PACKAGE MARKING I60 Search Results
PACKAGE MARKING I60 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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PACKAGE MARKING I60 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, PECL/LVDS Product Features: Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage |
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LVPEMIL-STD-883, MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 | |
E4 SMD
Abstract: ILSI Vcxo
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 E4 SMD ILSI Vcxo | |
Contextual Info: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, PECL/LVDS Applications: Product Features: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage |
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 | |
VCXO
Abstract: I607 Series
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 VCXO I607 Series | |
Contextual Info: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Applications: Product Features: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations |
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 | |
Contextual Info: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Applications: Product Features: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations |
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 | |
Contextual Info: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Product Features: Applications: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations |
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 | |
E4 SMD
Abstract: marking code E3 SMD I605-1BC3H-20
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 E4 SMD marking code E3 SMD I605-1BC3H-20 | |
Contextual Info: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, PECL / LVDS 14.3 Max. Applications: Product Features: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage |
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 | |
Contextual Info: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, PECL / LVDS Product Features: 14.3 Max. Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage |
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 MIL-STD-202, | |
4-SMD marking R1
Abstract: E4 SMD
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 MIL-STD-202, 4-SMD marking R1 E4 SMD | |
VCXO
Abstract: I606 Series
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MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 VCXO I606 Series | |
Contextual Info: CONFORMAL SIPs, MEDIUM PROFILE 4 THROUGH 14 PIN • Medium profile offers increased power handling ■ Wide assortment of pin packages enhances design flexibility bo—ns ■ High temperature design ensures compatibility with all popular board soldering techniques |
OCR Scan |
4600M 100ppm/Â 250ppm/Â 100ppm/V | |
qs marking sot-89
Abstract: lm7805 sot23 FAIRCHILD MC7805 43B SOT23 dual diode m32 sot-89 Marking 24 zener diode SOT-89 marking ML marking 43A sot23 ml marking sot 89 LM431SCCMFX
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LM431SA/LM431SB/LM431SC 100mA 50ppm/ qs marking sot-89 lm7805 sot23 FAIRCHILD MC7805 43B SOT23 dual diode m32 sot-89 Marking 24 zener diode SOT-89 marking ML marking 43A sot23 ml marking sot 89 LM431SCCMFX | |
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
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EC111 EC2111v1E0804 PK P6KE 200A SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA | |
Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMS86250 | |
MO-240Contextual Info: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
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FDMS8018 MO-240 | |
Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMS86250 FDMS86250 | |
Contextual Info: FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 mΩ Features General Description Max rDS on = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86520 FDMS86520 | |
Contextual Info: FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 mΩ Features General Description ̈ Max rDS on = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86520 | |
FDMS8018
Abstract: MO-240
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FDMS8018 FDMS8018 MO-240 | |
FDMS86320Contextual Info: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
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FDMS86320 FDMS86320 | |
Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description ̈ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86540 | |
Contextual Info: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node |
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FDMS86320 |