P18 TRANSISTOR Search Results

transistor P18

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET

25T60

Abstract: .25T60 RG60s
Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES

50-12P1

Abstract: S2485
Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features

50-12P1

Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18

Contextual Info: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25

237td

Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions

eco-pac

Abstract: transistor P18
Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 ID25 VDSS RDSon PSHM 40/06 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 L9 P18 R18 K12 A1 E10 F10 NTC Preliminary Data Sheet

h48 diode zener

Abstract: MR030 Zener diode H48 FW3227 BOSCH 281 005 019 A1250WV-S-03P Bosch hfm 6 C529 DIODE MR030 ver 0.6 H48 zener diode
Contextual Info: 8 7 6 5 4 3 2 1 3. Block Diagram : CLK SLG8SP512TTR P17 Reset Circuit D Thermal Sensor for DDR temp Intel Thermal Sensor P10 P10 CPU Brightness Control CORE RTC Bat VCCP P27 P56 P30 LED P31 P18 DDR2 533/667 MHz DDRII SODIMM1 B Mem_B Bus P11~P16 C Lid Switch

Contextual Info: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

P181 G

Abstract: p181 IC P181 transistor P18 DTC143E DTD143EK DTD143ES p18 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola tion to allow

P181 G

Abstract: P181 transistor P18 IC P181 p18 transistor p18 pnp DTC143E DTD143EK DTD143ES p181 ic
Contextual Info: Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola tion to allow

SO3572R

Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Contextual Info: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo

transistor p38

Abstract: transistor P39 100 p38 transistor transistor p35 P44 transistor P49 transistor transistor p61 transistor 1BW 57 TMM-118-03-G-D P29 3" tape
Contextual Info: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H8500, H8500B 52 mm Square, Bialkali Photocathode, 12-stage, 8 x 8 Multianode, Small Dead Space, Fast Time Response APPLICATIONS ● Small Animal Imaging ● Compact Gamma Camera ● Scinti-mammography

DDTA123JCA

Abstract: DDTA124XCA
Contextual Info: DDTA R1¹R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 A SOT-23 3 OUT

transistor P18

Abstract: P09 transistor
Contextual Info: DDTA R1¹R2 SERIES KA PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 A D SC-59 TOP VIEW

DDTA114WUA

Abstract: DDTA123JUA DDTA114YUA
Contextual Info: DDTA R1¹R2 SERIES UA PNP PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 UNDER DEVELOPMENT A SOT-323 3 C

DS-0427A

Abstract: b3p27 transistor C5C UNR-2.5/10-D5-C
Contextual Info: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 12V-to-5V 5 Amp, DC/DC Converters Features • No external I/O filtering required ■ +10.4V to +13.6V input ■ +5V ±50mV , 5 Amp output ■ Synchronous-rectifier topology ■ 300kHz switching frequency

Contextual Info: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 5V-to-2.5V 2 Amp, DC/DC Converters Features • Low cost! Complete! ■ No external I/O capacitors required ■ +4.75V to +5.5V input ■ +2.5V ±1.5% , 2 Amp output ■ Low output noise, 30mVp-p

transistor C5C

Abstract: DS-0435A UNR-2.5/8-D12 C16A C16C transistor P18 b3p27
Contextual Info: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 5V-to-2.5V 12 Amp, DC/DC Converters Features • n n n n n n n n n n n n n Low cost! +4.75V to +5.5V input +2.5V ±25mV , 12 Amp output 200kHz, synchronous-rectifier topology High efficiency, 87%

transistor C5C

Abstract: C16A 5w Buck Topology DS-0427A
Contextual Info: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 12V-to-5V 5 Amp, DC/DC Converters Features • n n n n n n n n n n n n n No external I/O filtering required +10.4V to +13.6V input +5V ±50mV , 5 Amp output Synchronous-rectifier topology

Contextual Info: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 5V-to-2.5V 12 Amp, DC/DC Converters Features • Low cost! ■ +4.75V to +5.5V input ■ +2.5V ±25mV , 12 Amp output ■ 200kHz, synchronous-rectifier topology ■ High efficiency, 87%

b1p18

Abstract: 12V-to-5V MA020
Contextual Info: DE2ATEL INNOVATION and EXCELLENCE Single Output UNR Series Non-lsolated, 12V-to-5V 5 Amp, DC/DC Converters Features • No external I/O filtering required ■ +10.4V to +13.6V input ■ +5V ±50mV , 5 Amp output ■ Synchronous-rectifier topology ■ 300kHz switching frequency

ses 554

Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
Contextual Info: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12