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    PCP MOSFET Search Results

    PCP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    PCP MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain


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    EN5300A 2SK2316 062A-PCP 2SK2316] 250mm2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2303 PCP1402 Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 1.2A, 2.4Ω, Single PCP Features • On-resistance RDS on =1.8Ω(typ.) • Input Capacitance Ciss=210pF(typ.) • Halogen free compliance Specifications


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    A2303 PCP1402 210pF 600mm2Ã A2303-5/5 PDF

    2062a

    Abstract: 2SK2316
    Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive 2.5V drive . unit: mm 2062A-PCP [2SK2316] 1 : Gate 2 : Drain


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    EN5300A 2SK2316 062A-PCP 2SK2316] 250mm2 2062a 2SK2316 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2326 PCP1405 Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 0.6A, 6.5Ω, Single PCP Features • On-resistance RDS on 1=5Ω(typ.) • 2.5V drive • Protection diode in • Halogen free compliance Specifications


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    A2326 PCP1405 A2326-5/5 PDF

    PCP1403-TD-H

    Abstract: No abstract text available
    Text: Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C


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    ENA2294A PCP1403 600mm2Ã A2294-5/5 PCP1403-TD-H PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2294 PCP1403 Advance Information http://onsemi.com N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications


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    A2294 PCP1403 600mm2Ã A2294-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2227 PCP1302 P-Channel Power MOSFET −60V, −3A, 266mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=200mΩ(typ.) • 4V drive • Halogen free compliance • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C


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    ENA2227 PCP1302 600mm2Ã A2227-5/5 PDF

    2SK2153

    Abstract: 2SJ332S
    Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^


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    2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S PDF

    2SJ437

    Abstract: 2SK244
    Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA


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    SB20W03P SB40W03T SBA100-04ZP SBA160-Q4ZP SBA50-04Y SBA10Q-04Y SBA160-04Y characteristicsSJ466 2SJ437 2SJ257 2SK244 PDF

    e1220

    Abstract: 2SK2437
    Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.


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    MT950206TR e1220 2SK2437 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAfjYO New Products Of New Package 5/6-pi n XP Ser ies :FX type 2 SANYO new 5/6-pin XP packages are intermediate sized devices between SANYO PCP and TP packages and have high power capability. This packages line includes complex types of large-current switching transistors, of a low saturation-voltage transistor (fast


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    B1302 SB20W03P D1628 FX90KTR i11er MT970331TR PDF

    SB002-15SPA

    Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
    Text: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely


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    250mm' T0-126 SB005-09CP SB02-09CP SB10-09PCSJ T0-126LP T0-220CI T0-220ML SC-67, OT-186) SB002-15SPA SB005-09SPA SB01-15NP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143 PDF

    2SB1205

    Abstract: FX851
    Text: SANYO New Products Of New Package 5/6-pi n XP Seri es :FX type 2 SANYO new 5 /6 -p in XP packages a re in te rm ed ia te sized d e vices between SANYO PCP and TP packages and have high power cap a b ility . This packages lin e in clu d e s complex types of la rg e -c u rre n t sw itchin g t r a n s i s to r s , of a low s a tu ra tio n -v o lta g e t r a n s i s to r ( f a s t


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    B1121 SB30-03P B1302 SB20W03P D1628 0W03P 50202TR 2SB1205 FX851 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


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    2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD PDF

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


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    2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155 PDF

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


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    Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264 PDF

    2sc3153

    Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator


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    2SC3151 T03PB 10to40 2SC3152 2SC3I53 2SC3277 2sc3153 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3448 2SC3449 PDF

    Untitled

    Abstract: No abstract text available
    Text: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)


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    2SB1295 2SB1122 2SD1622 250mm2 SB007-03Q SB007W SB007T03Q FC806 SB007-03Q SB007W03Q PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2303A PCP1402 Power MOSFET 250V, 2.4Ω, 1.2A, Single N-Channel http://onsemi.com Features • On-resistance RDS on =1.8Ω (typ)  Input Capacitance Ciss=210pF (typ)  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C


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    ENA2303A PCP1402 210pF 600mm2ï A2303-5/5 PDF

    k669 transistor

    Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
    Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r


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    250mm Ratings/Ta-25 2SK2170UA) 2SK1069 2SK1332CV) 2SK209KH) 2SK2219CD) T0-126LP T0-220CI T0-220ML k669 transistor k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546 PDF

    3SK190

    Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
    Text: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip


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    2SK1645* 2SK1646* SGF104 SGF11v SGF15* 3SK190 SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715 PDF

    Untitled

    Abstract: No abstract text available
    Text: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3


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    2SJ381 FX207 2SJ382 2SJ383 2SJ419 2SJ420 FW101 2SK2316 FX208 2SK2317 PDF

    mosfet HF amplifier

    Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
    Text: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15


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    2SA1863Â 2SC4918* 2SA1857 2SC4400 2SC4399 2SA1688 FC119 2SC2814 2SC4504 2SA1724 mosfet HF amplifier 3SK266 2sk2073 2SK931 2SA1863 2SC4432 PDF

    svc253

    Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
    Text: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package


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    SVC321SPA SVC323 SVC325 SVC34KVA) SVC342 SVC343 SVC344 SVC345 SVC346 SVC347CVI) svc253 MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo PDF