PARAMETER EM 235 Search Results

em 329

Contextual Info: S EM ICOND UCTOR 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators SURFACE MOUNT LL34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units

Contextual Info: W F^ M TR O N FM1808SFRAM Memory ^ Features • 256K Nonvolatile Ferroelectric RAM Organized as 32,768 words x 8 bits ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation - 150ns Read Access - 235ns Read/Write Cycle Time

K2358

Abstract: AK2358 112KHz AK2358A AUP2 Analog Voice scrambler
Contextual Info: ASAHI □ □ □ □ O □ KASEI [AK 235 8] Built-in voice filter for cordless telephone. MSK MODEM 2400bps , COMPANDOR, and scrambler circuit . Low / wide operation voltage range (1.9 V to 5.5V) Built-in COMPANDOR output transient response circuit and time constant circuit

Contextual Info: CY7C1388 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • Single 3 3 ± 0.3V power supply • High speed — 20 ns • Low active power — 235 m W • Low standby power — 90 mW • 2.0V data retention — 100 iW • Ideal for low-voltage cache memory

AIR FLOW DETECTOR

Abstract: temperature sensor lm 125 RETS135H 50 k thermo pot air flow detector sensor LM33S LM336 application note LM135H-MIL LM308 HEATER, to-92
Contextual Info: LM135/LM235/LM335, LM135A/LM235A/LM335A N a t i o n a l S e m i c o n d u c t o r LM 135/LM 235/LM335, LM 135A/LM235A/LM335A Precision Temperature Sensors G eneral Description The LM135 series are precision, easily-calibrated, integrat­ ed circuit temperature sensors. Operating as a 2-terminal

photo electric smoke DETECTOR CIRCUIT DIAGRAM

Abstract: CIRCUIT OF SMOKE ALARM WITH PHOTODIODE CS-235 CS-235DW18 CS-235N18 alarm system with constant current source synchronous detector reference voltage
Contextual Info: System Photoelectric Sm oke Detector D escription The CS-235 System Sm oke Detector is a photo electric type w ith a p ulsed infrared LED as the light source an d a silicon p hotodiode as the light detector. The CS-235 IC, along w ith passive external com po­

microwave transistor 03

Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
Contextual Info: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS

MB98802

Abstract: MB98802RC
Contextual Info: 235348530123234800532348902389534853 CMOS 64K -B IT F U J IT S U EEPROM CARD MB98802RC F e b ru a ry 191 E d itio n 1 .0 CMOS 64K 65,536 -BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD The M B98802 is a m em ory card w hich is composed o f one MBM28C64

LAE4001R

Abstract: SC15 MGL069
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 PACKAGE DIMENSIONS DESCRIPTION The QSD733 is a silicon photodarlington encapsulated in an infrared transparent, black TO-18 package. U - .190 4.83 ^1 .178(4.62) V .235 (5.97) .218(5.54) T 0.030(0.76) NOM

W2N marking

Abstract: power supply ps 3003
Contextual Info: T EM I C Semiconductors Document number MHS/SCC 021 Date Issue 23/12/1999 Rev C Rev C 1 /42 PROJECT SPACE GENERAL TITLE INTEGRATED CIRCUIT, SILICON MONOLITHIC CMOS 16 BITS ERROR DETECTION AND CORRECTION UNIT BASED ON TYPE 29C516 E Page 1 T EM I C Document number

BLS3135-20

Abstract: microwave transistor 03 SOT422A sot422
Contextual Info: DISCRETE SEMICONDUCTORS 0ÂTÂ Sin] H T BLS3135-20 Microwave power transistor Product specification Philips Sem iconductors 2000 Feb 01 PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • S uitable fo r short and m edium pulse applications

sft 243 ba

Abstract: MSM65511RS vibrator
Contextual Info: O K I Semiconductor M S M 65511_ High-Performance CMOS 8-Bit Single-Chip Microcontroller DESCRIPTION The MSM 65511 is a high perform ance 8-bit single chip m icrocontroller im plem enting large integra­ tion, high speed and low power consumption by O KI's n X -8 /5 0 CPU core. W ith a m inim um instruc­

s3331

Contextual Info: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors

Contextual Info: [sö PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 Th e Q S D 733 is a silicon photodarlington en capsulated in an infrared transparent, black T O -18 package. R E FER ENC E SURFACE FEA TU RES V .235 5.97 .218(5.54) OR A N G E STR IPE Steel lead fram es for im proved reliability in solder

MC10131

Abstract: mc10h131 ecl10k Lpel ECL10KH 10131 motorola MC10H131J
Contextual Info: ECL 10KH High-Speed Em itter-Coupled Logic Fam ily MC10H131 Dual M aster-Slave Type D Flip-Flop Features/ Benefits Ordering Information • Propagation delay, 1 ns typical PART NUMBER PACKAGE TEMPERATURE MC10H131 J,N,NL 20 Com • Power dissipation, 235 mW typical

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4123 Read-only UHF RFID IC Description Features • Factory programmed 64 bit ID number • High data rate: Up to 256 kbit/s  Frequency independent: Typically used at 869 MHz, 902 - 960 MHz versions 001 to 099  On-chip oscillator

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4123 Read-only UHF RFID IC Description Features • Factory programmed 64 bit ID number • High data rate: Up to 256 kbit/s  Frequency independent: Typically used at 869 MHz, 902 - 960 MHz versions 001 to 099  On-chip oscillator

2242B

Abstract: DXU working
Contextual Info: P A I R C H I I - D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm TMC2302A Image Manipulation Sequencer 40 M H z • A synchronous loading o f control param eters • R apid 25ns per pixel rotation, w arping, panning, and scaling o f im ages

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4123 Read-only UHF RFID IC Description The chip is used in passive UHF read-only transponder applications. It is powered up by an RF beam transmitted by the reader, which is received and rectified to generate a supply voltage for the chip.

K9520-55

Abstract: k952
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor