PE4230G-08MSOP-50A
Abstract: PE4230 PE4230-08MSOP-50A PE4230-EK PE4230 2000 PE4230-08MSOP-EK
Text: Product Specification PE4230 SPDT High Power UltraCMOS RF Switch Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS
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PE4230
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PE4230-EK
PE4230 2000
PE4230-08MSOP-EK
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4230 SPDT High Power UltraCMOS RF Switch Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS
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PE4230
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4230 SPDT High Power UltraCMOS RF Switch Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS
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PE4230
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4230 SPDT High Power UltraCMOS RF Switch Product Description The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3.0 GHz. This single-supply reflective switch integrates on-board CMOS
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4230 SPDT High Power UltraCMOS RF Switch The PE4230 UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC through 3000 MHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL
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PE4230
Abstract: PE4230-EK
Text: PRELIMINARY SPECIFICATION PE4230 SPDT High Power MOSFET RF Switch Product Description The PE4230 High Power MOSFET RF Switch is designed to cover a broad range of uses in the 10 MHz through 2.5 GHz frequency range. This switch integrates on-board CMOS control logic with a low voltage CMOS
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PE4230
Abstract: PE4230-08MSOP-50A PE4230-EK
Text: PRODUCT SPECIFICATION PE4230 SPDT High Power MOSFET RF Switch Product Description The PE4230 SPDT High Power MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply reflective switch integrates onboard CMOS control logic driven by a simple, single-pin
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PE4230
Abstract: PE4230-08MSOP-50A PE4230-EK PE4230 2000 marking 8C
Text: PRODUCT SPECIFICATION PE4230 SPDT High Power MOSFET RF Switch Product Description The PE4230 SPDT High Power MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply reflective switch integrates onboard CMOS control logic driven by a simple, single-pin
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PE4230
PE4230
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PE4230-EK
PE4230 2000
marking 8C
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ESG-4000
Abstract: PE4230 PE4210 PE4220 PE42XX PE4230 2000
Text: PE4210/4220/4230 EVALUATION KIT USER’S MANUAL 6175 Nancy Ridge Drive, San Diego, CA 92121 858 455-0660, Fax (858) 455-0770 http://www.peregrine-semi.com Peregrine Semiconductor Corporation 1 Doc# 79/0036~00A Copyright 2000 Peregrine Semiconductor Corp. All rights reserved. Printed in the United States of
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PE4210,
PE4220
PE4230
ESG-4000
8563E
ESG-4000
PE4210
PE42XX
PE4230 2000
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QFN-32L 5X5
Abstract: No abstract text available
Text: Wireless RF Switches February 2009 Highly Rugged UltraCMOS Switches Extend Performance to 7.5 GHz High Linearity, 2 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion
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PE42552
Abstract: PE4251 F QFN 3X3 PE42440 pe4259 PE4257 PE4283 PE4210 PE42451 PE4246
Text: Wireless RF Switches May 2010 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, 4 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion
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F QFN 3X3
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PE4210
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PE42359
Abstract: PE42924 PE42920 PE42422 LGA 16L 4X4 qfn 3x3 dc-dc HARP QFN 5X5 12L PE42551
Text: Wireless RF Switches January 2013 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, High HBM ESD and CMOS Control Interface Ideal for RF Applications The Peregrine UltraCMOS® RF switches feature high ESD tolerance and high linearity providing an exceptionally
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QFN 4x4 mm 20L
Abstract: QUALCOMM QFN CQFJ qualcomm temperature spec rf spdt mhz dbm PE9308 CQFj 44 GSM qualcomm PE3336 PE3341
Text: 2007 Second Edition Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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product-3940
10B-6
QFN 4x4 mm 20L
QUALCOMM QFN
CQFJ
qualcomm temperature spec
rf spdt mhz dbm
PE9308
CQFj 44
GSM qualcomm
PE3336
PE3341
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PE42692
Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
Text: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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10B-6
PE42692
F QFN 3X3
PE42xx
SPDT stacked FET
PE42552
03 07 qfn 3x3
flip flap
PE3336
PE3341
PE4230
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PE33632
Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
Text: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for
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PE33632 die
pe33382
PE42692
PE33362 die
PE42510A1
PE4340
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TAG 302-600
Abstract: PE42924
Text: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)
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