Untitled
Abstract: No abstract text available
Text: LMH6642Q / LMH6643Q Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description Features The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA)
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LMH6642Q
LMH6643Q
130MHz,
LMH664X
130MHz)
-62dBc)
MUA08A
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Untitled
Abstract: No abstract text available
Text: NJM2719 Low Noise, High-Speed Dual Operational Amplifier •PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM2719 is a high speed voltage feedback dual operational amplifier specifically optimized for low voltage noise. Combining a voltage noise of 2.5nV/√Hz typ. at f =100kHz and
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NJM2719
NJM2719
100kHz)
100MHz,
NJM2719M
NJM2719V
NJM2719RB1
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njm2719
Abstract: pbw resistor
Text: NJM2719 Low Noise, High-Speed Dual Operational Amplifier •PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM2719 is a dual high speed voltage feedback operational amplifier specifically optimized for low voltage noise. A voltage noise specification of 2.5nV/√Hz Typ. at f =100kHz , a
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NJM2719
NJM2719
100kHz)
100MHz
NJM2719M
NJM2719V
NJM2719RB1
pbw resistor
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a64a sot23-5
Abstract: LMH6642 LMH6643 LMH6644 SOIC-14 VIP10 a64a sot23
Text: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar
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LMH6642/6643/6644
130MHz,
LMH664X
130MHz)
-62dBc)
a64a sot23-5
LMH6642
LMH6643
LMH6644
SOIC-14
VIP10
a64a sot23
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6644
Abstract: No abstract text available
Text: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar
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Original
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LMH6642/6643/6644
130MHz,
LMH664X
130MHz)
-62dBc)
6644
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Untitled
Abstract: No abstract text available
Text: PBW J GEC PLESSEY CT3193-1.4 PLANAR INSERTED FERRITE SUBSTRATES FOR MICROWAVE INTEGRATED CIRCUITS GPS have the capability to supply a variety of metalised substrates manufactured using the state-of-the-art pattern plating technique. * FILMS: ADHESION LAYER
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CT3193-1
500HMz
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2SA659
Abstract: stk1070 2sd438 EQUIVALENT Transformer MG-200 STK1070I 2SD438 pbw resistor MG-200 2SA1047 STK-1070
Text: STK1070I No.966 70W m i n AF Po w e r A m p , O u t p u t St a g e D.P.P. W i t h B u i l t - in E m i t t e r Re s i s t a n c e SANYO Features 1. Built-in emitter resistance 2. Allowable power rating of resistor is 5W min. which is capable of meeting
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STK1070I
MG-200)
STK1070H
2SA659
2SD438
stk1070
2sd438 EQUIVALENT
Transformer MG-200
STK1070I
2SD438
pbw resistor
MG-200
2SA1047
STK-1070
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STK1060I
Abstract: 2sd438 EQUIVALENT STK1060II STK1060 2Sa659 2SD438 DBA40C 2SD438F 2SA1047 MG-200
Text: STK1060I No.1093 Thick Film Hybrid Integrated C irc u it SANYO 60W m i n AF P o w e r A m p . O u t p u t S t a g e D.P.P. W i t h B u i l t - in E m i t t e r R e s i s t a n c e % Features 1. Built-in emitter resistance 2. Allowable power rating of resistor is 5W min. which is capable of meeting
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STK1060I
TK1060E
2SA659
2SCU75
2SC1570
2SD438
STK1060I
2sd438 EQUIVALENT
STK1060II
STK1060
2Sa659
2SD438
DBA40C
2SD438F
2SA1047
MG-200
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2SA1047
Abstract: 2SD438 STK10501 STK1050A 2SA659 DBA40C STK1050 2SC 1570 2sd438 EQUIVALENT MG-200
