laser DFB 1550nm 10mW
Abstract: VCSEL array, 850nm TOSA pcb 850nm VCSEL application laser DFB 1550nm 10mW single 1550nm laser diode for 10Gbps 1550nm optical detector 10Gbps LC TOSA wiggle LC-TOSA SFP 10gbps
Text: DATA SHEET 1/2/4/8 GBPS 850NM VCSEL LC TOSA PACKAGES HFE7192-XXX FEATURES: LC TOSA HFE7192-x6x includes flex circuit LC TOSA HFE7192-x8x leaded package High performance VCSEL Low electrical parasitic TO package The HFE7192-xxx uses a high-performance Vertical Cavity Surface Emitting
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850NM
HFE7192-XXX
HFE7192-x6x
HFE7192-x8x
HFE7192-xxx
1-866-MY-VCSEL
laser DFB 1550nm 10mW
VCSEL array, 850nm
TOSA pcb
850nm VCSEL application
laser DFB 1550nm 10mW single
1550nm laser diode for 10Gbps
1550nm optical detector 10Gbps
LC TOSA wiggle
LC-TOSA
SFP 10gbps
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Untitled
Abstract: No abstract text available
Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o ) r
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ESM6045AV
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Untitled
Abstract: No abstract text available
Text: Very Wideband ADCH-80+ ADCH-80 RF Choke 50Ω 50 to 10000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C DC Current 250 mA • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 800 ohm typ.
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ADCH-80+
ADCH-80
CD542
2002/95/EC)
0DCH-80
ADCH-80
TB-52
PL-210)
M98898
ED-7562/2
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PNP Monolithic Transistor Pair
Abstract: No abstract text available
Text: LS3550C MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS3550C is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
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LS3550C
PNP Monolithic Transistor Pair
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ZO 109
Abstract: zo 109 MA
Text: Very Wideband ADCH-80A+ ADCH-80A RF Choke 50Ω 50 to 10000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C DC Current 250 mA CASE STYLE: CD542 PRICE: $2.75 ea. QTY. 10-49 • low parasitic capacitance 0.1 pf typ.
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ADCH-80A+
ADCH-80A
CD542
2002/95/EC)
TB-113
PL-026)
M102713
ED-8059
ADCH-80A
ZO 109
zo 109 MA
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Untitled
Abstract: No abstract text available
Text: Very Wideband ADCH-80A+ ADCH-80A RF Choke 50Ω 50 to 10000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C DC Current 250 mA • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 800 ohm typ.
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ADCH-80A+
ADCH-80A
CD542
2002/95/EC)
TB-113
PL-026)
M98898
ED-8059
ADCH-80A
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Untitled
Abstract: No abstract text available
Text: LS131 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems replaces discontinued Intersil IT131 The LS131 is a monolithic pair of PNP transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
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LS131
IT131
IT131.
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LS122
Abstract: dual NPN Transistor
Text: LS122 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT122 The LS122 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
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LS122
IT122
IT122.
LS122
dual NPN Transistor
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IT122
Abstract: No abstract text available
Text: IT122 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT122 The IT122 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
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IT122
IT122
IT122.
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Untitled
Abstract: No abstract text available
Text: LS3250A MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS3250A is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications.
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LS3250A
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Untitled
Abstract: No abstract text available
Text: LS120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The LS120 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
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LS120
IT120
OT-23
IT120.
