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    PD200 Search Results

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    PD200 Price and Stock

    Central Semiconductor Corp CMPD2005SG-TR-PBFREE

    DIODE ARRAY GP 300V 200MA SOT23
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    DigiKey CMPD2005SG-TR-PBFREE Digi-Reel 44,510 1
    • 1 $0.47
    • 10 $0.286
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    • 1000 $0.12087
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    CMPD2005SG-TR-PBFREE Reel 39,000 3,000
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    Vishay Beyschlag MCT0603PD2001DP500

    RES 2K OHM 0.5% 1/4W 0603
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    DigiKey MCT0603PD2001DP500 Digi-Reel 33,305 1
    • 1 $0.28
    • 10 $0.199
    • 100 $0.1392
    • 1000 $0.09391
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    MCT0603PD2001DP500 Cut Tape 33,305 1
    • 1 $0.28
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    MCT0603PD2001DP500 Reel 30,000 5,000
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    ROHM Semiconductor SDR03EZPD2003

    HIGH ANTI-SURGE THICK FILM CHIP
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    DigiKey SDR03EZPD2003 Cut Tape 9,680 1
    • 1 $0.22
    • 10 $0.112
    • 100 $0.0645
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    SDR03EZPD2003 Reel 5,000 5,000
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    Avnet Americas SDR03EZPD2003 Reel 5,000
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    Mouser Electronics SDR03EZPD2003 13,561
    • 1 $0.22
    • 10 $0.073
    • 100 $0.047
    • 1000 $0.037
    • 10000 $0.019
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    Chip1Stop SDR03EZPD2003 Cut Tape 4,750
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    ROHM Semiconductor SDR03EZPD2002

    HIGH ANTI-SURGE THICK FILM CHIP
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    DigiKey SDR03EZPD2002 Cut Tape 9,225 1
    • 1 $0.22
    • 10 $0.112
    • 100 $0.0645
    • 1000 $0.04158
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    SDR03EZPD2002 Reel 5,000 5,000
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    Mouser Electronics SDR03EZPD2002 10,350
    • 1 $0.22
    • 10 $0.073
    • 100 $0.047
    • 1000 $0.037
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    Chip1Stop SDR03EZPD2002 Cut Tape 4,950
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    ROHM Semiconductor SDR03EZPD2001

    HIGH ANTI-SURGE THICK FILM CHIP
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    DigiKey SDR03EZPD2001 Cut Tape 6,602 1
    • 1 $0.22
    • 10 $0.112
    • 100 $0.0645
    • 1000 $0.04158
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    SDR03EZPD2001 Reel 5,000 5,000
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    Mouser Electronics SDR03EZPD2001 9,824
    • 1 $0.22
    • 10 $0.075
    • 100 $0.047
    • 1000 $0.037
    • 10000 $0.031
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    Chip1Stop SDR03EZPD2001 Cut Tape 10,000
    • 1 -
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    • 100 $0.046
    • 1000 $0.0276
    • 10000 $0.0173
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    PD200 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD2000 Precision Devices Original PDF
    PD20-0010-S Tyco Electronics Three-Way In-Phase Power Divider 25 - 1000 MHz Original PDF
    PD200-0212 Bowman Dispensers PROTECTIVE WEAR DISPENSER - UNIV Original PDF
    PD-20-0050 Polara Engineering Delay Line TAPPED 20TAP 1IN 1NS ABS 50NS MAX Scan PDF
    PD-20-00500 Polara Engineering Delay Line TAPPED 20TAP 1IN 25NS ABS 500NS MAX Scan PDF
    PD-20-0100 Polara Engineering Delay Line TAPPED 20TAP 1IN 2.5NS ABS 100NS MAX Scan PDF
    PD20010-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD20010S-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD20010STR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS N-CH 40V POWERSO-10RF STR Original PDF
    PD20010TR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS N-CH 40V POWERSO-10RF FORM Original PDF
    PD20012 Nihon Inter Electronics DIODE MODULE 200A/1200 to 1600V Original PDF
    PD20015C STMicroelectronics RF power transistor - LdmoST family Original PDF
    PD20015-E STMicroelectronics RF power transistor - LdmoST family Original PDF
    PD20015S-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF Original PDF
    PD20016 Nihon Inter Electronics DIODE MODULE 200A/1200 to 1600V Original PDF
    PD2008 Nihon Inter Electronics DIODE MODULE 200A/800V Original PDF
    PD2008 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    PD-2009 Pericom Semiconductor 12-Contact, Thin Dual-in-line Flat No-Lead, TDFN Original PDF
    PD200FG120 SanRex THYRISTOR MODULE Original PDF
    PD200FG160 SanRex THYRISTOR MODULE Original PDF

    PD200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIODE 200A Avg 1200~1600 Volts •回路図 CIRCUIT PC20012 PC20016 PD20012 PD20016 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧


    Original
    PDF PC20012 PC20016 PD20012 PD20016 PC20012/PD20012 PC20016/PD20016 125VRM 25IFM

    Untitled

    Abstract: No abstract text available
    Text: DIODE 200A Avg 800 Volts ฀ ฀ ฀ ฀ ฀ ฀ PD200S8


    Original
    PDF PD200S8

    M243

    Abstract: PD20015C
    Text: PD20015C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive


    Original
    PDF PD20015C 2002/95/EC PD20015C M243

    AN1294

    Abstract: JESD97 J-STD-020B PD20015-E
    Text: PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original
    PDF PD20015-E PD20015S-E 2002/95/EC PowerSO-10RF PD20015-E AN1294 JESD97 J-STD-020B

    PC20012

    Abstract: PC20016 PD20012 PD20016
    Text: DIODE 200A Avg 1200~1600 Volts •回路図 CIRCUIT PC20012 PC20016 PD20012 PD20016 ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧


    Original
    PDF PC20012 PC20016 PD20012 PD20016 PC20012/PD20012 PC20016/PD20016 125VRM 25IFM PC20016 PD20016

    Untitled

    Abstract: No abstract text available
    Text: DIODE 200A Avg 1600 Volts ฀ ฀ ฀ ฀ ฀ ฀ PD200S16 ฀ ฀ AVERAGE FORWARD POWER DISSIPATION FORWARD CURRENT VS. VOLTAGE PD200S16 Per 1 Arm. 5000 ฀ ฀ ฀ 350 1000 ฀ 500 ฀ ฀ 200 100 ฀ 50 ฀ ฀ 20 25 150 10 ฀ ฀ 5 AVERAGE FORWARD POWER DISSIPATION (W)


    Original
    PDF PD200S16 PD200S16 D200S16

    PC2008

    Abstract: PD2008 A80000
    Text: DIODE PC2008 PD2008 200A Avg 800 Volts •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage


    Original
    PDF PC2008 PD2008 PC2008/PD2008 150VRM 25IFM PC2008 PD2008 A80000

    PD20010-E

    Abstract: PD20010
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original
    PDF PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010

    PD200KN8

    Abstract: No abstract text available
    Text: 200A Avg 800 Volts DIODE •回路図 CIRCUIT PD200KN8 ■外形寸法図 OUTLINE DRAWING Dimension:[mm] ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol くり返しピーク逆電圧 Repetitive Peak Reverse Voltage


    Original
    PDF PD200KN8 PD200KN8 210ms 150VRM 25IFM

    PC2008

    Abstract: PD2008
    Text: DIODE MODULE PC2008 PD2008 200A/800V OUTLINE DRAWING FEATURES PC * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PD TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings


    Original
    PDF PC2008 PD2008 00A/800V E187184 10msec PC/PD2008 PD2008

    PD20012

    Abstract: PC20012 PC20016 PD20016 RMS-314
    Text: DIODE MODULE PC20012 PC20016 200A/1200 to 1600V PD20012 PD20016 OUTLINE DRAWING FEATURES PC * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PD TYPICAL APPLICATIONS * Rectified For General Use


