BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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marking code w7
Abstract: BZT52C surge marking WM BZT52C BZT52C4V3S
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company BZT52C 4V3S to 39S SURFACE MOUNT SILICON ZENER DIODES SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA
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BZT52C
OD-323
C-120
BZT52C4V3S
Rev200105E
marking code w7
BZT52C surge
marking WM
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BB515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Nov-08-2002
BB515
BF999
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BZT52C 4V3S to 39S SURFACE MOUNT SILICON ZENER DIODES SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA
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PDF
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BZT52C
OD-323
C-120
BZT52C4V3S
Rev200105E
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Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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bb515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Jun-28-2001
bb515
BF999
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marking WM
Abstract: marking code w7 BZT52C BZT52C surge ts 4141 BZT52C4V3S SOD 323 MARKING CODE WU
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BZT52C 4V3S to 39S SURFACE MOUNT SILICON ZENER DIODES SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA
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BZT52C
OD-323
C-120
BZT52C4V3S
Rev200105E
marking WM
marking code w7
BZT52C surge
ts 4141
SOD 323 MARKING CODE WU
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FMX-22S
Abstract: FMX22S
Text: SANKEN ELECTRIC CO., LTD. FMX-22S 1. Scope The present specifications shall apply to a FMX-22S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings
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FMX-22S
FMX-22S.
UL94V-0
FMX22S
FMX-22S
FMX22S
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FML-22S
Abstract: FML22S
Text: SANKEN ELECTRIC CO., LTD. FML-22S 1. Scope The present specifications shall apply to an FML-22S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 030123 1/5 61426-01 SANKEN ELECTRIC CO., LTD.
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FML-22S
FML-22S.
UL94V-0
FML22S
FML-22S
FML22S
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMM-22S/R 1 Scope The present specifications shall apply to an FMM-22S/R. 2 Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification 3 Flammability UL94V-0 Equivalent 040805 1/5 61426-01
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FMM-22S/R
FMM-22S/R.
UL94V-0
FMM-22S
FMM22S
FMM-22R
FMM22R
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMU-22S/R 1. Scope The present specifications shall apply to FMU-22S/R. 2. Outline High Frequency Rectification Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent
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FMU-22S/R
FMU-22S/R.
UL94V-0
FMU-22S
FMU-22R
FMU22S
FMU22R
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FMX-22SL
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. FMX-22SL 1. Scope The present specifications shall apply to an FMX-22SL. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 030813 1/8 61426-01 SANKEN ELECTRIC CO., LTD.
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FMX-22SL
FMX-22SL.
UL94V-0
FMX22S
FMX-22SL
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Untitled
Abstract: No abstract text available
Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive
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STAC3932B
2002/95/EC
STAC244B
STAC3932B
STAC3932
DocID15449
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STAC3932
Abstract: STAC3932B STAC244B
Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description
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STAC3932B
2002/95/EC
STAC3932B
STAC244B
STAC3932
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Untitled
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
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SD2933W
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
SD2933W
SD2933W
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Footprint recommendation for UDFN4
Abstract: No abstract text available
Text: STM6519 4-pin Smart Reset Preliminary data Features • Operating voltage range 2 V to 5.5 V ■ Low supply current 1 A ■ Customer test mode ■ Single Smart Reset™ push-button input with fixed extended reset setup delay tSRC from 0.5 s to 10 s in 0.5 s steps (typ.), option with
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STM6519
Footprint recommendation for UDFN4
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Footprint recommendation for UDFN4
Abstract: UDFN6
Text: STM6519 4-pin Smart Reset Features • Operating voltage range 2 V to 5.5 V ■ Low supply current 1 A ■ Customer test mode ■ Single Smart Reset™ push-button input with fixed extended reset setup delay tSRC from 0.5 s to 10 s in 0.5 s steps (typ.), option with
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STM6519
Footprint recommendation for UDFN4
UDFN6
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Footprint recommendation for UDFN4
Abstract: udfn-4l STM6519AHARUB6F
Text: STM6519 4-pin Smart Reset Datasheet − production data Features • Operating voltage range 2 V to 5.5 V ■ Low supply current 1 A ■ Integrated test mode ■ Single Smart Reset™ push-button input with fixed extended reset setup delay tSRC from
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STM6519
Footprint recommendation for UDFN4
udfn-4l
STM6519AHARUB6F
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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SANYO sh2a027-1
Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Text: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead
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004A-DIP14TK
010A-DIP22
005A-DIP14T
011A-DIP24
3000B-NP
3006B-
T0126
SC-43
T0220M
T03PB
SANYO sh2a027-1
3116-SIP12S
ic 4040
MPP36S
SIP14H
3047a
3151-QIP100E
3149-DIP48S
3037A-DIP20H
3029A-DIP28S
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BF993
Abstract: Silicon N Channel MOSFET Tetrode
Text: Silicon N Channel MOSFET Tetrode • • BF 993 High gain, low distortion For VHF TV and FM mixer and input stages Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BF 993 ME Q62702-F899 Q62702-F1018 SOT 143 Maximum ratings
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Q62702-F899
Q62702-F1018
100MHz
BF993
Silicon N Channel MOSFET Tetrode
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52s marking code
Abstract: 52s marking Silicon N Channel MOSFET Tetrode
Text: Silicon N Channel MOSFET Tetrode BF 995 F o r F M and V H F T V input and m ixer sta g e s Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 995 MB Q 62702-F872 Q 62702-F936 S O T 143 Maximum ratings Parameter
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OCR Scan
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62702-F872
62702-F936
I-150
52s marking code
52s marking
Silicon N Channel MOSFET Tetrode
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CTS 750 series
Abstract: 330 ohm resistor pack CTS RESISTOR NETWORK 761 CTS Series 750 Resistor Network 670 OHM RESISTOR RESISTOR 4.7K NETWORK 5 tolerance cts resistor 770 & 750 CTS RESISTOR NETWORK A 473 G CTS 767 Series
Text: C T S CORP bhE D 17fll SDb 0a032b4 17T cm S in g l e -in -l in e S e r ie s 750 Resistance Range: Dielectric Strength: Standard: 220 through 1 Megfl Special: below 22S2 and above 1 Megfi Solid ceramic machine insertable SIP networks. CTS' solid ceramic construction
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17fll
0a032b4
200VAC
rat10-2000
CTS 750 series
330 ohm resistor pack
CTS RESISTOR NETWORK 761
CTS Series 750 Resistor Network
670 OHM RESISTOR
RESISTOR 4.7K NETWORK 5 tolerance
cts resistor
770 & 750 CTS RESISTOR NETWORK
A 473 G
CTS 767 Series
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