lockin amplifier
Abstract: pbs photoconductor lead selenide Model 289K 77058 70703
Text: 5.0 127 PbS @ 289K V /A -10 10 A G M E CO NS TA NT Photolithography N MI X MA D ME 2.06 (52) -11 10 PbSe @ 243K PbS @ 243K -12 6000 WAVELENGTH (nm) Fig. 1 NEP of PbS and PbSe Detectors. 1.25 (32) Dimensions in inches (mm) Excellent detectors for the 1 to 4.5 µm region
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Untitled
Abstract: No abstract text available
Text: Detector Components Part No: .550 PBS – 060 – TE2 .06 PIN OUT 1 2 3 4 5 6 7 8 .375 .5 .225 .075 1 2 3 4 COOLER - THERMISTOR THERMISTOR COOLER (+) DETECTOR DETECTOR NO CONNECT NO CONNECT Note: Dimensions in inches .017 8 7 6 5 = = = = = = = = .600 .375
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pbs photoconductor
Abstract: No abstract text available
Text: Detector Components Part No: .550 PBS – 030 – TE2 .06 PIN OUT 1 2 3 4 5 6 7 8 .375 .5 .225 .075 1 2 3 4 COOLER - THERMISTOR THERMISTOR COOLER (+) DETECTOR DETECTOR NO CONNECT NO CONNECT Note: Dimensions in inches .017 8 7 6 5 = = = = = = = = The TE cooled photodetector series
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HgCdTe
Abstract: IA-0025 IA-010 IA-020 IS-0025 IS-010 IS-020 IS-030 IS-040 InSb photodetector
Text: NIR-MIR PHOTODETECTOR COMPONENTS EOS offers a complete product line of photodetector components for the 1.0 to 5.5 micron wavelength range. The variety of detectors allows the potential user to achieve optimum performance/price for a given application. The following table is a representative list of our standard configurations. All components can be customized
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IA-0025
HgCdTe
IA-0025
IA-010
IA-020
IS-0025
IS-010
IS-020
IS-030
IS-040
InSb photodetector
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J19TE
Abstract: 33e10 PbSe Judson 45E-03 15e03 HGCDTE detector APPLICATION OF Resistance Temperature Detector 5-3CN-R01M CMAMP-TO66-PA5 J19TE2
Text: Judson Technologies J19TE PHOTOVOLTAIC MERCURY CADMIUM TELLURIDE PB 4101 February, 2004 Detector Operating Instructions Description Thermoelectric Cooler Operation J19TE Series detectors are high-quality HgCdTe photodiodes for use in the 500nm to 5.0µm range. The equivalent circuit is a photongenerated current source Iph with parallel
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J19TE
500nm
33e10
PbSe Judson
45E-03
15e03
HGCDTE detector
APPLICATION OF Resistance Temperature Detector
5-3CN-R01M
CMAMP-TO66-PA5
J19TE2
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D-22A thermistor
Abstract: No abstract text available
Text: Indium Arsenide Detectors Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.judsontechnologies.com J12 Indium Arsenide Detector Operating Notes 1.0 to 3.8 µm
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applications of jones chopper
Abstract: No abstract text available
Text: Photovoltaic Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: LASER COMPONENTS GmbH, Germany, Phone: +49 0 8142 28640, Fax: +49 (0)8142 286411, info@lasercomponents.com J19 PV MCT Detector Operating Notes (0.5 to 5.5 µm) General Figure 1
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500nm
D-82140
applications of jones chopper
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jones chopper
Abstract: mct detector 28E-10 J19TE applications of jones chopper
Text: Photovoltaic Mercury Cadmium Telluride Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
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500nm
jones chopper
mct detector
28E-10
J19TE
applications of jones chopper
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J12TE3-66D-R01M
Abstract: 28PF1 J12TE3-66D-R250U J12LD2-R250U thermistor inas CMAMP-TO66-PA5 420081 J12TE4 TAG 8142 J12-18C
Text: Indium Arsenide Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
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10001x
Abstract: Ox010 pbs photoconductor X005
Text: 6564348 NEW ENGLAND NEU ENGLAND _ 03E 0 0023 03 N.E.P. D f - U II DE I t.St=.M34fl □□□□□53 7 | ~ NEW ENGLAND PHOTOCONDUCTOR SERIES - A, B, C, F PLATE CELL PbS Electrical Type - Rm, Temp 25°C D* Pk., 750,1 x 1010 Wavelength Cut-off Microns
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---03EL
Sb434fl
10001x
Ox010
pbs photoconductor
X005
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Untitled
Abstract: No abstract text available
Text: 6564348 03E NEW ENGLAND NEW ENGLAND 00024 03 N.E.P. D T - Ml - M\ DE|bSbM34fl 0000054 T NEW ENGLAND PHOTOCONDUCTOR S ER IES AM, BM, CM, FM - HERMETICALLY SEALED PLATE CELL PbS Electrical Type - Rm, Temp 25°C D* Pk., 750,1 x 1010 Wavelength Cut-off Microns
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bSb434fl
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lead selenide
Abstract: Detectors am fuses 71180 71200 led, detector X1092
Text: bölS^? 15E D ORIEL CORP r. . 00Q40S1 LEAD SULFIDE and LEAD SELENIDE DETECTORS BIAS T h ese detectors must be biased through a load resistor, typically 1 M£2, to obtain an output signal. O ur 7 0 7 0 4 Bias • ■ ■ ■ ■ Excellent detectors for the 1-4 urn region
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dr 25 germanium diode
Abstract: thermistor inas J12-18C
Text: EGa Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 jim wavelength range. The equivalent circuit is a photon generated current source I h with parallel
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J12TE3-66S-R250U
J12TE3-66S-R01M
J12TE2-66S
J12TE3-66S
dr 25 germanium diode
thermistor inas
J12-18C
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45016m
Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Text: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.
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303Db0S
J12TE2-8B6-R01M
J12TE2-8B6-R02M
J12TE3
J12TE3-66S
J12D-M204-R01M
J12D-M204-R02M
45016m
J12-18C-R250U
J12-18C-R01M
metal detectors circuit
HgCdTe
PbSe Judson
judson PA-100
J12-18C
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HgCdTe
Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
Text: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon generated current source I h w ith parallel
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J12TE3-66S-R250U
J12TE3-66S-R01M
J12TE2-66S
J12TE3-66S
HgCdTe
PbSe Judson
detector active area size nep
fast light detector
Photodiodes Germanium
LF356
OP27
OPA111
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J12TE4-3CN-R01M
Abstract: J12TE3-66D-R01M HgCdTe J12TE2-66D-R02M J12TE1-37S-R01M J12-18C J12TE3-66D-R250U judson PA-9 J12TE3 J12TE2-66D-R01M
Text: J}^EGsG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 ¡am General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon
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J12TE2-66S
J12TE3-66S
J12TE4-3CN-R01M
J12TE3-66D-R01M
HgCdTe
J12TE2-66D-R02M
J12TE1-37S-R01M
J12-18C
J12TE3-66D-R250U
judson PA-9
J12TE3
J12TE2-66D-R01M
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J12-18C
Abstract: R/Detector/"detectors ic"/"CD"/iRAM*10up60a OP2750 J12-5A PbSe Judson thermistor inas R/Detector/"detectors ic"/"CD"/4a2d
Text: A EGæG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon
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J12TE2-66S
J12TE3-66S
30b05
J12-18C
R/Detector/"detectors ic"/"CD"/iRAM*10up60a
OP2750
J12-5A
PbSe Judson
thermistor inas
R/Detector/"detectors ic"/"CD"/4a2d
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cds photo diode
Abstract: OD44L T36 diode Photo transistor with open base automatic light control with photo diode photo sensor devices
Text: -•P R O D U C T OVERVIEW# PHOTO SENSORS PHOTO SENSORS APPLICATION NOTES Photoelectric conversion elements have the following functions. Light signal light energy <= => electrical signal (electrical energy)
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