P4 TRANSISTOR Search Results

NCN100-F23-E2-V1

Abstract: NJ50-FP-E2-P4-BHMS4 NJ50-FP-E-P4 NCB50-FP-E2-P4 NJ50-FP-E2-P4 crastin ICS5-2000 NJ50-FP-E-P4-V1 NJ50-FP-E2-P4-V1
Contextual Info: Inductive Proximity Sensors 50mm to100mm Sensing Range 3-Wire DC Specifications 50mm Yes No 100mm No — NJ50-FP-E-P4 — NCB50-FP-E2-P4 NJ50-FP-E2-P4 NCN100-F23-E2-V1 Suffix E0/E — NPN, sinking — Suffix E2 PNP, sourcing PNP, sourcing PNP, sourcing 200mA max.

M37733S4BFP

Abstract: 80P6N
Contextual Info: MITSUBISHI MICROCOMPUTERS M37733S4BFP t duc ro p New 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Programmable input/output ports P4, P5, P6, P7, P8 . 37 ●Clock generating circuit . 2 circuits built-in

MP4503

Contextual Info: TOSHIBA MP4503 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 3 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

DARLINGTON 3A 100V npn array

Abstract: mp45
Contextual Info: TOSHIBA MP4506 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 6 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

Contextual Info: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C

Transistor BFR 14

Abstract: NPN planar RF transistor Transistor BFR 50 D-7100 Transistor BFR 30 D7100 STA 7100
Contextual Info: BFR 92 BFR 92 R Marked with. P 1 TTlkdiFyMD&IJiMelectronic Marked with: P4 Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially tor wideband antenna amplifier Features: • High power gain • High transition frequency

MP4013

Abstract: MP401
Contextual Info: TOSHIBA MP4013 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 0 1 3 HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.

MP4507

Contextual Info: TOSHIBA MP4507 TOSHIBA POWER TRANSISTOR MODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 7 HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm H A M M ER DRIVE, PULSE M OTOR DRIVE AN D INDUCTIVE. LOAD SWITCHING

pnp darlington array

Abstract: DARLINGTON TRANSISTOR ARRAY MP4504
Contextual Info: TOSHIBA MP4504 TOSHIBA POWER TRANSISTOR MODULE SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 4 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. Package with Heat Sink Isolated to Lead (SIP 12 Pin)

SG3842GD

Abstract: SG3842GS Brymen BM729 20CTQ100 SG3843GS sg 3842 a Zentech 2600a GR 8876 E56086 BM729
Contextual Info: PNB60190T-SG384x C o n t e n t s 1.General 2.Demo Specification.P2 Board Circuit Diagram.P3 3.BOM.P4 4.Transformer 5.Check List.P8 6.Temperature 7.EMI Test 8.EMS Test 9.SG384x

MP4502

Contextual Info: TOSHIBA MP4502 TOSHIBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE DARLINGTON PO W E R TRANSISTOR 4 IN 1 M P4 50 2 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 31.5 ± 0.2

Contextual Info: MITSUBISHI MICROCOMPUTERS M37733S4BFP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •P ro g ra m m a b le input/output The M 37733S4BFP is a m icrocom puter using the 7700 Family core. ports P4, P5, P6, P7, P 8 . 37

Contextual Info: 7600 Series M37640E8-XXXF Preliminary Specification Mitsubishi Microcomputer 3 Electrical Characteristics 3.1 Absolute Maximum Ratings Table 3-1. Absolute Maximum Ratings Parameter Conditions Symbol uu > Power supply AVCC Analog power supply Vi Input voltage PO, PI, P2, P3, P4, P5, P6, P7, P8

Contextual Info: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.

P403A

Contextual Info: SONY C X P 8 7 1 P4 0 CMOS 8-bit Single Chip Microcomputer Description The CXP871P40 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface 2ch independently , timer/counter, time base timer, vector interruption, high precision timing pattern

MP4514

Contextual Info: T O S H IB A MP4514 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 514 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD SWITCHING Package with Heat Sink Isolated to Lead (SIP 12 Pin)

Contextual Info: SONY C X P 8 7 1 P4 0 CMOS 8-bit Single Chip Microcomputer Description The CXP871P40 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface 2ch independently , timer/counter, time base timer, vector interruption, high precision timing pattern

2SA675

Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Contextual Info: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N

AN7254

Abstract: AN7260 RFP4N05L RFP4N06L TA09520 TB334
Contextual Info: RFP4N05L, RFP4N06L Data Sheet Title FP4 5L, P4 6L bt A, V d V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for

2n3819

Abstract: bf245b
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+

BFP410

Abstract: AN235 C166 TRANSISTOR noise figure measurements TRANSISTOR noise figure measurements application
Contextual Info: BF P4 1 0 In ve s ti g a t i o n o f P h a s e N o i s e i n K u Ba n d DR Os u s i n g BF P4 1 0 Ph a s e n o i s e p e rfo r ma n c e vs . c o l l e c to r c u rre n t Ap p l i c a ti o n N o te A N 2 3 5 Revision: Rev. 1.0 2010-08-11 RF a n d P r o te c ti o n D e vi c e s

4516BF

Abstract: cmos mc14516 4516B IC 4516BT D4516B 4516B
Contextual Info: CD4510B, CD4516B Types 23 HARRIS C D 4510B PRESET_ ENABLE • Medium-speed operation - 4 f^ L = 8 MHz typ. at 10 V BCD Type PI - ■ Synchronous internal carry propagation 3 C D 4 5 1 6 B - B inary Type 2 P4 - ■ Reset and Preset capability

Contextual Info: BurrĆBrown Products from Texas Instruments TMP400 TM P4 00 SBOS404 – DECEMBER 2007 ±1°C Remote and Local TEMPERATURE SENSOR with N-Factor and Series Resistance Correction FEATURES 1 • • • • 234 • • • • • • • • ±1°C REMOTE DIODE SENSOR

LMT3

Abstract: lth5 converter lth7 2N3906 LT11 QSSOP-16 RT11 TMP400 TMP4009 tmp4001
Contextual Info: BurrĆBrown Products from Texas Instruments TMP400 TM P4 00 SBOS404 – DECEMBER 2007 ±1°C Remote and Local TEMPERATURE SENSOR with N-Factor and Series Resistance Correction FEATURES 1 • • • • 234 • • • • • • • • ±1°C REMOTE DIODE SENSOR