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    PEC 4 DIODE Search Results

    PEC 4 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PEC 4 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fx20smj3

    Abstract: 4470 mosfet
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		PDF FX20SMJ-3 100ns fx20smj3 4470 mosfet

    FX50SMJ-03

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


    Original     		PDF FX50SMJ-03 FX50SMJ-03

    fx6smj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0


    Original     		PDF

    fx30smj03

    Abstract: FX30SM
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


    Original     		PDF FX30SMJ-03 fx30smj03 FX30SM

    fx3smj3

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX3SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX3SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0


    Original     		PDF

    fx30smj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		PDF FX30SMJ-2 100ns fx30smj2

    fx20smj2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		PDF FX20SMJ-2 100ns fx20smj2

    fx6smj06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		PDF FX6SMJ-06 fx6smj06

    fx30smj06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


    Original     		PDF FX30SMJ-06 fx30smj06

    FX50SMJ-2

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		PDF FX50SMJ-2 100ns FX50SMJ-2

    FX70SMJ-03

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX70SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX70SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


    Original     		PDF FX70SMJ-03 FX70SMJ-03

    FX30SMJ-3

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2


    Original     		PDF FX30SMJ-3 100ns FX30SMJ-3

    FX20S

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


    Original     		PDF FX20SMJ-03 FX20S

    fx6smj3

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0


    Original     		PDF 100ns fx6smj3

    fx20smj-06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


    Original     		PDF FX20SMJ-06 fx20smj-06

    M34282E2GP

    Abstract: R2h DIODE M34282M1 M34282M1-XXXGP M34282M2-XXXGP
    Text: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer


    Original     		PDF

    r2l diode

    Abstract: R2h DIODE M34282Mx-XXXGP
    Text: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer


    Original     		PDF

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63815P/FP/KP 300mA M63815P/FP/KP 18P4G 20P2N-A M63815FP M63815KP M63815P

    GP 015 DIODE

    Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


    Original     		PDF M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP GP 015 DIODE GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


    Original     		PDF M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP

    Untitled

    Abstract: No abstract text available
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63816P/FP/KP 300mA M63816P/FP/KP

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays


    Original     		PDF M63817P/FP/KP 300mA M63817P/FP/KP 18P4G 20P2N-A M63817FP M63817KP M63817P

    BOX53C

    Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
    Text: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54


    OCR Scan     		PDF BDX53 BDX54 BDX53A, BDX54A BDX53B BDX54B BDX53C, BDX54C BOX53C BOX53 box54 BDX54 BDX53A BDX53C BDX54A BDX54B

    transistor m1 sS 125

    Abstract: No abstract text available
    Text: - r - 3 f - S F 6 -1 0 0 R 06 KF EUPEC SEE » 34032^7 D G aaa? G bT Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 600 U PEC 100 A 150 - 4 0 /+ 150 - 4 0 / + 125 tvjo p ts tg Icrm tp = 1ms 200 A P,ot


    OCR Scan     		PDF