    Original
    PDF PC20012 PC20016 00A/1200 PD20012 PD20016 E187184 PD20012 PC20016 PD20016 RMS-314

    m243

    Abstract: PD20015C JESD97
    Text: PD20015C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original
    PDF PD20015C 2002/95/EC PD20015C PD20015Cn m243 JESD97

    PD200

    Abstract: PD200I 1A160 NOVOTECHNIK 1B160
    Text: Single-Turn Wirewound Potentiometers PD200 Series A Special features • very small dimensions • 200 x 103 movements • excellent linearity ±0.4% • very robust • highest protection class B Sealed potentiometer with a wirewound resistance element for


    Original
    PDF PD200 PD200 PD200I 1A160 PD200I NOVOTECHNIK 1B160

    Untitled

    Abstract: No abstract text available
    Text: DIODE 200A Avg 800 Volts PD200S8 •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT (単位 Dimension:mm) PD 1 2 D1 3 D2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage


    Original
    PDF PD200S8 150VRM 25IFM

    PD200KN16

    Abstract: No abstract text available
    Text: 200A Avg 1600 Volts DIODE •回路図 CIRCUIT PD200KN16 ■外形寸法図 OUTLINE DRAWING Dimension:[mm] ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol くり返しピーク逆電圧 Repetitive Peak Reverse Voltage


    Original
    PDF PD200KN16 PD200KN16 210ms 150VRM 25IFM

    Untitled

    Abstract: No abstract text available
    Text: DIODE PC2008 PD2008 200A Avg 800 Volts •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING (単位 Dimension:mm) PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage


    Original
    PDF PC2008 PD2008 PC2008/PD2008 150VRM 25IFM

    PD20010

    Abstract: PD20010-E AN1294 J-STD-020B
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PDF PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 AN1294 J-STD-020B

    4445

    Abstract: PD2000
    Text: PD2000 VOLTAGE CONTROLLED CRYSTAL OSCILLATOR VCXO The PD2000 series offers a wide frequency adjustment range with an ACMOS/TTL compatible output. The PD2000 14 pin resistance welded package provides a hermetically sealed unit and operates over an extended


    Original
    PDF PD2000 PD2000 10k//10pF 600MHz) 274-XTAL/ 4445

    Untitled

    Abstract: No abstract text available
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original
    PDF PD20015-E 2002/95/EC PowerSO-10RF PD20015-E

    PD20015-E

    Abstract: PD-20015
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original
    PDF PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PD-20015

    PE3012N

    Abstract: PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6012 PC6016
    Text: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N


    OCR Scan
    PDF PC308 PC808 PC1008 PC1508 PC2008 PC3012 PF308N PF608N PF1008N PF1012N PE3012N PC10012 PC1008 PC1508 PC2008 PC3016 PC308 PC6012 PC6016

    IR 529

    Abstract: PC6012 PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6016
    Text: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N


    OCR Scan
    PDF PC308 PC808 PC1008 PC1508 PC2008 PC3012 PB3012N PE6012N 17-KutyfiiS PE10012N IR 529 PC6012 PC10012 PC1008 PC1508 PC2008 PC3016 PC308 PC6016

    SE 135 F

    Abstract: PC15012 PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6012
    Text: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N


    OCR Scan
    PDF PC308 PC808 PC1008 PC1508 PC2008 PC3012 PB3012N PE6012N 17-KutyfiiS PE10012N SE 135 F PC15012 PC10012 PC1008 PC1508 PC2008 PC3016 PC308 PC6012

    Untitled

    Abstract: No abstract text available
    Text: Central PD2003 PD2004 PD2004S Sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR PD2003, PD2004, CM PD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.


    OCR Scan
    PDF CMPD2003 CMPD2004 CMPD2004S CMPD2003, CMPD2004, PD2004S OT-23