Text: No.965 n Thick Film Hybrid Integrated Circuit 50W min AF Power Amp. Output Stage D . P . P . W ith B u i l t - i n E m itte r R e s is ta n c e % SANYO S T K 1 0 5 0 Features 1. Built-in emitter resistance 2. Allowable power rating of resistor is 5W min. which is capable of meeting
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STK10501
MG-200)
STK1050Ã
2SA659
2SD438
2SA1047
STK10501
STK1050A
2SA659
DBA40C
STK1050
2SC 1570
2sd438 EQUIVALENT
MG-200
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STK1080II
Abstract: STK1080 2SA1047 STK1080-II TA 80W 2SD438 2sd438 EQUIVALENT DBA40C 2SD438F
Text: No. 1 0 9 4 S T K 1 0 8 0 II Thick Film Hybrid I n t e g r a t e d C i r c u i t 8GWm i n AF P o w e r Amp, O u t p u t S t a g e D. P . P . SANYO With B u i l t - i n Em itter R esistance Fe a t u r e s . Built-in emitter resistance. . Allowable power rating of resistor is 5W min. which is capable of meeting
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STK1080II
DBA40C
STK1080Ã
150p1
2SD438
2SA1047
STK1080II
STK1080
2SA1047
STK1080-II
TA 80W
2SD438
2sd438 EQUIVALENT
DBA40C
2SD438F
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1010I
Abstract: No abstract text available
Text: LH0086/LH0086C 2 1 National Semiconductor LH0086/LH0086C Digitally-Programmable-Gain Amplifier General Description Features The LH0086 is a self-contained, high-accuracy, digitally-programmable-gain amplifier. It consists of a FET-input opera tional amplifier, a precision resistor ladder, and a digitallyprogrammable switch network. A three-bit TTL-compatible
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LH0086/LH0086C
LH0086/LH0086C
LH0086
LH0086C
1010I
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Untitled
Abstract: No abstract text available
Text: LH0086/LH0086C National Semiconductor LH0086/LH0086C Digitally-Programmable-Gain Amplifier General Description Features The LH0086 is a self-contained, high-accuracy, digitally-programmable-gain amplifier. It consists of a FET-input opera tional amplifier, a precision resistor ladder, and a digitallyprogrammable switch network. A three-bit TTL-compatible
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LH0086/LH0086C
LH0086/LH0086C
LH0086
LH0086C
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LH0066
Abstract: LH0086 LH0086CD LH0086C LH0086D Ta-12S
Text: LH0086/LH0086C National Semiconductor LH0086/LH0086C Digitally-Programmable-Gain Amplifier General Description Features The LH0086 is a self-contained, high-accuracy, digitally-programmable-gain amplifier. It consists of a FET-input opera tional amplifier, a precision resistor ladder, and a digitallyprogrammable switch network. A three-bit TTL-compatible
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LH0086/LH0086C
LH0086
LH0086C
LH0066
LH0086CD
LH0086D
Ta-12S
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A.C.L. Mica Capacitors
Abstract: No abstract text available
Text: m CA3450 HARRIS S E M I C O N D U C T O R Video Line Driver, High Speed Operational Amplifier March 1993 Description Features • High Open Loop Gain at Video Frequencies • • • • • The CA3450* is a large signal video line driver and high - Aq l . >40dB at f a 5MHz speed operational amplifier capable of driving 50£i transmis
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CA3450
CA3450*
10MHz;
230MHz
CA3450
220MHz;
2-HP-5082-2B35
CA3318
A.C.L. Mica Capacitors
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Untitled
Abstract: No abstract text available
Text: CA3450 g HARRIS Video Line Driver, High-Speed Operational Amplifier August 1991 Features D escription • High O p e n Loop G ain at V id e o F re q u e n c ie s The CA3450* Is a large signal video line driver and high speed operational amplifier capable o f driving 5 0 0 trans
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CA3450
CA3450*
230MHz
CA3450
CA3450in
CA3450H.
