P2006 Search Results

Contextual Info: n > o tb_fram e_C_P_M E_T R sv. □ 2 0 0 4 /0 4 /0 2 // S“ g - oooo oooo o o o oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo 11 ti r~ > ADD 75135-1009 EC NO: U C P2006-0666 DRWN:MSI BARRA 2006/02/06 CH'KD:DMORGAN 2006/02/07 APPR:SMI HER 2006/02/09

new bright R288

Abstract: pc87541v sis*307elv ICS9LPR600 CX20549-12 Reference design RTL8211BL MX318 new bright R266 CX20549 SiS662
Contextual Info: 1 2 3 PCB STACK UP 4 5 6 TW5 Block Diagram LAYER 1 : TOP LAYER 2 : SGND LAYER 3 : IN1 A LAYER 4 : IN2 LAYER 5 : VCC AC/BATT CONNECTOR RUN POWER SW PG 39 BATT CHARGER LAYER 6 : IN3 LAYER 7 : SGND LAYER 8 : BOT PG 39 8 DC/DC +3VPCU +5VPCU DC/DC +1.05V +1.5V

Contextual Info: M OTOROLA Order this document by P20060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet P20060CT SW ITCH MODE™ Schottky Power R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m e tal-to-silicon

Contextual Info: 2 THIS £L DRAWIN G IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. REVISIONS DIST 00 CM LTR DESCRIPTION DATE DWN APVD R E V I S E D PER 0 G 3 B - 0 9 7 8 - 0 4 0 6 -MAY - 0 5 DB

9721

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2502 Jun-97 9721 A6 CARSEM DM708155ACB 1.2µ OX/NI EPROM 08 SOIC 150 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C):

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

P-20606

Abstract: c19643 DS1868 p19500 p1908 DD642 P19-50 B59728 P2050
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 PRODUCT DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS2401 DS2401 DS2401 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-97 Jun-97 Sep-97 Feb-97 Feb-97

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

DS1868

Abstract: DL6-11 c19643 dallas date code ds12887 P1788 P-18182 dk52
Contextual Info: RELIABILITY MONITOR PRODUCT DS1302 DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V.SUMMARY DS1

P-20120

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1233 Jul-97 9716 A5 CARSEM DM706561AAA 1.2µ NITRIDE 03 SOT223 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

Contextual Info: 2 THIS £L DRAWIN G IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST RE V ISIONS 00 CM LTR DESCRIPTION DATE DWN APVD R E V I S E D PE R 0 G 3 B - 0 9 7 8 - 0 4 0 6 -MAY - 0 5

Contextual Info: M O TO R O LA Order this document by P20060CT/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M P20060CT SWITCHMODE™ Schottky Pow er R ectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area m e ta l-to -silico n

Contextual Info: HEWLETT-PACKARD/ CNPNTS blE D • 4 4 4 7 56 4 GGGflTHh 333 « H P A W hpl HEW LETT m itiM P A C K A R D Silicon B ipolar H igh Speed D ecision Circuit w ith 1.5 GBit O peration Comparator/D-FF Technical Data HDMP-2006 Features Description • High Performance Low

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

P8002

Abstract: 4006R P8000 B 503 f30 F80-015 IN4001S IN4001 a 4007 F60-015 F8004 F160-03
Contextual Info: GENERAL PURPOSE RECTIFIER IN D U S T R Y P AR T NO PEA K IN V E R S E V O LTA G E Piv M A X A V G RE C T CURRENT V IN 4001S IN 4002S RL101 R L 102 50 100 IN 4003S IN 4004S R L 103 RL104 400 IN 4 00 5S IN 4 00 6S RL105 RL106 600 800 IN4001 IN 4 00 2 IN4001