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    PA185 Search Results

    PA185 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA1856GR(0)-9JG-E2-AT Renesas Electronics Corporation Pch Dual Power Mosfet -20V -4.5A 45Mohm Tssop8 Visit Renesas Electronics Corporation
    UPA1856GR(0)-9JG-E1-AT Renesas Electronics Corporation Pch Dual Power Mosfet -20V -4.5A 45Mohm Tssop8 Visit Renesas Electronics Corporation
    UPA1856GR-9JG-E1-AT Renesas Electronics Corporation Pch Dual Power Mosfet -20V -4.5A 45Mohm Tssop8 Visit Renesas Electronics Corporation
    UPA1857GR-9JG-E1-A Renesas Electronics Corporation Nch Dual Power Mosfet 60V 3.8A 67.0Mohm Tssop8 Visit Renesas Electronics Corporation
    UPA1850GR-9JG-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
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    PA185 Price and Stock

    Nichicon Corporation PPA1853220KJ

    CAP FILM 0.22UF 10% 850VDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PPA1853220KJ Bulk 321 1
    • 1 $3.65
    • 10 $2.414
    • 100 $3.65
    • 1000 $1.43666
    • 10000 $1.26686
    		Buy Now
    Mouser Electronics PPA1853220KJ 291
    • 1 $3.47
    • 10 $2.67
    • 100 $2.08
    • 1000 $1.62
    • 10000 $1.42
    		Buy Now

    Nichicon Corporation PPA1853330KJ

    CAP FILM 0.33UF 10% 850VDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PPA1853330KJ Bulk 297 1
    • 1 $3.46
    • 10 $2.314
    • 100 $3.46
    • 1000 $1.541
    • 10000 $1.541
    		Buy Now
    Mouser Electronics PPA1853330KJ 4
    • 1 $4.37
    • 10 $2.93
    • 100 $1.85
    • 1000 $1.74
    • 10000 $1.67
    		Buy Now

    Nichicon Corporation PPA1853100KG

    CAP FILM 0.1UF 10% 850VDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PPA1853100KG Bulk 291 1
    • 1 $3.44
    • 10 $2.27
    • 100 $1.649
    • 1000 $1.35679
    • 10000 $1.17586
    		Buy Now
    Mouser Electronics PPA1853100KG 54
    • 1 $3.15
    • 10 $2.43
    • 100 $1.85
    • 1000 $1.29
    • 10000 $1.2
    		Buy Now

    Nichicon Corporation PPA1854100KN

    CAP FILM 1UF 10% 850VDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PPA1854100KN Bulk 207 1
    • 1 $7.67
    • 10 $5.3
    • 100 $7.67
    • 1000 $3.51935
    • 10000 $3.19211
    		Buy Now
    Mouser Electronics PPA1854100KN 216
    • 1 $5.77
    • 10 $5
    • 100 $3.9
    • 1000 $3.53
    • 10000 $3.27
    		Buy Now

    Nichicon Corporation PPA1853680KN

    CAP FILM 0.68UF 10% 850VDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PPA1853680KN Bulk 204 1
    • 1 $6.29
    • 10 $4.298
    • 100 $6.29
    • 1000 $2.78513
    • 10000 $2.52976
    		Buy Now
    Find more PA185 price and stock on Findchips.com

    PA185 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA1850 NEC MOS Field Effect Transistor Original PDF
    PA1851 NEC MOS Field Effect Transistor Original PDF
    PA1852 NEC MOS Field Effect Transistor Original PDF
    PA1853 NEC MOS Field Effect Transistor Original PDF
    PA1854 NEC MOS Field Effect Transistor Original PDF
    PA1855 NEC MOS Field Effect Transistor Original PDF
    PA1856 NEC MOS Field Effect Transistor Original PDF
    PA1856GR-9JG NEC MOS Field Effect Transistor Original PDF

    PA185 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ef12.6 core transformer

    Abstract: ef12.6 transformers inductance transformer* EF12 PA2100NL
    Text: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EF12.6 Platforms - SMT Power Range: Up to 13W Height: 10.2mm Max Footprint: 19.9mm x 14.2mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 PA1853NL 2-3


    Original     		PDF 500Vrms 1000Vrms 1000Vrms PA1853NL PA2100NL PA2101NL ef12.6 core transformer ef12.6 transformers inductance transformer* EF12 PA2100NL

    d1296

    Abstract: PA1853
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and


    Original     		PDF PA1853 PA1853 d1296

    UPA1856GR

    Abstract: PA1856 PA1856GR-9JG
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 UPA1856GR PA1856GR-9JG

    d1273

    Abstract: PA1851
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1851 is a switching device which can be driven directly by a 4.0-V power source. The µPA1851 features a low on-state resistance and


    Original     		PDF PA1851 PA1851 PA1851GR-9JG d1273

    PA1854

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and


    Original     		PDF PA1854 PA1854 PA1854GR-9JG

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1858 P チャネル パワーMOS FET スイッチング用 µPA1858 は，2.5 V 電源系による直接駆動が可能なスイッチング 外形図（単位: mm）


    Original     		PDF PA1858 PA1858 PA1858GR-9JG G16276JJ1V0DS

    PA1855

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and


    Original     		PDF PA1855 PA1855 PA1855GR-9JG

    LM 858 IC

    Abstract: No abstract text available
    Text: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EF12.6 Platforms - SMT Power Range: Up to 13W Height: 10.2mm Max Footprint: 19.9mm x 14.2mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 PA1853NL 2-3


    Original     		PDF PA1853NL PA2100NL PA2101NL 500Vrms LM 858 IC

    PA1855

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and


    Original     		PDF PA1855 PA1855

    UPA1856GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 UPA1856GR

    PA1856

    Abstract: PA1856GR-9JG UPA1856GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 PA1856GR-9JG UPA1856GR

    PA1852

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1852 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and


    Original     		PDF PA1852 PA1852 PA1852GR-9JG

    PA1857

    Abstract: transistor MJ 10005 G1506 uPA1857 UPA1857GR
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1857 N チャネル パワーMOS FET スイッチング用 工業用 µPA1857 は，低オン抵抗で，スイッチング特性に優れているため， 外形図（単位: mm）


    Original     		PDF PA1857 PA1857GR-9JG G15060JJ2V0DS PA1857 transistor MJ 10005 G1506 uPA1857 UPA1857GR

    UPA1856GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 UPA1856GR

    D128

    Abstract: PA1852
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1852 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and


    Original     		PDF PA1852 PA1852 PA1852GR-9JG D128

    PA1854

    Abstract: a4660
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and


    Original     		PDF PA1854 PA1854 a4660

    D1380

    Abstract: PA1856 PA1856GR-9JG UPA1856GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 D1380 PA1856GR-9JG UPA1856GR

    PA1858

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1858 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and


    Original     		PDF PA1858 PA1858

    d1296

    Abstract: PA1853
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and


    Original     		PDF PA1853 PA1853 d1296

    PA1855

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    PA1852

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PA1858 PA1858 G16276JJ1V0DS

    d1273

    Abstract: SS-220 10v PA1851 UPA1851GR-9JG
    Text: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent


    OCR Scan     		PDF uPA1851 105mQMAX. 210mQMAX. J45a9 d1273 SS-220 10v PA1851 UPA1851GR-9JG

    g10q

    Abstract: PA1853 uPA1853GR-9JG
    Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor H PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The ¡x PA1853 is a switching device which can be driven directly by a 4V power source. The n PA1853 features a low on-state resistance and excellent


    OCR Scan     		PDF uPA1853 PA1853 85mQMAX. 190mQMAX. 220mDMAX. g10q uPA1853GR-9JG