PCH MOSFET MARKING CODE VISHAY SILICONIX Search Results

7130-1 transistor

Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Contextual Info: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200

Si5504DC-T1-E3

Abstract: Si5504DC
Contextual Info: Si5504DC Vishay Siliconix Complementary 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V ± 3.9 0.143 at VGS = 4.5 V ± 3.0 0.165 at VGS = - 10 V ± 2.8 0.290 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21

Si5517DU

Abstract: Si5517DU-T1-GE3 si5517
Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel

Si5513DC

Abstract: Si5513DC-T1
Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2

Si5509DC

Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V

Si5509DC

Abstract: 60417 VISHAY diode MARKING ED
Contextual Info: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a

42138

Abstract: Si5513DC Si5513DC-T1
Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2

SI5509DC

Abstract: Si5509DC-T1-GE3 si5509dc-t1-e3 si5509
Contextual Info: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V

Si5513DC

Abstract: Si5513DC-T1-E3
Contextual Info: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21

Si5517DU

Contextual Info: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V

42138

Abstract: Si5513DC Si5513DC-T1 VISHAY diode MARKING EB
Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2

Si5513DC

Abstract: Si5513DC-T1-E3
Contextual Info: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21

Si5509DC

Abstract: s417
Contextual Info: Si5509DC New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) 0.052 at VGS = 4.5 V ID (A) 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = –4.5 V –4.8a

Si5515DC

Abstract: Si5515DC-T1-E3
Contextual Info: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

N-Channel mosfet sot-363

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

Contextual Info: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V

Contextual Info: Si5519DU Vishay Siliconix New Product N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 VDS (V) N-Channel P-Channel 20

list of n channel fet

Abstract: Si5511DC-T1-E3
Contextual Info: New Product Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g • TrenchFET Power MOSFETs Qg (Typ) APPLICATIONS

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

si3585

Abstract: mosfet 23 Tsop-6 S1217
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see

Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see

Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel