PARTMARKING 5 C Search Results

MJ-112

Contextual Info: FMMJ111 to FMMJ113 S0T23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ111 - C11 FM M J112 - C12 FM M J113 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5 °C -3 5 V

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.

FMMT489

Abstract: FMMT549 FMMT589 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997 ✪ FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE - E C 589 FMMT489 B ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

BF620

Abstract: BF621 FMMTA42
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –

bcx5316

Abstract: BCX5616
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage

transistor 6CZ

Abstract: BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

BCW68GR

Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

fzt855

Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -

J5486

Abstract: fmmj5484
Contextual Info: FMMJ5484 to FMMJ5486 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J5484 - H84 FM M J5485 - H85 FM M J5486 - H86 APPLICATION AREAS: * VHF/UHF AMPLIFIERS ABSOLUTE MAXIMUM RATINGS at Tamb= 2 5°C -2 5 V Gate Drain or G ate-S ource V oltag e Notes

FZT855

Abstract: FZT955 PARTMARKING at sot223 sot223 transistor high performance transistor DSA003717
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * C Very low saturation voltage Excellent hFE specified up to 10 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE -

FMMD914

Contextual Info: PAGE NUMBER SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD914 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL - 5D AL 3 5 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT W orking Peak Reverse Voltage V rw m 75 V Average Rectified Forward Current at

ir10 diode

Abstract: diode IR10 FMMD7000 FMMD6050
Contextual Info: PAGE NUMBER SOT23 SILICON PLANAR HIGH SPEED FMMD6050 SWrrCHING DIODE ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL - 5A AL 3 5 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE UNIT V BR 70 V Peak Forward Current If 200 mA Peak Forward Surge Current

zc sot23

Abstract: ZC2810E
Contextual Info: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT

VN10LFTA

Abstract: VN10L
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

Contextual Info: BCV71 BCV72 S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR PARTMARKING DETAILS: BVC71 - K7 BCV72 - K8 BCV71R - K6 BCV72R - K9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 80 V V CEO 60 V V EBO 5 V 200 mA PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

J202 equivalent

Contextual Info: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current

MV SOT23

Abstract: BS170F ZVN3306F
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

vn10lf

Abstract: ZVN3306F DSS SOT23 D200M DSA003721
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

MV SOT23

Abstract: BS170F mv BS170F DSS SOT23 ZVN3306F DSA003678
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

partmarking 5 C

Abstract: ZUMD54 ZUMD54C DSA003730
Contextual Info: SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ZUMD54 ZUMD54C ISSUE 1– DECEMBER 1998  1 1 3 2 3 ! SINGLE COMMON CATHODE Device Type: ZUMD54 Device Type: ZUMD54C Partmarking Detail: D8 Partmarking Detail: D8C FEATURES: Low VF & High Current Capability

Contextual Info: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012

FMMT4403

Abstract: FMMT4402 DSA003694
Contextual Info: FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) 255 ns VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2)