PANASONIC CE EB Search Results

Contextual Info: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity : I Ce l = 3-5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing am bient light noise • Peak sensitivity w avelength matched with infrared light emitting

Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor Unit : mm For optical control systems • Features • H ig h sensitivity : I Ce l = 3-5 m A (m in.) (at L = 500 lx) • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 5 jlls (typ.)

SC-71

Abstract: 2SB1264 2SD662
Contextual Info: Panasonic 2SB1264 -> ' a > PNP x f v 7 n>-f \s- i-M 13 >~fl) *>2V 2SD662 mm 9* a • a U 9 9 •X 5 y £ f l t J E V CE O #rÜÏ'''< mim±ÎÈtë Ta=25°C) Item a V ÿ 9 xi/ÿ ÿ * HJEE y ÿ x * -, * . -£ À , n ^ « 1 ' wiït 3 i / ^ • B fê-«® *

N12111

Abstract: ir 9214 TP 9212 F 9214 9218 9214
Contextual Info: Transistors with built-in Resistor UN9211 / 921 E/921 F/921 K/921 L/UNR921 M/921 N/921AJ/921BJ/921CJ Silicon NPN epitaxial planer transistor U nit: mm For digital circuits • Features • Costs can be reduced through downsizing of the equipment and

PANASONIC 411

Abstract: PANASONIC FJS PN111W PN115 Sift40
Contextual Info: PANASONIC INDL/ELEK-CSENI} 72C D | 1^32054 DOCHúTñ E | _ 6912852 PANASONIC INDL*ELECTRONIC 72C 0 9 8 7 8 D * ' PN110 PNI 1 0 T-Ht-<el '> ij z i y N PN / S i NPN Phototransistor Optical Control Systems • ^ /F e a tu r e s • ¡85¡ S it : ,/H ig h sen sitivity

09874

Abstract: panasonic fk PN107F PN108CL PN108F 60N40 0F83 JW Electronic Systems
Contextual Info: - PANASONIC INDL/ELEK-CSEMI} 72C D | 1,132054 0001073 3 6932852 PANASONIC INDLtELECTRONIC VOT'JWX ?2C 09873 * PN107F, PN108F PN 107F, PN108F '> U zi y NPN 7^ h Y =7 T-4I-W / S i NPN Phototransistors &SBfc$üffll$H!§ffl,/For Optical Control Systems • PN 107 F

Contextual Info: PANASONIC INDL/ELEK -CIC3- 72 6932852 PANASONIC INOLfELECTRONIC D E I b *132052 OODflSn T 72C 08599 0 T-P&ZT fl\l AN 90 B 00/A N 90 BOOS Series |C A N 90B00/A N 90B00S Series 7s9 ~F\s-4/"Transistor h7 Arrays • 9t II Unit mm AN90B00 Series Y ÿ 's ;s Ä 9 T i " AN90B00/ÄN90BOOS -> > - X l i , 8 f i '

2SD804

Abstract: 2SB747 2SD803 2SD812
Contextual Info: P A N A S O N I C IN] L/ELEK{SEni> 72C D | t,^32flS4 □ 0 0 c13c17 fl | ~ D f . 3 y. * 2SD803 = 5 y V 7 ,5 > h 2SD803 v - 1) If M / S i N P N Diffused Junction M esa NPN Power Amplifier • $$ ^¡[/F eatures • i£WcWi&S-*}-ffiSkcotzfr&£M1¥ffiM ASO) W id e a r e a o f sa fe o p e ra tio n re a liz e d by d iffu sed ju n c tio n m e s a s tru c tu re .

AN90B21

Abstract: AN90B10 AN90B20 AN90B22 AN90B01S AN90B60 AN90B00 AN90B00S AN90B20S SO-16D
Contextual Info: Panasonic Others AN90B00/AN90B00S Series Transistor Arrays AN90B00 Series • Overview T he transistor array, the AN9QB0Q and the AN90B00S series, includes the circuits with eight transistors connect­ ed in e m itte r-c o m m o n s ty le s e v e n tra n s is to rs in

Panasonic MARKING chart

Contextual Info: Panasonic Composite Transistors XN04A88 Silicon NPN epitaxial planer transistor T ri Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For am plification of low freq ue n cy output • Features • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half.

2SD772

Abstract: OU99 2SD792 2SD772A 2SD772B LI-08
Contextual Info: PANASONIC INDL/ELEK-CSEÍ1I} 7SC D | 1^32054 □ □□cí3,í2 l i 69328 52 PANASONIC INDL * ELECTRON IC * 72C 0 9 39 2 D T'ì?-« 2SD772, 2SD772A, 2SD772B 2SD772, 2SD 772A, 2SD772B '> U =3 > N P N N P N Triple Diffused Planar Ì Ì S f f l/A F Power Amplifier

2SC2851

Abstract: Panasonic 2SC2851 2SC2845
Contextual Info: PANASONIC INDL/ELEK-CSEni} 7EC D | ^ 3 2 0 5 4 □□□C]SÔE S h T - 37 - / 7 '_2SC2845 2SC 2845 j~ fîZ /Si N P N Epitaxial Planar '> U zi > N P N x t f £ U H F w i Ê i t i l f i t l L o w - n o i s e Am plifier • Ü t/F e a tu r e s

