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    Nexperia PBSS3515MB,315

    TRANS PNP 15V 0.5A DFN1006B-3
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    DigiKey PBSS3515MB,315 Digi-Reel 1,946
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    PBSS3515MB,315 Reel
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    Rochester Electronics PBSS3515MB,315 248,205 1
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    EBV Elektronik PBSS3515MB,315 10,000
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    Nexperia PBSS3515MB315

    Trans GP BJT PNP 15V 0.5A 590mW 3-Pin DFN-B T/R Automotive AEC-Q101
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    Verical PBSS3515MB315 228,450 12,146
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    PBSS3515MB315 17,557 12,146
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    NXP Semiconductors PBSS3515MB,315

    Trans GP BJT PNP 15V 0.5A 590mW Automotive 3-Pin DFN-B T/R
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    Verical PBSS3515MB,315 60,000 12,146
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    Rochester Electronics PBSS3515MB,315 67,662 1
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    PBSS3515MB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PBSS3515MB,315 NXP Semiconductors PBSS3515MB - 15 V, 0.5 A PNP low VCEsat (BISS) transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF

    PBSS3515MB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING CODE SMD IC

    Abstract: biss 0001 BATTERY CHARGER cutoff
    Text: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS3515MB OT883B PBSS2515MB. AEC-Q101 MARKING CODE SMD IC biss 0001 BATTERY CHARGER cutoff PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS3515MB OT883B PBSS2515MB. AEC-Q101 PDF

    BISS 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS2515MB OT883B PBSS3515MB. AEC-Q101 BISS 0001 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    TL431 SOT323

    Abstract: No abstract text available
    Text: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,


    Original     		AN11045 TL431 SOT323 PDF

    biss 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS2515MB OT883B PBSS3515MB. AEC-Q101 biss 0001 PDF