PE42510
Abstract: j8 er capacitor QFN5X5-32LD AVX COG Capacitor Transistor z1 smd 142-0701-801 Z1 SMD J502-ND CAPACITOR SMD AVX J9 SMD CODE MARKING
Text: 5 4 3 2 1 J1 SMA 1 2 D NC RF1 NC NC NC GND NC NC U1 QFN5X5-32LD PE42510 NC RF2 NC NC NC NC GND NC 1 9 10 11 12 13 14 15 16 2 1 J3 SMA 24 23 22 21 20 19 18 17 2 1 2 3 4 5 6 7 8 NC NC RES VDD V1 NC NC (VSS) J2 SMA GND NC NC NC RFC NC NC GND 32 31 30 29 28
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QFN5X5-32LD
PE42510
100pF
PZC36DABN
478-1227-2-ND
478-1175-2-ND
J502-ND
S2021-36-ND
20Components/Web
PE42510
j8 er capacitor
QFN5X5-32LD
AVX COG Capacitor
Transistor z1 smd
142-0701-801
Z1 SMD
J502-ND
CAPACITOR SMD AVX
J9 SMD CODE MARKING
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™
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PE42510A
PE42510A
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PE42510
Abstract: PE42510A QFN5X5-32LD PE42510AMLI 24 leads qfn 5x5 Circuit details of 3502 rf spdt mhz dbm PE42510AMLI-Z hotel SPDT T/R SWITCH
Text: Product Specification PE42510A SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™
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PE42510A
PE42510A
PE42510
QFN5X5-32LD
PE42510AMLI
24 leads qfn 5x5
Circuit details of 3502
rf spdt mhz dbm
PE42510AMLI-Z
hotel
SPDT T/R SWITCH
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz ® • 50 Watt P1dB compression point 10 Watts <8:1 VSWR Normal Operation 29 dB Isolation @ 800 MHz <0.3 dB Insertion Loss at 800 MHz
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PE42510A
32-lead
PE42510A
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™
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PE42510A
PE42510A
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS®
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PE42510A
PE42510A
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description Features • No blocking capacitors required The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless
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PE42510A
PE42510A
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42820 UltraCMOS SPDT RF Switch 30 - 2700 MHz Product Description The PE42820 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.
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PE42820
PE42820
PE42510A
32-lead
DOC-13614-3
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PE42552
Abstract: PE4251 F QFN 3X3 PE42440 pe4259 PE4257 PE4283 PE4210 PE42451 PE4246
Text: Wireless RF Switches May 2010 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, 4 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion
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Tower10B-6
PE42552
PE4251
F QFN 3X3
PE42440
pe4259
PE4257
PE4283
PE4210
PE42451
PE4246
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a
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PE4251
PE4251
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PE42510A
Abstract: PE42510 PE42650 PE42650A
Text: NEWS RELEASE November 2008 Peregrine Semiconductor annonce une ligne de commutateurs RF de forte puissance Des circuits 50 Watts idéaux pour les applications radio mobiles Peregrine Semiconductor Corporation, fournisseur des circuits intégrés RF CMOS et à signaux mixtes
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PE42510A,
PE42650A,
PS138fr
PE42510A
PE42510
PE42650
PE42650A
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PE42510
Abstract: PE42510A
Text: NEWS RELEASE November 2008 HF-Leistungsschalter für 50 W von Peregrine Semiconductor Der HF-Schalter für den Mobilfunk San Diego, Kalifornien, USA, und München, Deutschland, 10. November 2008 – Die Peregrine Semiconductor Corporation, einer der führenden Anbieter hochleistungsfähiger HF-CMOS- und MixedSignal-ICs für die Kommunikationstechnik, stellt eine neue Linie hochleistungsfähiger HF-Schalter in
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PE42510A
PE42650A
PS138de
PE42510
PE42510A
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QFN-32L 5X5
Abstract: No abstract text available
Text: Wireless RF Switches February 2009 Highly Rugged UltraCMOS Switches Extend Performance to 7.5 GHz High Linearity, 2 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion
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4Hig73
10B-6
QFN-32L 5X5
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PE42359