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Untitled
Abstract: No abstract text available
Text: LS310 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS310 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
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LS310
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MPC8300
Abstract: MPC8001-MPC8100 MPC8000 mpc8001
Text: MPC8001-MPC8100 PASSIVE DEVICES – MMSM Capacitors ® TM RoHS COMPLAINT KEY FEATURES DESCRIPTION • Low parasitics LP = 0.02nH Typical CP = 0.04pF Typical • Surface Mount design Broadband Performance through X-Band Available on Tape & Reel or on
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MPC8001-MPC8100
MPC8000
MPC8010
MPC8020
MPC8050
MPC8100
MPC8300
MPC8300
MPC8001-MPC8100
mpc8001
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Internal MLCC cracking result serious failure mode
Abstract: capacitor 47 nano X7R CAPACITORS color code
Text: Low Inductance Capacitors Introduction Multiple terminations of a capacitor will also help in reducing the parasitic inductance of the device. The IDC is such a device. By terminating one capacitor with 8 connections the ESL can be reduced even further. The measured inductance
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 10GBPS 850NM VCSEL LC AND SC TOSA PACKAGE HFE6X9X-56X FEATURES: LC TOSA HFE619x-56x SC TOSA HFE639x-56x High performance VCSEL Low electrical parasitic TO package with flexible interface Data rates from DC to 12.5Gbps Differential, Cathode or Anode
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10GBPS
850NM
HFE6X9X-56X
HFE619x-56x
HFE639x-56x
HFE6x9x-56x
1-866-MY-VCSEL
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 10GBPS 850NM VCSEL LC TOSA PACKAGE SFP+ APPLICATIONS HFE6192-X61 FEATURES: HFE6192-261 normal polarity HFE6192-361 inverted polarity High performance VCSEL Low electrical parasitic TO package with flexible interface Data rates from DC to 12.5Gbps
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10GBPS
850NM
HFE6192-X61
HFE6192-261
HFE6192-361
HFE6192-x61
1-866-MY-VCSEL
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Untitled
Abstract: No abstract text available
Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm PIN + Preamp LC ROSA Package Preliminary HFD3180-108 Key Features: LC ROSA High performance GaAs PIN photodiode with separate transimpedance amplifier Low electrical parasitic TO46 package
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850nm
HFD3180-108
155Mbps
HFD3180-108
850nm.
1-866-MY-VCSEL
1-866-MY-VCSEL
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diode ct12
Abstract: MA46583 MA46582 ma46580
Text: Beam Lead Constant Gamma GaAs Tuning Varactors MA46580 thru 589 Series V3.00 Features ● ● ● ● ● ● ● Case Style 992 Gamma of 1.0 and 1.25 Available Constant Gamma for Linear Tuning Strong Beam Construction Low Parasitic Capacitance High Q Close Capacitance Tracking
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MA46580
diode ct12
MA46583
MA46582
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Schottky diode wafer
Abstract: No abstract text available
Text: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs
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MA40278,
MA40279
Schottky diode wafer
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2N5911
Abstract: No abstract text available
Text: 2N5911 SERIES N-Channel JFET Pairs C T S ificon ix incorporated The 2N5911 Series are JFET matched pairs mounted in a single TO-78 package. Ttiis two-chip design reduces parasitic performance at high-frequency while ensuring extremely tight matching. The 2N5911 features high
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2N5911
2N5912
MIL-S-19500.
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10 GHz gunn diode
Abstract: millimeter gunn diode
Text: AFC378 G aAs FLIP CHIP S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz typ. . Low capacitance : CT0 = 0.032 pF Extremely rugged. Passivated planar construction. High reproducibility of parasitics. A P PL IC A TI O N S
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AFC378
94GHz
26-110GHz)
AFC378
10 GHz gunn diode
millimeter gunn diode
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Untitled
Abstract: No abstract text available
Text: NCBD1 DIE N-Channel JFET Pair CT*S ilico n ix JL w The NCBD1 Die is a matched pair of JFETs. This two-chip design reduces parasitic performance at high frequency while ensuring extremely tight matching. The die features high breakdown voltage V(br gss typically
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MIL-STD-750C,
2N5566
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314 optocoupler
Abstract: tk75002 CHARACTERISTICS DIODE tl431 tl431 CONSTANT CURRENT 6 pin pulse transformer Pulse Amplitude Modulator Opt pam circuit phase shifter transformer Tl431 as optocoupler driver
Text: TK75002 Power Conversion ICs ERROR SIGNAL ISOLATOR FEATURES APPLICATIONS • Eliminates Opto-Coupler from Feedback Loop ■ Power Supplies with Primary-Side Controller ■ Replaces TL431 and Eliminates Parasitic Zero ■ Low Isolation-Barrier Capacitance Equipment
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TK75002
TL431
OT-89-5
TK75002
TK75002.
TK75001.
15voltstoturnontheTK75001.
314 optocoupler
CHARACTERISTICS DIODE tl431
tl431 CONSTANT CURRENT
6 pin pulse transformer
Pulse Amplitude Modulator
Opt pam circuit
phase shifter transformer
Tl431 as optocoupler driver
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Untitled
Abstract: No abstract text available
Text: mÊÈKSr Thin Film Chip Resistor Networks RN 1632 Series 1.0 Application These 1206 chip resistor networks are available with either 2 or 3 resistors, and offer better perfor mance than SIP networks. The surface mount package allows for less parasitic capacitance/induc
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RN1632A
RN1632B
RN1632C
25ppm
10ppm
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