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transistor K 1352
Abstract: ECG5013A ECG1352
Text: PHILIPS E C G INC 17E ECG Sem iconductors bbSBTEfl 0DGSS2Ô b ECG 1352 30 W AF PO Features • Especially designed for hi-fi stereo am plifiers • Less than 0 .2 % harm onic distortion at full p ow er level The ECG 1352 is a self-contained high power amplifier with quasi-complementary class B
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ECG13S2
DDDS23D
ECG5013A
ECQ1352
transistor K 1352
ECG5013A
ECG1352
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ECG1351
Abstract: G00522H ECG5013 ECG5013A
Text: 17E PHILIPS E C G INC ECG Se m ico n d u cto rs bbSBTEö G00522H =] ECG1351 25 W D u a l A F PO T -74 -0 5 -0 1 Features • Designed for hi-fi stereo amplifiers * Less than 0.2% harmonic distortion at full power level The ECG1351 is a self-contained high power
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G00522H
ECG1351
ECG1351
ECG5013A
ECQ1351
G00522H
ECG5013
ECG5013A
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UPC1342V
Abstract: UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 40WTHD 2SD2013 PC1342V 2SC2987 C2987
Text: N E C 6427525 N E C ELECTRONICS INC DSE D | t,427S25 GG230t,4 7 | ~ E LE CTRON IC S INC 05E 23064 D BIPOLAR ANALOG INTEGRATED CIRCUIT MP C I 3 4 2 V 7~z-7 t/t2S'-C>/ 5 0 to 1 1 0 W POWER A M P LIFIE R DRIVER DESCRIPTION ¿¿PC1342V is a integrated monolithic circuit designed for 50 W to 110 W class HiFi audio power amplifier and consists of
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427S25
GG230t
uPC1342V
D53D75
UPC1342
transistor C 2987A
transistor 2sc 4267
C1342V
40WTHD
2SD2013
PC1342V
2SC2987
C2987
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NEC varistor
Abstract: PC1342V 2SD2013 varistor SVR ayo 438 UC1342 2SA1227 2SA1631 uPC1342 2Sc4268
Text: N E C 6427525 N E C EL E CT R O N I C S ELECTRONICS INC QSE D | bMEVSSS □ □230t]4 7 | ~ INC 05E 23064 BIPOLAR ANALOG INTEGRATED C IR C U IT ¿¿PCI 342V 5 0 to 1 1 0 W P O W E R A M P L IF IE R D R IV ER D E S C R IP T IO N ¿iPC1342V is a integrated monolithic circuit designed for 50 W to 110 W class H iF i audio power amplifier and consists of
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uPC1342V
h427S2S
NEC varistor
PC1342V
2SD2013
varistor SVR
ayo 438
UC1342
2SA1227
2SA1631
uPC1342
2Sc4268
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ECG1351
Abstract: philips capacitor 35v
Text: * PHILIPS E C G INC 17E bbSBTSû 000522 4 =] ECG1351 Sem iconductors 25 W Dual A F PO T-74-05-01 Features • D e signed for hl-fl stereo am plifiers • Less than 0 .2 % harm onic distortion at full pow er level The ECG1351 is a self-contained high power
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ECG1351
T-74-05-01
ECG1351
11II1
ECQ1351
philips capacitor 35v
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8Q transistor
Abstract: ECG1352 ECG5013A
Text: 3 PHILIPS E C G INC bbSBTEô 000SE5Û b 17E ECG1352 30 W AF PO Semiconductors Features • Especially designed fo r hi-fi stereo am plifiers • Less than 0.2% harm onic distortion at full p o w e r level The ECG1352 is a self-contained high power amplifier with quasi-complementary class B
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000SS2Ã
ECG1352
T-74-05-01
ECG1352
321---------r-
D00SE31
50V6800
10V13/iF
ECG5013A
8Q transistor
ECG5013A
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5532 philips
Abstract: 5532A philips 5532 5532 1458 amplifier 5532 dual op 5532/BPA
Text: Philips S e m icond uctors M ilitary Linear P rod ucts P roduct specification Internally compensated dual low noise operational amplifier FEATURES DESCRIPTION • Small-signal bandwidth: 10MHz The 5532 Is a dual high-performance low noise operational amplifier. Compared to
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5532/5532A
10MHz
10kHz
140kHz
5532 philips
5532A
philips 5532
5532
1458 amplifier
5532 dual op
5532/BPA
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riaa preamplifier
Abstract: ne542
Text: NE542 Signetics Dual Low-Noise Preamplifier Product Specification Linear Products PIN CONFIGURATION DESCRIPTION FEATURES The NE542 is a dual preamplifier for the amplification of low level signals in appli cations requiring optimum noise perfor mance. Each of the two amplifiers is
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NE542
NE542
110dB
104dB)
104dB
riaa preamplifier
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5532 philips
Abstract: 5532 philips 5532 5532 bpa
Text: Philips Semiconductors Military Linear Products Product specification Internally compensated dual low noise operational amplifier FEATURES DESCRIPTION • Small-signal bandwidth: 10MHz The 5532 Is a dual high-performance low noise operational amplifier. Compared to
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10MHz
10kHz
140kHz
5532/5532A
711062b
5532 philips
5532
philips 5532
5532 bpa
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