P7 TRANSISTOR Search Results

M37733S4BFP

Abstract: 80P6N
Contextual Info: MITSUBISHI MICROCOMPUTERS M37733S4BFP t duc ro p New 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Programmable input/output ports P4, P5, P6, P7, P8 . 37 ●Clock generating circuit . 2 circuits built-in

Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage

DMA364A0

Abstract: dma364
Contextual Info: DMA364A0 Tentative Total pages page DMA364A0 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : P7 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: MITSUBISHI MICROCOMPUTERS M37733S4BFP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •P ro g ra m m a b le input/output The M 37733S4BFP is a m icrocom puter using the 7700 Family core. ports P4, P5, P6, P7, P 8 . 37

Contextual Info: 7600 Series M37640E8-XXXF Preliminary Specification Mitsubishi Microcomputer 3 Electrical Characteristics 3.1 Absolute Maximum Ratings Table 3-1. Absolute Maximum Ratings Parameter Conditions Symbol uu > Power supply AVCC Analog power supply Vi Input voltage PO, PI, P2, P3, P4, P5, P6, P7, P8

FSEM30

Abstract: BFP740 AN219 michael hiebel fundamentals of vector analysis NRP-Z21 sot344 BFP740ESD BFP740FESD C166 MTA-100
Contextual Info: BF P7 4 0 E SD BF P7 4 0 E SD E S D- H a rd e n e d S i Ge :C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 5 d B G a i n , 1 .3 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff

michael hiebel fundamentals of vector analysis

Abstract: NRP-Z21 AN220 BFP740FESD MTA-100 rf detector diode BFP740F C166 TSLP-2-17 FSEM30
Contextual Info: BF P7 4 0 F ES D BF P7 4 0 F ES D E SD - Ha r d e n e d Si Ge : C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 7 d B G a i n , 1 .4 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff

television service mode manual

Contextual Info: G O L D S T A R T E C H N O L O G Y INC/ 51 E D •■4036757 QDDaab4 1 ■ I : 7 5 r.C> 7-< P7 GM6388 15 MEMORY TONE/PULSE SWITCHABLE DIALER DESCRIPTION The GM6388 is a monolithic integrated circuit which per­

Contextual Info: TLP733FJLP734F TO SHIBA TOSHIBA PHOTOCOUPLER TI P7 3 3 F GaAs IRED & PHOTO-TRANSISTOR TI P73 4F Unit in mm OFFICE MACHINE SWITCHING PO W ER SUPPLY TJ.'TJJXT 3 7I QUQUT1? U 11U -1- T T . PI U7 QT 1y l l ? W UnAOViO P Iie> 4-e>U in f CL o r\l^ A + A /O optically coupled to a gallium arsenide infrared emitting diode in a six

T018

Abstract: 2n1132
Contextual Info: PNP Silicon Transistors PNP Silico n T ran sisto rs fo r high level audio ap p lications Characteristics at T.im jj = 2 5 °C M a xim um ratings Type B V CSO V BVC £0 V Case B V £S O V l CM A P7 0 T 1 W PT O T 2 W J JM °C h F £ 1 0 V /1 5 0 m A 30 . 25 0

20A400

Abstract: 2SD1592 transistor n1t1
Contextual Info: 2SD1592 NPN x i l NPN S ilicon T riple D iffuse d D arlington Transistor H igh V o lta g e , Low Speed S w itc h in g Industrial Use m&m « i : 1 ? - o o3 V 1 0 .5 M A X . ij > h ? i'felfD!trh*'' u0 o i£ W iK ^ T -# > 5 „ o p7 '< , 4 '•<, o tm m a itm u fT - y

BFP740FESD

Abstract: MARKING P740 TR1013 BFP740 mipi PCB layout sdars zetex t 1053 zetex 1053 RF TRANSISTOR 10GHZ sdars lna
Contextual Info: BF P740 F ES D High Gain and Lo w Noise Amplifier BF P7 4 0 F ES D f o r S DA Rs 2 . 3 3 G Hz Applic atio n Technic al Rep ort T R 1013 Revision: Rev. 1.0 2010-04-23 RF and Protecti on Devi c es Edition 2010-04-23 Published by Infineon Technologies AG 81726 Munich, Germany

TRANSFORMER ERL35

Abstract: 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer
Contextual Info: PM30006-01 ATX 300W 115Vac/230Vac 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7

230v to 12v step down transformer

Abstract: 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34
Contextual Info: PM30006-02 ATX 300W 230V 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7

hef4051

Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
Contextual Info: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●

transistor p14

Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
Contextual Info: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.

Contextual Info: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ) Individual Activity Latches Capture

P7 transistor

Abstract: MARKING P7 SOT-323 LDTA113ZWT1G marking A1 TRANSISTOR micro-dot resistor transistor marking P7
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

Contextual Info: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ) Individual Activity Latches Capture

Contextual Info: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch PIN CONFIGURATION FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ)

DS2408

Abstract: DS80C520 RX-2 -G rc car 16 pin diagram of lcd display 16x1 CRC16 CRC-16 DS2408S DS2480B DS9097U pc controlled car circuit diagram using 8051
Contextual Info: 19-5702; 12/10 DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ)

transistor TD-100

Abstract: transistor TD-100 le NSP6190
Contextual Info: NSP6190 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS*