DHG10
Abstract: DHG10I1800PA
Text: DHG 10 I 1800 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 10 A 300 ns Part number DHG 10 I 1800 PA 3 1 Backside: cathode Features / Advantages: Applications:
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DHG10I1800PA
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Untitled
Abstract: No abstract text available
Text: DHG 10 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 10 A 200 ns Part number DHG 10 I 1200 PA 3 1 Backside: cathode Features / Advantages: Applications:
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diode marking b2
Abstract: DHG10I1800PA DHG10 508242 10i1800 dhg10i1800 diode marking 432
Text: DHG 10 I 1800 PA advanced V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 10 A 150 ns Part number DHG 10 I 1800 PA 3 1 Backside: cathode Features / Advantages: Applications:
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diode marking b2
DHG10I1800PA
DHG10
508242
10i1800
dhg10i1800
diode marking 432
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t 3866 power transistor
Abstract: t 3866 t 3866 transistor DPG10I200PA DPG10I200PM
Text: DPG 10 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number DPG 10 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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t 3866
t 3866 transistor
DPG10I200PA
DPG10I200PM
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DMA10I1600PA
Abstract: diode 1600
Text: DMA 10 I 1600 PA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 10 A 1.32 V Part number DMA 10 I 1600 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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O-220
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diode 1600
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DPG10I400PM
Abstract: DPG10I400PA
Text: DPG 10 I 400 PA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 10 A 45 ns Part number DPG 10 I 400 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-220AC
DPG10I400PM
DPG10I400PA
O-220ACFP
60747and
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DPG10I400PM
DPG10I400PA
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DPG10I400PA
Abstract: DPG10I400PM
Text: DPG 10 I 400 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 10 A 45 ns Part number DPG 10 I 400 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG10I400PM
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DPG10I400PA
Abstract: DPG10I400PM
Text: DPG 10 I 400 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 10 A 45 ns Part number DPG 10 I 400 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG10I400PM
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t 3866 power transistor
Abstract: t 3866 DPG10I300PA anode common fast recovery diode TO-220
Text: DPG 10 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG10I300PA
anode common fast recovery diode TO-220
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AKZ4
Abstract: led lamp 24 v atex 0368500000 e12 lamp socket ADK1 varistor sl 22
Text: Content Terminal Blocks Mini Modular Terminals Mini Modular Terminals TS 15 / PA E.2 - E.3 Modular PE terminals TS 15 / PA E4 - E.6 Fuse terminals TS 15 / PA E.7 With push-on connection TS 15 / PA E.8 With solder connection TS 15 / PA E.10 - E.13 With Termi-Point / Wire-Wrap connection
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15/PA
AKZ4
led lamp 24 v atex
0368500000
e12 lamp socket
ADK1
varistor sl 22
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DIODE 1N4007
Abstract: 0340720000 datasheet DIODE 1N4007 point test 1339060000 0412160000 1N4007 DIODE 041212 0183360000 018-0400
Text: Disconnect Terminals SAKR SAKR-D SAKC 4 SAKC 10 Pull Pin Pull Pin With StB test points Lever Plug Terminal Block Selection Data Available Options Version With 2 StB test points KrS PA With 2 StB test points KrS Blue PA With 2 StB test points KrS without diode PA
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054646000onnector
1N4007
DIODE 1N4007
0340720000
datasheet DIODE 1N4007
point test
1339060000
0412160000
1N4007 DIODE
041212
0183360000
018-0400
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Untitled
Abstract: No abstract text available
Text: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifiers ADA4841-1/ADA4841-2 Data Sheet FEATURES CONNECTION DIAGRAMS Low power: 1.1 mA/amp Low wideband noise 2.1 nV/√Hz 1.4 pA/√Hz Low 1/f noise 7 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion: −105 dBc @ 100 kHz, VO = 2 V p-p
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ADA4841-1/ADA4841-2
ADA4841-1
OT-23
D05614â
CP-8-11
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Untitled
Abstract: No abstract text available
