PARALLEL OPERATION OF POWER MOSFETS Search Results

AN918 MOTOROLA

Abstract: AN-918 AN9320 General Electric SCR Manual 6th edition TA84-5 SCR Handbook, General electric AN918 Paralleling Power MOSFETs in Switching Applications Rudy Severns 1/AN918 MOTOROLA "scr manual"
Contextual Info: Parallel Operation Of Semiconductor Switches Application Note June 1993 Figure 1 . The dynamic area is only a fraction of the total waveform, but it is by far the most important when it comes to parallel operation. In uninterruptable power supplies demands for current handling capability to meet load current In uninterruptable power

IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but

Siliconix Handbook

Abstract: General Electric SCR Manual 6th edition "General Electric SCR Manual" 6th AN918 MOTOROLA Rudy Severns TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications Severns SCR Manual paralleling mosfet
Contextual Info: Parallel Operation Of Semiconductor Switches Application Note /Title AN75 3 Subect Paralel peraion Of emionuctor witch ) Autho ) Keyords Interil orpoation, emionuctor, vaanche nergy ated, witch ng ower uplie , ower witch ng June 1993 In uninterruptable power supplies demands for current handling capability to meet load current In uninterruptable power

"General Electric SCR Manual" 6th

Abstract: General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
Contextual Info: Harris Semiconductor No. AN9320 Harris Power June 1993 Parallel Operation Of Semiconductor Switches Author: Sebald R. Korn, Consulting Applications Engineer In uninterruptable power supplies demands for current handling capability to meet load current requirements plus margins for overload and reliability purposes often exceed the

DE275X2-501N16A

Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

DE275X2-102N06A

Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
Contextual Info: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

DE275X2-102N06A

Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
Contextual Info: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

AN2842

Abstract: parallel connection of MOSFETs how mosfets connect parallel parallel mosfet
Contextual Info: AN2842 Application note Paralleling of power MOSFETs in PFC topology Introduction The current handling capability demands on power supply systems to meet high load current requirements and provide greater margins for overload and reliability, often exceed

Contextual Info: Enpirion Power Datasheet EN6360QI 8A PowerSoC Highly Integrated Synchronous DC-DC Buck with Integrated Inductor Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs

Contextual Info: Enpirion Power Datasheet EN6360QI 8A PowerSoC Highly Integrated Synchronous DC-DC Buck with Integrated Inductor Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs

EN6360

Abstract: EN6360QI
Contextual Info: EN6360QI 8A Synchronous Highly Integrated DC-DC PowerSoC Description Features The EN6360QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and compensation to provide the smallest solution size in

GRM31CR61A476ME19L

Abstract: EN63A0QI EN63A0 0600V EN63
Contextual Info: EN63A0QI 12A Synchronous Highly Integrated DC-DC PowerSoC Description Features The EN63A0QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and compensation to provide the smallest solution size in

EN63A0QI

Contextual Info: Enpirion Power Datasheet EN63A0QI 12A PowerSoC Highly Integrated Synchronous Buck With Integrated Inductor Description Features The EN63A0QI is a Power System on a Chip PowerSoC DC to DC converter with an integrated inductor, PWM controller, MOSFETs and

ZM12

Contextual Info: YR80.241 24-28V, 80A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ For N+1 and 1+1 Redundant Systems Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes Only 50mV Voltage Drop at 40A Output Current

parallel connection of MOSFETs

Abstract: IRF130 Mosfet application driver circuit MOSFET dynamic parameters
Contextual Info: Requirements for Power MOSFETs Connected in Parallel 1 Introduction and Objectives For the field of applications for power FETs to be expanded, e.g. in arc welding equipment, as a substitute switching relay, in uninterruptible power supplies and in motor controllers, it

AN941

Abstract: IRF1404 FET IRF1404 FET model parallel MOSFET Transistors parallel connection of MOSFETs Measurement of stray inductance Analysis of Avalanche Behaviour for Paralleled MOSFETs
Contextual Info: Analysis of Avalanche Behaviour for Paralleled MOSFETs By Jingdong Chen, Scott Downer and Anthony Murray and David Divins International Rectifier Co. 222 Kansas Street, El Segundo, CA 90245 As presented at SAE World Congress 2004 I: Abstract: In this study, an avalanche extension to existing

DRV8402

Abstract: snubber full bridge
Contextual Info: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)

DRV8402

Contextual Info: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)

DRV8402

Contextual Info: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)

DRV8402

Contextual Info: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)

IXAN0068

Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
Contextual Info: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability

DRV8402

Contextual Info: Not Recommended for New Designs DRV8402 SLES222 – FEBRUARY 2009 www.ti.com Dual Full Bridge PWM Motor Driver Check for Samples: DRV8402 FEATURES 1 • • • • • • • • • • High-Efficiency Power Stage up to 96% with Low RDS(on) MOSFETs (80 mΩ at TJ = 25°C)

NTD12N10

Abstract: IRF530 AND8199 HUF75631SK8 Bipolar Junction Transistor
Contextual Info: AND8199 Thermal Stability of MOSFETs Prepared by: Alan Ball ON Semiconductor Application Engineering Manager http://onsemi.com ID, DRAIN CURRENT A 24 the same application of the positive temperature coefficient applies. In this case, the thermal path between the cells is