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    PARALLEL MOSFET TRANSISTORS Search Results

    PARALLEL MOSFET TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPN4800CQH Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation

    PARALLEL MOSFET TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IBJT

    Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
    Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but


    Original     		AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module OUT Features • - S1 Q2 G2 S2 0/VBUS  Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF


    Original     		APTC80AM75SCG PDF

    APT0405

    Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
    Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.


    Original     		APT0405 APT0405 TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG PDF

    led driver mosfet SOT23 6pin

    Abstract: MTD6N15 Q100 SDE06A
    Text: SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that


    Original     		SM74101 SM74101 led driver mosfet SOT23 6pin MTD6N15 Q100 SDE06A PDF

    parallel mosfet

    Abstract: MOSFET RK7002 parallel MOSFET Transistors "N-Channel MOSFET" mosfet ratings mosfet specification mosfet datasheet n-channel mosfet transistor specifications of MOSFET
    Text: Transistors Interface and switching 60V, 115mA RK7002 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-channel MOSFET


    Original     		115mA) RK7002 parallel mosfet MOSFET RK7002 parallel MOSFET Transistors "N-Channel MOSFET" mosfet ratings mosfet specification mosfet datasheet n-channel mosfet transistor specifications of MOSFET PDF

    RK7002

    Abstract: No abstract text available
    Text: Transistors Interface and switching 60V, 115mA RK7002 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-channel MOSFET


    Original     		115mA) RK7002 RK7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 2A 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2463 PDF

    2SK2503

    Abstract: 2A 500V MOSFET 500v 2A mosfet transistors mosfet 500v 2A 100V 8A N-Channel MOSFET
    Text: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2094 2SK2503 2SK2504 2SK2503 2A 500V MOSFET 500v 2A mosfet transistors mosfet 500v 2A 100V 8A N-Channel MOSFET PDF

    mosfet

    Abstract: 2SK2094
    Text: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2094 mosfet 2SK2094 PDF

    2SK2504

    Abstract: mosfet mosfet 5a parallel mosfet
    Text: Transistors Small switching 100V, 5A 2SK2504 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2504 2SK2504 mosfet mosfet 5a parallel mosfet PDF

    mosfet

    Abstract: 2SK2463
    Text: Transistors Small switching 60V, 2A 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2463 mosfet 2SK2463 PDF

    2SK2094

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2094 2SK2094 PDF

    RK3055E

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 8A RK3055E FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET


    Original     		RK3055E RK3055E PDF

    2SK2504

    Abstract: No abstract text available
    Text: Transistors Small switching 100V, 5A 2SK2504 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET


    Original     		2SK2504 2SK2504 PDF

    mosfet low vgs

    Abstract: parallel mosfet mosfet n mosfet low vgs 2SK2095N parallel MOSFET Transistors
    Text: Transistors Small switching 60V, 10A 2SK2095N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C)


    Original     		2SK2095N mosfet low vgs parallel mosfet mosfet n mosfet low vgs 2SK2095N parallel MOSFET Transistors PDF

    2SK2095N

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 10A 2SK2095N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C)


    Original     		2SK2095N 2SK2095N PDF

    SMBJ5A

    Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
    Text: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage


    Original     		ST1284 RS232 DDR110 PowerSO-10, ISOWATT218, SMBJ5A irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928 PDF

    2SK2041

    Abstract: No abstract text available
    Text: 2SK2041 Silicon N-channel MOSFET Features Dimensions Units : mm available in PSD package 2SA2041 (PSD) low on-resistance fast switching speed wide SOA (Safe Operating Area) low logic level drive requirements simple drive requirements Tnr easy to parallel


    OCR Scan     		2SK2041 2SA2041 2SK2041 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC60AM18SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 G1 Features • CoolMOS - Ultra low RDSon - Low Miller capacitance


    Original     		APTC60AM18SCG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290m max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies


    Original     		APTC80H29SCTG PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies


    Original     		APTC60HM45SCTG PDF

    APT0406

    Abstract: APT0501 APT0502 APTC80H29SCTG DIODE S4 75a 75AVGS
    Text: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC80H29SCTG induct400 APT0406 APT0501 APT0502 APTC80H29SCTG DIODE S4 75a 75AVGS PDF

    Untitled

    Abstract: No abstract text available
    Text: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC90H12SCTG PDF

    APT0406

    Abstract: APT0501 APT0502 APTC60HM70SCTG
    Text: APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTC60HM70SCTG APT0406 APT0501 APT0502 APTC60HM70SCTG PDF