P2504BDG Search Results

p2504bdg

Abstract: nikos p2504 sem 2005 nikos transistor niko-sem dpak code P2504BD
Contextual Info: NIKO-SEM N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor Preliminary TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2504BDG

Contextual Info: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: シングル N チャンネル MOSFET ELM32412LA-S •概要 ■特長 ELM32412LA-S は低入力容量 低電圧駆動、 低 ・ Vds=40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=12A ・ Rds on < 25mΩ (Vgs=10V) ・ Rds(on) < 45mΩ (Vgs=4.5V)

ELM32412LA

Contextual Info: 单 N 沟道 MOSFET ELM32412LA-S •概要 ■特点 ELM32412LA-S 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=12A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 45mΩ (Vgs=4.5V) ■绝对最大额定值 项目

Contextual Info: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)