P11 TRANSISTOR Search Results

Tyco amp connectors

Abstract: 1005 Ic Data EE-SX461-P11 EE-1005 tyco pull force chart
Contextual Info: Photomicrosensor EE-SX461-P11 Transmissive Dimensions Features All units are in millimeters unless otherwise indicated. Note: • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.

tyco pull force chart

Contextual Info: Photomicrosensor EE-SX461-P11 Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. 171826-3 (Tyco Electronics AMP) 2 (Aperture width) • • • • Snap-in-mounting model. • Connects to Tyco Electronics AMP’s EI-series connectors.

6MBP75RS120

Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Contextual Info: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible

Contextual Info: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features • • • • • • Note: All units are in millimeters unless otherwise indicated. 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.

Contextual Info: MOTOROLA O rder this docum ent by M G P11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C

HPA-R11

Abstract: HPA-D11 HPA-R13 HPA-P11 HPA-T11 HPA-E11 Yamatake hpA HPA-T13 HPA-A11 HPA-P13
Contextual Info: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET EMITTER RECEIVER H P A -T 13 H PA-E13 HPA-R13 H PA -P13 HPA-T11 HPA-E11 HPA-R11 HPA-P11 POLARIZED RETROREFLECTIVE SCAN DIFFUSE SCAN DIFFUSE SCAN SELF-DIAGNOSIS/ FOR TRANSPARENT OBJECTS

EE-SX461-P11

Abstract: photomicrosensor EE-1005
Contextual Info: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features • • • • • • Note: All units are in millimeters unless otherwise indicated. 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.

UL1007

Abstract: tyco EE-1005 EE-SX461-P11
Contextual Info: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.

EE-1005

Abstract: EE-SX461-P11
Contextual Info: Photomicrosensor Transmissive EE-SX461-P11 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels. With a 15-mm-wide slot.

EE-SX461-P11

Abstract: EE-1005
Contextual Info:
EE-SX461-P11 Photo IC Type Photomicrosensor Offers Sensing Distances Up to 15 mm



15-mm wide slot with photo IC output Easy mounting with snap-in mechanism Built-in resistor to protect the LED Simplified wiring using Omron or AMP connectors Ordering Information

EE-SX461-P11

Abstract: Omron tyco pull force chart EE-1005
Contextual Info: Photomicrosensor Transmissive EE-SX461-P11 Be sure to read Precautions on page 25. • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 171826-3 (Tyco Electronics AMP) Snap-in-mounting model. Mounts to 0.8- to 1.6-mm-thick panels.

h48 diode zener

Abstract: MR030 Zener diode H48 FW3227 BOSCH 281 005 019 A1250WV-S-03P Bosch hfm 6 C529 DIODE MR030 ver 0.6 H48 zener diode
Contextual Info: 8 7 6 5 4 3 2 1 3. Block Diagram : CLK SLG8SP512TTR P17 Reset Circuit D Thermal Sensor for DDR temp Intel Thermal Sensor P10 P10 CPU Brightness Control CORE RTC Bat VCCP P27 P56 P30 LED P31 P18 DDR2 533/667 MHz DDRII SODIMM1 B Mem_B Bus P11~P16 C Lid Switch

LP1186

Abstract: LP1401 LP1402 Frequency tripler AM FM TUNER module 30 kv diode fm tuner LP1193
Contextual Info: Radio, audio and television m odules book 3 part 5 f.m. tuner modules Type N o Sup ply voltage V D escription Frequency tuning range MHz Pow er gain 100M H z dB Dimension« mm L P11 8 6 F.M . tuner w ith diode tuning +8 87.4 to 104.5 30 6 2 x 3 1 x 17 L P1402

transistor p14

Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
Contextual Info: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.

DTA114ECA

Abstract: DTA114EKA DTC114ECA DTC114EKA
Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). DTC114EKA DTC114ECA 2) The bias resistors consist of thinfilm resistors with complete isolation to

DTA114ECA

Abstract: DTA114EKA DTC114ECA DTC114EKA dtc114EK
Contextual Info: Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). DTC114EKA DTC114ECA 2) The bias resistors consist of thinfilm resistors with complete isolation to

RF2119

Abstract: PSSOP16 F2119
Contextual Info: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held

schematic inductive proximity sensor

Abstract: proximity switch schematic proximity switch block diagram inductive proximity sensor transistor schematic schematic inductive sensor AN2679 BES070815 military Proximity Sensor B65933A0000X022 inductive proximity sensor schematic
Contextual Info: AN2679 Application note Smart inductive proximity switch Introduction The STEVAL-IFS006V1 inductive proximity switch demonstration board is designed based on the principle of metal body detection using the eddy current effect on the HF losses of a coil. It consists of a single transistor HF oscillator, an ST7LITEUS5 microcontroller and the

DTB713ZE

Abstract: DTB713ZM SC-75A vmt3 DSA0028566
Contextual Info: DTB713ZE / DTB713ZM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB713ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE (sat) is lower than conventional products.

DTB713ZE

Abstract: DTB713ZM SC-75A
Contextual Info: -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTB713ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of

Contextual Info: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

800MHz CDMA Handset Circuit Diagram

Abstract: RF2132
Contextual Info: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

PF816

Contextual Info: RF2132 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

DTD713Z

Contextual Info: DTB713Z series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 1.0kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB713ZM (SC-105AA) lFeatures DTB713ZE SOT-416 (SC-75A) lInner circuit