ICE PN-27724

Abstract: N9010 PN103 R9010 glass lens phototransistor PNI06
Contextual Info: PANASONIC INDL/ELEKÍSEÍ1I} 7EC D | 1^35054 □ □CHflbM 5 |~~_ 6 9 3 2 8 5 2 PANASONIC INDL*ELECTRONIC 72C 0 9 8 6 4 7r^hX b^hD PNI 02 T- Hl- PNI 02 '> U a > N P N & h h 7 / Si N P N Phototransistor # ^ S U Í ® ^ flffl// For Optical Control Systems

AN90B21

Abstract: AN90B20 AN90B00 AN90B00S AN90B01S AN90B10 AN90B22 AN90B60 GND01 DIL 18
Contextual Info: PANASONIC INDL/ELEK -CIC3- 72 DE I b *132052 OdDAS'H T 69 32 85 2 PANASONIC I N OL fE L E C TR ON IC 72C 08599 T-P&ZT f AN 90 BOO /A N 90 BOOS Series m IC A N 9 0 B 0 0 AN 90B0Q S Series h *7 > ^ 7s 9 ~F \ s 4 /" T ra n s is to r A rra y s AN90B00/ ÁN90B00S ^ '} - X l ì , 8

2856K

Abstract: PN107F PN108F LX80A
Contextual Info: Panasonic Phototransistors PN107F, PN108F Silicon N P N Phototransistors For o ptical control system s • Features • • • • • Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 J,s (typ.

y9w marking

Abstract: 2SB751 2SB759A 2SD837 2SB759 2sd837a 2SB751A ULN pnp vc2545 Si PNP Epitaxial Planar Darlington
Contextual Info: PANASONIC INDL/ELEK-CSENI} h ^ y V T S _ 7SC D | bT3 2 flS4 " 7 ^ 3 3 > T L e7 □ □□flat.D □ 2SB751, 2SB751A 2SB751, 2SB751A > ij =i v P N P x UV h Si P N P Epitaxial Planar Darlington JbZ fi'— i-J& jr— i&mi&WtlMtyi f f l / A F Power Amplifier

smd transistor A7p

Abstract: PN101 PN101F PN102F
Contextual Info: Panasonic Phototransistors PN101F, PN102F Silicon NPN Phototransistors For optical control systems • Features • F la t w in d o w design w h ich is suited to optical system s • L ow d ark cu rre n t : ICEO = 5 nA typ. • F a st re sp o n se : tr, tf = 3 |as (typ.)

C2833A

Abstract: 2SC2833 2SC2833A 2SC2841 3PES WT-150
Contextual Info: PANASONIC INDL/ELEK-CSEHI} 72C D | t,c]32flS4 000^572 □ 3 5 - / 3 2SC2833, 2SC2833A 2SC2833, 2SC2833A > IJ ZJ > N P N = S 3 £ ifc ff 2 /S i N P N Triple Diffused >y 51 v ^ f f l / H i g h Speed Sw itching • ¡tt • ^ /F e a tu r e s X -f 'y -f-> ^ j S * fiiv->0/H ig h speed sw itching

2SD693

Abstract: 2SA720 2SD692 2SD69 2SD691 S102
Contextual Info: PANASONIC INDL/ELEK-CSEMIJ 72C D | ^ 3 2 6 5 4 h □ □ □ CI37C] \ = \ q ' T ^ 3 ~ ( _ ’_ 2SD691, 2SD692 2SD691, 2SD692 '> U =1 v N PN K / S i N PN Diffused Junction Mesa Power Amplifier • 4# ^ /F e a t u r e s

2SC2671

Abstract: 2SC2778
Contextual Info: PANASONIC INDL/ELEK-CSEMI} ?EC D | b ti32ÛS4 □□□TE43 3 h ’_2SC2671 H 2SC2671 (H) '> ij 3 y NPN x kf£ / S i NPN Epitaxial Planar UHFfcfiJifciatBffi/UHF Low-noise Amplifier • féiì/Features • ÌlefÌìiiSc N F tH B ^ ' o/ L

2SB870

Abstract: CI43 2SD876 2SD866 2SD866A 2SD884
Contextual Info: PANASONIC I N D L /E LE Ki SE MI} 7SC D | 1^35*154 D D m M E I _ ' T - I s l - K h |~~ 2SD866, 2SD866A 2SD866, 2 S D 8 6 6A '> ij □ y NPN x b°£ ^ ' > 7 J l ' Z f l '—i - f t t / S i NPN Epitaxial Planar 112 X -i "J 2SB870 • > P R /P o w e r Switching

2SC1787

Abstract: 2SA880 2SC1929
Contextual Info: ““ PANASONIC INDL/ELEK-CSEim h 7SC D | ^32654 DDmiDD 3 *_ _ 2SC1787 2SC1787 $"> yJ[/ 7 °ls — i ~ M / S i N P N Epitaxial Planar '> ij =i V N P N x Low-noise Amplifier *J /C o m p le m e n ta ry P air w ith 2SA880 2SA880

PN102

Contextual Info: Panasonic Phototransistors PN102 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs LEDs • Low dark current : ICEO = 5 nA typ. • Fast response : tr, tf = 3 |as (typ.)

IGNITOR Z 400 M diagram

Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8
Contextual Info: PANASONIC INDL/ELEK-CSEtllJ 7EC D | 1 1 3 5 6 5 M □ 7 ^ 3^ / / | 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^