Text: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifier ADA4841-1 CONNECTION DIAGRAM TOP VIEW Low power: 1.1 mA supply current Low wideband noise 2 nV/√Hz 1.4 pA/√Hz Low 1/F noise 6 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion −110 dBc @ 100 kHz, VO = 2 V p-p
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ADA4841-1
16-bit
ADA4841-1YRZ1
ADA4841-1YRZ-R71
ADA4841-1YRZ-RL1
D05614â
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Untitled
Abstract: No abstract text available
Text: Low Power, Low Noise and Distortion, Rail-to-Rail Output Amplifiers ADA4841-1/ADA4841-2 CONNECTION DIAGRAMS FEATURES Low power: 1.1 mA/amp Low wideband noise 2.1 nV/√Hz 1.4 pA/√Hz Low 1/f noise 7 nV/√Hz @ 10 Hz 13 pA/√Hz @ 10 Hz Low distortion: −105 dBc @ 100 kHz, VO = 2 V p-p
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ADA4841-1/ADA4841-2
ADA4841-1
OT-23
D05614â
CP-8-11
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GVD90007-011
Abstract: GVD90007 GVD90005-011
Text: Preliminary Data - January 1999 GVD90000 Series SUPER HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • . • Reverse breakdown voltage (at 10 pA DC) at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25"C: 0.05 pA D<
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GVD90000
OD-323
OD-323
GVD90001-011
GVD90002-011
GVD90003-011
GVD90004-011
GVD90005-011
GVD90006-011
GVD90007-011
GVD90007
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silicon epitaxial mesa diode
Abstract: GVD1404-001
Text: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC
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GVD1400
GVD1401-004
GVD1404-004
GVD1401-001
GVD1404-001
OT-23
silicon epitaxial mesa diode
GVD1404-001
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD20430 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC
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GVD20430
GVD20435-001
GVD20435-004
GVD20436-001
GVD20436-004
GVD20437-001
GVD20437-004
OT-23
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CR SOT23
Abstract: GVD20430
Text: Preliminary Data - January 1999 GVD20430 SERIES SPRA6UE-G00DHUUI ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTO R DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA Di
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GVD20430
SPRA6UE-G00DHUUI
GVD20433-001
GVD20434-001
GVD20435-001
GVD20436-001
GVD20437-001
GVD20433-004
GVD20434-004
GVD20435-004
CR SOT23
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD20440, GVD20450 SERIES SPRAGUi-GOODIHAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25*C: 0.05 pA DC
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GVD20440,
GVD20450
GVD20442-001
GVD20443-001
GVD20444-001
GVD20445-001
GVD20450-001
GVD20450-004
OT-23
11S90
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0134000000
Abstract: 1n4007 diode
Text: SAKR-D SAKR Disconnect Terminals SAKC 4 SAKC 10 Pull Pin Pull Pin With StB test points Cl’ Lever Plug Terminal Block Selection Data Available Options Version With 2 StB test points KrS PA With 2 StB test points KrS Blue PA With 2 StB test points KrS without diode PA
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1N4007
1N4007
0134000000
1n4007 diode
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GVD30503-001
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC
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GVD30500
GVD30501-004
GVD30502-004
GVD30503-004
GVD30504-004
GVD30501-001
GVD30502-001
GVD30503-001
GVD30504-001
OT-23
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SOD323 Package footprint
Abstract: GVD91300 SOD323 parasitic
Text: Preliminary Data - January 1999 GVD91300 Series MICROWAVE ABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC
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GVD91300
OD-323
OD-323
GVD91304-011
GVD91305-011
GVD91306-011
GVD91307-011
GVD91308-011
GVD91309-011
GVD91310-011
SOD323 Package footprint
SOD323 parasitic
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silicon epitaxial mesa diode
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD92100 Series MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 22 V min Maximum reverse leakage current (at -20 V) at 25°C: 0.05 pA DC
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GVD92100
OD-323
OD-323
GV092101-011
GVD92102-011
GVD92103-011
GVD92104-011
GVD92105-011
GVD92106-011
silicon epitaxial mesa diode
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD1200 SERIES SPRAGIIE-GOODMAN ELECTRONICS, INC. HIGH Q ABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC
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GVD1200
GVD1216-004
GVD1217-004
OT-23
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