Abstract: PE42924 PE42920 PE42422 LGA 16L 4X4 qfn 3x3 dc-dc HARP QFN 5X5 12L PE42551
Text: Wireless RF Switches January 2013 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, High HBM ESD and CMOS Control Interface Ideal for RF Applications The Peregrine UltraCMOS® RF switches feature high ESD tolerance and high linearity providing an exceptionally
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PE33632
Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
Text: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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and940
10B-6
PE33632
PE33362
PE33632 die
pe33382
PE42692
PE33362 die
PE42510A1
PE4340
PE33631
PE42694
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PE42510A
Abstract: No abstract text available
Text: COMUNICATO STAMPA November 2008 Peregrine Semiconductor annuncia una linea di switch RF ad alta potenza I dispositivi da 50 Watt sono ideali per le applicazioni radio mobili San Diego, California, e Monaco, Germania, 10 Novembre 2008 - Peregrine Semiconductor
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PE42510A
PE42650A
PS138it
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PE42510A
Abstract: PE42510
Text: NEWS RELEASE November 2008 Peregrine Semiconductor presenterar nya RF-switchar för hög effekt 50 W-komponenter idealiska för mobila radiotillämpningar San Diego, Kalifornien, och München, Tyskland, 10 november 2008 - Peregrine Semiconductor Corporation, en ledande leverantör av RF CMOS- och blandsignal-baserade kommunikationskretsar av
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PE42510A
PE42650A
PS138se
PE42510A
PE42510
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PE42510A
Abstract: PE43204 PE9309 PE97022 PE97042 PE97632 SYNTHESIZER FOR phased array SPDT FETs "stacked fets"
Text: MAY 2009 The Sky’s the Limit: Silicon-on-Sapphire Processing Takes Flight in Defense and Space Systems by Dale Robinette, Peregrine Semiconductor Corporation S ince the invention of radios, military and space systems have been early adopters of wireless technology. As commercial use
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TAG 302-600
Abstract: PE42924
Text: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)
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PE42692
Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
Text: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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high-re3940
10B-6
PE42692
F QFN 3X3
PE42xx
SPDT stacked FET
PE42552
03 07 qfn 3x3
flip flap
PE3336
PE3341
PE4230
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PE4251
Abstract: PE4251MLI PE4251MLI-Z PE4250 PE42510 33MIL
Text: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a
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PE4251
PE4251
PE4251MLI
PE4251MLI-Z
PE4250
PE42510
33MIL
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solid state RF HIGH-POWER SWITCH
Abstract: PE42510A PE42510
Text: NEWS RELEASE EDITORIAL CONTACT: Mark Schrepferman, Director, Communications and Industrial Products Marketing 858 731-9512 9380 Carroll Park Drive San Diego, CA USA 92121 858-731-9400 Cindy Trotto, Marketing Communications Manager (602) 750-7203 Reader/Literature Inquiries:
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viasat
Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
Text: JANUARY 2009 High Power UltraCMOS Switches and Mixers Satisfy Demanding Military Design Challenges by Dale Robinette and Mark Schrepferman, Peregrine Semiconductor Corp. D ramatically revamped several years ago, the Joint Tactical Radio System JTRS program looks to be on track
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com/articles/2008/2008
PE95420)
viasat
x-band power transistor 50W
PE4150
PE42510A
PE95420
Thales x-band
X-band marine radar
stacked FETs
JTRS
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PE42510A
Abstract: No abstract text available
Text: LEHDISTÖTIEDOTE November 2008 Peregrine Semiconductor julkistaa uusia High-Power RF-kytkinpiirejä 50 Watin tehonkesto soveltuu erinomaisesti mobiiliradiosovelluksiin San Diego, Kalifornia Yhdysvallat ja München (Saksa), marraskuun 10., 2008 - Peregrine
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PE42510A
PE42650A
PS138fi
PE42510A
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