P15685EJ1V0DS Search Results

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

9904 120 13843

Abstract: 2SC5435 2SC5800 nec 4308
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

Contextual Info: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor

F 0552

Abstract: PA862T
Contextual Info: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Contextual Info: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor

881-1 nec

Abstract: 741 IC data sheet 2SC5435 2SC5800
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid