CDBD620-G
Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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CDBD620-G
CDBD6100-G
mQW-BB032
CDBD620-G
SK620Y
CDBD640-G
SK640Y
CDBD650-G
SK650Y
CDBD660-G
CDBD640-G
CDBD650-G
CDBD660-G
CDBD680-G
CDBD6100-G
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Untitled
Abstract: No abstract text available
Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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CDBD620-G
CDBD6100-G
CDBD620-G
SK620Y
CDBD640-G
SK640Y
CDBD650-G
SK650Y
CDBD660-G
SK660Y
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBD540-HF Thru. CDBD5200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free Features TO-252/DPAK - Batch process design, excellent power dissipation offers better reverse leakage current and thermal
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CDBD540-HF
CDBD5200-HF
O-252/DPAK
MIL-STD-19500
CDBD5040-HF
SK540Y
CDBD5045-HF
SK545Y
CDBD5060-HF
SK560Y
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Untitled
Abstract: No abstract text available
Text: COMCHIP Chip Schottky Barrier Rectifier SMD Diodes Specialist CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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CDBD620-G
CDBD6100-G
CDBD620-G
SK620Y
CDBD640-G
SK640Y
CDBD650-G
SK650Y
CDBD660-G
SK660Y
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fdd 03 15 marking
Abstract: Multilayer metallized paper CBVK741B019 F63TNR FDD6680 FZ9935
Text: TO-252 DPAK Tape and Reel Data TO-252 (DPAK) Packaging Configuration: Figure 1.0 Packaging Description: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Embossed ESD Marking N NTIO AT TE AUTIONS OBSE TO-252 parts are shipped in tape. The carrier tape is
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O-252
O-252
164mm
fdd 03 15 marking
Multilayer metallized paper
CBVK741B019
F63TNR
FDD6680
FZ9935
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TS2950CT-3.3
Abstract: TS2950
Text: TS2950/A 150mA Ultra Low Dropout Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input TO-252 DPAK Pin Definition: 1. Input 2. Ground 3. Output General Description The TS2950/A are low power voltage regulators. These devices are excellent choice for use in battery-powered
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TS2950/A
150mA
O-252
TS2950/A
TS2950CT-3.3
TS2950
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STD25NF20
Abstract: 25NF2
Text: STD25NF20 N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFETs in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Extremely low gate charge
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STD25NF20
DocID024372
STD25NF20
25NF2
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11N65M5
Abstract: STB11N65M5 STF11N65M5 stf11n65 11n65 STP11N65M5 STD11N65M5 STMicroelectronics marking code date diode
Text: STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 N-channel 650 V, 0.43 Ω, 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB Order code VDSS @ TJmax RDS on max 710 V < 0.48 Ω 2 ID STF11N65M5 DPAK D2PAK
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STB11N65M5,
STD11N65M5
STF11N65M5,
STP11N65M5
O-220FP
O-220
STB11N65M5
STF11N65M5
STP11N65M5
11N65M5
stf11n65
11n65
STMicroelectronics marking code date diode
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Untitled
Abstract: No abstract text available
Text: STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet — preliminary data Features Order code STD26P3LLH6 VDSS RDS on max 30 V (1) 0.030 Ω ID PTOT TAB 12 A 40 W 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark
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STD26P3LLH6
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d25nf
Abstract: d25nf10l D25NF10LA d25nf10
Text: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications
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STD25NF10LA
d25nf
d25nf10l
D25NF10LA
d25nf10
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7662
Abstract: No abstract text available
Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■
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STD35NF06L
STD35NF06LT4
7662
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3543
Abstract: No abstract text available
Text: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
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MJD31C
O-252
MJD32C
O-252
MJD31C
MJD31CT4
3543
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D35NF06L
Abstract: No abstract text available
Text: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■
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STD35NF06L
STD35NF06LT4
D35NF06L
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d1 marking code dpak transistor
Abstract: MJD32CT4
Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
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MJD32C
O-252
MJD31C
O-252
MJD32C
MJD32CT4
d1 marking code dpak transistor
MJD32CT4
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d60nf55l
Abstract: No abstract text available
Text: STD60NF55LA N-channel 55 V, 0.012 Ω, 60 A DPAK STripFET II Power MOSFET Features • Order code VDSS RDS on ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Applications ■ Switching application ■ Automotive DPAK Description This Power MOSFET has been developed using
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STD60NF55LA
D60NF55LA
d60nf55l
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STD4NK100Z
Abstract: No abstract text available
Text: STD4NK100Z N-channel 1000 V, 5.6 Ω, 2.2 A SuperMESH Power MOSFET Zener-protected in DPAK package Datasheet — preliminary data Features Order code VDSS RDS on max ID STD4NK100Z 1000 V < 6.8 Ω 2.2 A TAB • Extremely high dv/dt capability ■ 100% avalanche tested
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STD4NK100Z
STD4NK100Z
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STD86N3LH5
Abstract: No abstract text available
Text: STD86N3LH5 N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET V Power MOSFET Features Order code VDSS RDS on max ID STD86N3LH5 30 V < 0.005 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■
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STD86N3LH5
STD86N3LH5
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Untitled
Abstract: No abstract text available
Text: STD80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features 7$% Order code VDS RDS on max. ID STD80N6F6 60 V 5 mΩ 80 A(1) 1. Current limited by package • Designed for automotive applications and
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STD80N6F6
AEC-Q101
DocID023471
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Untitled
Abstract: No abstract text available
Text: STD60NF55LA N-channel 55 V, 0.012 Ω, 60 A DPAK STripFET II Power MOSFET Features • Order code VDSS RDS on ID STD60NF55LA 55V <0.015Ω 60A Low threshold drive 3 1 Applications ■ Switching application ■ Automotive DPAK Description This Power MOSFET has been developed using
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STD60NF55LA
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STD44N4LF6
Abstract: STripFET
Text: STD44N4LF6 N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STD44N4LF6 40 V 12.5 mΩ 44 A • 100% avalanche tested ■ Logic level drive 3 1 Application ■ Switching applications ■ Automotive
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STD44N4LF6
44N4LF6
STD44N4LF6
STripFET
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Untitled
Abstract: No abstract text available
Text: STD25NF20 Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Designed for automotive applications and
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STD25NF20
AEC-Q101
DocID024372
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PDF
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Untitled
Abstract: No abstract text available
Text: STD9NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh II Power MOSFET in DPAK Features Order code VDSS@TJMAX RDS on max. STD9NM50N 550 V ID < 0.79 Ω 5A • 100% avalanche tested ■ Low input capacitances and gate charge ■ Low gate input resistance 3 1 DPAK
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STD9NM50N
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Untitled
Abstract: No abstract text available
Text: STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features TAB 2 3 1 Order code VDSS RDS on max ID PTOT STD26P3LLH6 30 V 0.030 Ω(1) 12 A 40 W 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark
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STD26P3LLH6
DocID023574
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Untitled
Abstract: No abstract text available
Text: STD35N3LH5 N-channel 30 V, 12.5 mΩ, 35 A, DPAK STripFET V Power MOSFET Features • Order code VDSS RDS on max ID STD35N3LH5 30 V < 16 mΩ 35 A 100% avalanche tested 3 ■ Surface mounting DPAK (TO-252) ■ Low gate drive power losses 1 DPAK Applications
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STD35N3LH5
O-252)
STD35N3LH5
D35N3LH5
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