Untitled
Abstract: No abstract text available
Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, PECL/LVDS Product Features: Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
LVPEMIL-STD-883,
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
|
E4 SMD
Abstract: ILSI Vcxo
Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, LVPECL / LVDS Product Features: Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
E4 SMD
ILSI Vcxo
|
Untitled
Abstract: No abstract text available
Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, PECL/LVDS Applications: Product Features: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
|
VCXO
Abstract: I607 Series
Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, LVPECL / LVDS Applications: Product Features: Small Surface Mount Package Low Noise Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
VCXO
I607 Series
|
Untitled
Abstract: No abstract text available
Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Applications: Product Features: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
|
Untitled
Abstract: No abstract text available
Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Applications: Product Features: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
|
Untitled
Abstract: No abstract text available
Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Product Features: Applications: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
|
E4 SMD
Abstract: marking code E3 SMD I605-1BC3H-20
Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Product Features: Applications: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
E4 SMD
marking code E3 SMD
I605-1BC3H-20
|
Untitled
Abstract: No abstract text available
Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, PECL / LVDS 14.3 Max. Applications: Product Features: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
|
Untitled
Abstract: No abstract text available
Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, PECL / LVDS Product Features: 14.3 Max. Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
MIL-STD-202,
|
4-SMD marking R1
Abstract: E4 SMD
Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, LVPECL / LVDS Product Features: 14.3 Max. Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
MIL-STD-202,
4-SMD marking R1
E4 SMD
|
VCXO
Abstract: I606 Series
Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, LVPECL / LVDS Applications: Product Features: Small Surface Mount Package Low Noise Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage 1 MHz to 180.000 MHz
|
Original
|
PDF
|
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
2x10-8
VCXO
I606 Series
|
qs marking sot-89
Abstract: lm7805 sot23 FAIRCHILD MC7805 43B SOT23 dual diode m32 sot-89 Marking 24 zener diode SOT-89 marking ML marking 43A sot23 ml marking sot 89 LM431SCCMFX
Text: LM431SA/LM431SB/LM431SC Programmable Shunt Regulator Features Description • • • • The LM431SA/LM431SB/LM431SC are three terminal output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set any value between VREF approximately 2.5 volts
|
Original
|
PDF
|
LM431SA/LM431SB/LM431SC
100mA
50ppm/
qs marking sot-89
lm7805 sot23
FAIRCHILD MC7805
43B SOT23
dual diode m32
sot-89 Marking 24 zener diode
SOT-89 marking ML
marking 43A sot23
ml marking sot 89
LM431SCCMFX
|
Nichicon WEEK CODE
Abstract: U1150M U1150S Sanyo CAPACITOR DATE CODE MARKING ON PACKING APU1150 panasonic Aluminum capacitor marking date code
Text: Technology Licensed from International Rectifier Advanced Power Electronics Corp. APU1150 4A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES The APU1150 is a 4A regulator with extremely low dropout voltage using a proprietary bipolar process that
|
Original
|
PDF
|
APU1150
APU1150
U1150M
M1-M-8-G-v01
O-263-5L
U1150S
Nichicon WEEK CODE
U1150M
U1150S
Sanyo CAPACITOR DATE CODE MARKING ON PACKING
panasonic Aluminum capacitor marking date code
|
|
|
Untitled
Abstract: No abstract text available
Text: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDMS86250
|
MO-240
Abstract: No abstract text available
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
|
Original
|
PDF
|
FDMS8018
MO-240
|
Untitled
Abstract: No abstract text available
Text: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
|
Original
|
PDF
|
FDMS86250
FDMS86250
|
Untitled
Abstract: No abstract text available
Text: FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 mΩ Features General Description Max rDS on = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
|
Original
|
PDF
|
FDMS86520
FDMS86520
|
Untitled
Abstract: No abstract text available
Text: FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 mΩ Features General Description ̈ Max rDS on = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
|
Original
|
PDF
|
FDMS86520
|
FDMS8018
Abstract: MO-240
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
|
Original
|
PDF
|
FDMS8018
FDMS8018
MO-240
|
FDMS86320
Abstract: No abstract text available
Text: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
|
Original
|
PDF
|
FDMS86320
FDMS86320
|
Untitled
Abstract: No abstract text available
Text: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description ̈ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
|
Original
|
PDF
|
FDMS86540
|
Untitled
Abstract: No abstract text available
Text: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
|
Original
|
PDF
|
FDMS86320
|
Untitled
Abstract: No abstract text available
Text: CONFORMAL SIPs, MEDIUM PROFILE 4 THROUGH 14 PIN • Medium profile offers increased power handling ■ Wide assortment of pin packages enhances design flexibility bo—ns ■ High temperature design ensures compatibility with all popular board soldering techniques
|
OCR Scan
|
PDF
|
4600M
100ppm/Â
250ppm/Â
100ppm/V
|
