PC-350 INVERTER Search Results

b774 transistor

Abstract: c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643
Contextual Info: CD 138 PC Series 10 000 h at 85°C CD 136 PK longer life CD 139 BL 105°C CD 135 BP 105°C longer life highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)

IGBT 50 amp 1200 volt

Abstract: 200 amp 120 V igbt Pt 1600 temperature sensor IGBT 50 amp 600 volt IGBT 400 amp 7MBR30SA060 diode 15 amp 30 volt 25 Amp 1200 volt diode IGBT 7MBR50SB120 IGBT 100 amps
Contextual Info: FOURTH GENERATION IGBT NEW 4th Generation NPT Technology Lower Power Dissipation Solderable Terminals Lower Inverter Noise Radiation Higher Capability, Short Circuit Withstand Square SCSOA at 10 x lc Internal Temperature Sensor 600 VOLT, S-SERIES POWER INTEGRATED MODULES, PT TECHNOLOGY

LTED

Abstract: TO-238
Contextual Info: _ 4686226 _ - , _ - I X Y S CORP D Ë J HbBbEEb . □ □ D O lb S — ^ -7 * - 3 ^ - / 3 H MOSBLOCIGBT Phase-Leg Modules Inverter Series High Speed Part Number CollectorVoltage Vces (Volts) Collector Current Id @ 25 °C Case lc(conl) IC (P u lted ) (Amps)

m713

Abstract: 7MBR35SD120 7MBR75SD060 7MBR25SA120 6MBI100S-060 7MBR30SA060 7MBR50SB120 7MBR100SB060 7MBR10SA120 7MBR15SA120
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモジュール Sシリーズ IGBT Modules, S series コンバータ部・ブレーキ部内蔵PIM Sシリーズ PIM/Built-in converter and brake S series 形 式 Device type インバータ部 Inverter［IGBT］

7MBR30SA060

Abstract: m713 7MBR50SB120 7MBR75SD060 7mbr75 2mbi300ta 7MBR35SD120 2mbi200ta-060 7MBR50SA060 7MBR25SA120
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモジュール Sシリーズ IGBT Modules, S series コンバータ部・ブレーキ部内蔵PIM Sシリーズ PIM/Built-in converter and brake S series 形 式 Device type インバータ部 Inverter［IGBT］

transistor* igbt 200A 300 V

Contextual Info: 7MBP 200RA-060 IGBT IPM 600V 6x200A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter

transistor* igbt 200A 300 V

Contextual Info: 7MBP 200RA-060 IGBT IPM 600V 6x200A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter

Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Snap-ins, 105C New! @For frequently change of regenerative voltage from AC servo amplifier and inverter control @Ideal use to power supply, specially power source with turn on and off frequently and highly voltage fluctuation

220 MF CAPACITOR 450v

Abstract: 22B35 30B3 capacitor 200mF EKMV421VSN681MA50S
Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Snap-ins, 105C New! @For frequently change of regenerative voltage from AC servo amplifier and inverter control @Ideal use to power supply, specially power source with turn on and off frequently and highly voltage fluctuation

capacitor 400V 200UF

Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Snap-ins, 105℃ New! ● For frequently change of regenerative voltage from AC servo amplifier and inverter control use to power supply, specially power source with turn on and off frequently and highly voltage fluctuation

Nippon Chemi-Con KMQ

Abstract: Nippon capacitors kmq NIPPON CAPACITORS KMQ Nippon 35B60
Contextual Info: Engineering Bulletin Tentative Downsized snap-ins, 105C Aluminum Electrolytic Capacitors No.781E / Sep.2008 @For frequently change of regenerative voltage from AC servo amplifier and inverter control @Ideal use to power supply, specially power source with turn on and off frequently and highly voltage fluctuation

EKMV401VSN101MP25S

Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Snap-ins, 105℃ KMV Series ● For frequently change of regenerative voltage from AC servo amplifier and inverter control ● Ideal use to power supply, specially power source with turn on and off frequently and highly voltage fluctuation

Contextual Info: IXA12IF1200PC preliminary I C25 = = VCES VCE sat typ = XPT IGBT Copack 20 A 1200 V 1.8 V C (2) Part number IXA12IF1200PC (G) 1 E (3) Applications: Package: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems

15A Voltage Regulators

Abstract: 2N6935 300V transistor npn 15a 2N6933 15a transistor 300V regulator 300V transistor npn 2a 2N6934
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION •High Switching Speed ·High Voltage APPLICATIONS ·Off-line power supplies ·High voltage inverters ·Switching regulators ABSOLUTE MAXIMUM RATINGS Ta=25℃

Contextual Info: TLP188 Photocouplers GaAℓAs Infrared LED & Photo Transistor TLP188 1. Applications • Programmable Logic Controllers PLCs • Air Conditioner Inverters 2. General TLP188 consists of phototransistors optically coupled to GaAℓAs infrared emitting diodes. The TLP188 is housed

2SC1106

Abstract: 2SC110 2sc1106 transistors
Contextual Info: JMnic Product Specification 2SC1106 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation ・High breakdown voltage APPLICATIONS ・For voltage regulator ,inverter and switching mode power supply applications PINNING see Fig.2

2SC1106

Abstract: Power IC
Contextual Info: SavantIC Semiconductor Product Specification 2SC1106 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications

BU920

Abstract: Designed for automotive ignition applications NPN Transistor 1A 400V npn transistor 400V Saturation npn transistors 400V 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS Ta=25℃

npn transistors 400V 1A

Abstract: Designed for automotive ignition applications Darlington NPN Silicon Diode darlington power transistor NPN Transistor 1A 400V npn transistor 400V BU920T
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS Ta=25℃

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

dc 3phase ac inverter circuit

Abstract: thyristor inverter PVD55-12 5.5KW igbt 500V 1A Gate Turn-off Thyristor 600V 20A
Contextual Info: TENTATIVE PIM MODULE PVD55 PVD55-12 5.5KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

igbt 500V 50A

Abstract: igbt 500V 1A PVD55-6 thyristor inverter
Contextual Info: TENTATIVE PIM MODULE PVD55 PVD55-6 5.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

inverter circuit dc to ac 5V to 1000V

Abstract: PVD75PVD75-12 bridge thyristor PVD75-12 IGBT 500V 50A IGBT snubber igbt 500V 1A
Contextual Info: TENTATIVE PIM MODULE PVD75PVD75-12 7.5KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 7.5kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

SAT Line Amplifier

Abstract: MJE53T
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE53T DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 350V(Min) APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well