PARTMARKING 1F Search Results

FMMT5401

Abstract: FMMT5550 FMMT5551 FMMT5400
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMT5550 FMMT5551 ISSUE 4 - NOVEMBER 1996 ✪ PARTMARKING DETAILS - COMPLEMENTARY TYPES - FMMT5550 – 1FZ FMMT5551 – ZG1 E C FMMT5550 – FMMT5400 FMMT5551 – FMMT5401 B ABSOLUTE MAXIMUM RATINGS. PARAMETER

B 660 TG

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS

FMMT5551

Contextual Info: FM M T5550 FMMT5551 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTO RS PARTMARKING DETAILS: FM M T 5550 - 1F FMMT5551 - G1 ABSOLUTE M AXIMUM RATINGS PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

BC848 equivalent

Abstract: bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C
Contextual Info: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846A–Z1A BC848B–1K BC846 BC856 BC846B–1B BC848C–Z1L BC847 BC857 BC847A–Z1E BC849B–2B BC848 BC858 BC847B–1F

FZT869

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 - ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m ii at 5A * * * 7 Amp continuous collector current (20 Amp peak) Very low saturation voltages

Contextual Info: g § "\ HIGH-SPEED y 2K X 8 FOURPORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • High-speed access — Military: 35/45ns max. — Com mercial: 25/35/45ns (max.) • Low-power operation — IDT7052S Active: 750m W (typ.) Standby: 10m W (typ.)

Contextual Info: HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70927S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous access of the sam e m em ory location • H igh-speed clock to data access

Contextual Info: HIGH-SPEED 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70908S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous access of the sam e m em ory location • H igh-speed clock to data access

3742DM

Contextual Info: HIGH-SPEED 2K X 16 DUAL-PORT STATIC RAM PRELIMINARY IDT71V33S/L IDT71V43S/L Integrated Device Technology, Inc. FEATURES: • High-speed access — Commercial: 25/35/55ns max. • Low-power operation — IDT71V33/43S Active: 750 mW (typ.) Standby: 3.3mW (typ.)

Contextual Info: HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70927S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported m em ory cells w hich allow sim ulta­ neous access of the sam e m em ory location • H igh-speed clock to data access

SEM t11

Abstract: A12L A13L IDT70V639 IDT70V639S 70V639S10
Contextual Info: PRELIMINARY IDT70V639S HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.

Contextual Info: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

A12L

Abstract: IDT70V639 IDT70V639S 70V639S12 D 5621
Contextual Info: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM Š IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)

5652

Contextual Info: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

Contextual Info: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)

Contextual Info: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

70V659

Abstract: A12L IDT70V659 IDT70V659S 70V659S15
Contextual Info: PRELIMINARY IDT70V659S HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.

5652

Abstract: IDT70T3319 IDT70T3399
Contextual Info: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

70V659S12

Abstract: 70V659 A12L IDT70V659 IDT70V659S
Contextual Info: PRELIMINARY IDT70V659S HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.

Contextual Info: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)

IDT70T3319

Abstract: IDT70T3399
Contextual Info: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

A12L

Abstract: A13L IDT70V639 IDT70V639S
Contextual Info: HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.

Contextual Info: Š HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM IDT70V639S Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max. – Industrial: 12/15ns (max.)