note # 53 - Rev. A Marketing March 1999 1.0 Introduction Included in this application note are reliability test descriptions and the test results for: • • • •
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TC200 agilent
DC-20
TC200
GaAs MMIC ESD, Die Attach and Bonding Guidelines
MTTF testing
HB2A
TC-200
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Si3N4
Abstract: No abstract text available
Text: EXCELICS SEMICONDUCTOR, INC. ADVANTAGES OF EXCELICS POWER FETS • High P-1: Typical Past-P-1<0.7dBm. • High Gain, High ft fmax and High PAE. • High IP3: Typical 13dB above P-1 for GaAs FETs & 8dB above P-1 for Hetero-junction FETs. • Excellent Noise Figures, Particularly at Low Frequency.
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1-80GHz.
Si3N4
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74act3301
Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
Text: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):
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88961501HA
5962-8961501QXA
DS26F31ME/883
DS26F31MJ/883
DS26F31MW/883
5962-7802302M2A
5962-7802302MEA
5962-7802302MFA
DS26F32ME/883
DS26F32MJ/883
74act3301
scl4412
75307
equivalent CD4015
jm38510/05101
DISCO DFG840
JM38510/33903BEA
74lvc3245
JM38510/05101BCA
JM38510/34001BCA
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STAC177B
Abstract: No abstract text available
Text: STAC150V2-350E RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Datasheet − production data Features • Operating frequencies up to 40.68 MHz ■ Excellent thermal stability ■ POUT = 350 W with 17 dB gain @ 40.68 MHz/150 V ■ Designed for class E operation
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STAC150V2-350E
Hz/150
2002/95/EC1
STAC177B
STAC150V2-350E
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Untitled
Abstract: No abstract text available
Text: Foundry Services for Integrated Circuits and MEMS Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s Custom Foundry Service is the alternative to traditional foundry services, allowing customers to
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M4007-052013
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Untitled
Abstract: No abstract text available
Text: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their
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MICFOUND-060514
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CY62148
Abstract: JESD22
Text: Cypress Semiconductor Qualification Report QTP# 98502/98111 VERSION 1.0 February, 1999 4 Meg SRAM, R42H Technology, Hot Aluminum CY62148 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069 Cypress Semiconductor, Inc.
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CY62148
7C621485A)
32-pin
CY62148
Divi619816794
CY62148-SC
JESD22
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diode ED24
Abstract: transistor c 4058 4058 Lateral Effect Photodiode Concentrated Photovoltaic solar power short distance measurement PSD amorphous silicon amorphous silicon photodiode psd angle detection photodiode photovoltage
Text: RESEARCH NEWS Thin-Film Amorphous Silicon Position-Sensitive Detectors By Jasmine Henry* and John Livingstone Optical position-sensitive detectors are a useful class of sensor with a wide range of applications in machine control systems, industrial alignment and robotic vision. They
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ED-24,
D-69469
diode ED24
transistor c 4058
4058
Lateral Effect Photodiode
Concentrated Photovoltaic solar power
short distance measurement PSD
amorphous silicon
amorphous silicon photodiode
psd angle detection photodiode
photovoltage
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statistical process control
Abstract: wafer fab control plan pareto process control system spc data sheet SPC Technology TIONA wafer fab control SPC-2 SPC-3
Text: STATISTICAL PROCESS CONTROL STATISTICAL PROCESS CONTROL Linear Technology Corporation LTC has an active Statistical Process Control (SPC) system. It operates via the interrelated mechanisms of: a structure, control charts with built-in contingency action plans, operational area
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