Untitled
Abstract: No abstract text available
Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A
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VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
VNB10N07,
VNK10N07FM,
VNV10N07
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P11NM60AFP
Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Text: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω
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STP11NM60A
STP11NM60AFP
STB11NM60A-1
O-220/TO-220FP/I2PAK
STP11NM60AFP
O-220
P11NM60AFP
B11NM60A
P11NM60A
STP11NM60A
p11nm60
STB11NM60A-1
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STB45N10L
Abstract: No abstract text available
Text: STB45N10L N-CHANNEL 100V - 0.028 Ω - 45A I2PAK/D2PAK POWER MOS TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB45N10L 100 V < 0.036 Ω 45 A TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STB45N10L
100oC
O-262)
O-263)
O-262
O-263
STB45N10L
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STB45NF06
Abstract: No abstract text available
Text: STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 • ■ VDSS RDS on ID 60V <0.028Ω 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of
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STB45NF06
STB45NF06
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STP12NM50FP
Abstract: STP12NM50 12NM50 STB12NM50 STB12NM50-1
Text: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.35Ω <0.35Ω <0.35Ω 12 A 12 A 12 A
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STP12NM50
STP12NM50FP
STB12NM50
STB12NM50-1
O-220/FP/D2PAK/I2PAK
STP12NM50/FP
STB12NM50
STP12NM50FP
12NM50
STB12NM50-1
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4NC60
Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω
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STP4NC60
STP4NC60FP
STB4NC60-1
O-220/TO-220FP/I2PAK
STP4NC60
O-220
O-220FP
O-220)
4NC60
STB4NC60-1
STP4NC60FP
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11NM60
Abstract: STP11NM60FP STB11NM60 STB11NM60-1 STP11NM60
Text: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS on 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω
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STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
O-220/TO-220FP/D2PAK/I2PAK
STP11NM60
STB11NM60
O-220
11NM60
STP11NM60FP
STB11NM60-1
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STGB3NB60HD
Abstract: STTA306
Text: STGB3NB60HD N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT TYPE V CES V CE sat IC STGB3NB60HD 600 V < 2.8 V 3A • ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION
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STGB3NB60HD
O-263
O-263)
STGB3NB60HD
STTA306
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STB4NC60A-1
Abstract: STP4NC60A STP4NC60AFP
Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω
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STP4NC60A
STP4NC60AFP
STB4NC60A-1
O-220/TO-220FP/I2PAK
STP4NC60A
O-220
O-220FP
O-220)
STB4NC60A-1
STP4NC60AFP
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VNB14N04
Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
diode SS 16
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W 20NM60
Abstract: 20nm60 STB20NM60-1 STP20NM60 STB20NM60 STP20NM60FP diode k 0368
Text: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ VDSS RDS on 600 600 600 600 < < < < V V V V 0.29 0.29 0.29 0.29 Ω
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STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
O-220/FP/D2PAK/I2PAK
STP20NM60
STB20NM60
W 20NM60
20nm60
STB20NM60-1
STP20NM60FP
diode k 0368
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stp6nc60fp
Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP6NC60
STP6NC60FP
STB6NC60-1
O-220/TO-220FP/I2PAK
6NC60
O-220
O-220FP
stp6nc60fp
stp6nc60fp equivalent
STB6NC60-1
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L4940
Abstract: L4940D2T10-TR L4940D2T12-TR L4940D2T5-TR L4940V5 L4940V85 L4940XX10 L4940XX12 L4940XX5 L4940XX85
Text: L4940XX5, L4940XX85 L4940XX10, L4940XX12 Very low drop 1.5 A regulator Features • Precise 5, 8.5, 10, 12 V outputs ■ Low dropout voltage 450 mV typ. at 1 A ■ Very low quiescent current ■ Thermal shutdown ■ Short circuit protection ■ Reverse polarity protection
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L4940XX5,
L4940XX85
L4940XX10,
L4940XX12
O-220
L4940
O-220,
O-220FP
L4940D2T10-TR
L4940D2T12-TR
L4940D2T5-TR
L4940V5
L4940V85
L4940XX10
L4940XX12
L4940XX5
L4940XX85
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KD1084
Abstract: KD1084AD2T18R KD1084ADT-R KD1084AXX KD1084AXX18
Text: KD1084AXX KD1084AXX18 5 A low drop positive voltage regulator adjustable and fixed Features • Typical dropout 1.3 V at 5 A ■ Three terminal adjustable or fixed output voltage 1.8 V, 3.3 V. ■ Guaranteed output current up to 5 A ■ Output tolerance ±1 % at 25 °C and ± 2 % in full
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KD1084AXX
KD1084AXX18
KD1084
KD1084AD2T18R
KD1084ADT-R
KD1084AXX
KD1084AXX18
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8NC50
Abstract: STB8NC50-1 STP8NC50 STP8NC50FP
Text: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP8NC50
STP8NC50FP
STB8NC50-1
O-220/TO-220FP/I2PAK
8NC50
O-220
O-220FP
STB8NC50-1
STP8NC50FP
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L9 Zener
Abstract: STB5NC70Z STB5NC70Z-1 STP5NC70Z STP5NC70ZFP
Text: STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP5NC70Z/FP 700V <2Ω 4.6 A STB5NC70Z/-1 700V <2Ω 4.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω
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STP5NC70Z
STP5NC70ZFP
STB5NC70Z
STB5NC70Z-1
O-220/FP/D
STP5NC70Z/FP
STB5NC70Z/-1
L9 Zener
STB5NC70Z-1
STP5NC70ZFP
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L9 Zener
Abstract: STB8NC70Z STB8NC70Z-1 STP8NC70Z STP8NC70ZFP
Text: STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP8NC70Z/FP 700V < 1.2 Ω 6.8 A STB8NC70Z/-1 700V < 1.2 Ω 6.8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω
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STP8NC70Z
STP8NC70ZFP
STB8NC70Z
STB8NC70Z-1
O-220/FP/D2PAK/I2PAK
STP8NC70Z/FP
STB8NC70Z/-1
O-220
O-220FP
L9 Zener
STB8NC70Z-1
STP8NC70ZFP
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VNB10N07
Abstract: VNK10N07FM VNP10N07FI VNV10N07
Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A
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VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
VNB10N07,
VNK10N07FM,
VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
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STB5NC50
Abstract: STB5NC50-1 STP5NC50 STP5NC50FP
Text: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω
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STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
O-220/FP/D2PAK/I2PAK
STP5NC50
STB5NC50
O-220
STB5NC50-1
STP5NC50FP
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B80NE03L
Abstract: JESD97 STB80NE03L-06 b80ne
Text: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB80NE03L-06 30V <0.006Ω 80A • Exceptional dv/dt capability ■ Low gate charge 100°C ■ 100% Avalanche tested 3 1 D2PAK Description
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STB80NE03L-06
B80NE03L
JESD97
STB80NE03L-06
b80ne
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GCBZ670
Abstract: STB75NE75 25c016
Text: STB75NE75 N - CHANNEL 75V - 0.01 Q. - 75A - D^PAK STripFET POWER MOSFET TYPE STB75NE75 V dss R d S o i i Id 75 V < 0 . 0 1 3 Q. 75 A • . . . TYPICAL R D S (o n ) =0.01 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STB75NE75
STB75NE75
O-263
GCBZ670
25c016
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ISD 1720
Abstract: STB100NF03L-03-1
Text: STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION
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STB100NF03L-03-1
O-262
ISD 1720
STB100NF03L-03-1
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P22NM60
Abstract: STB22NM60 STB22NM60-1 STF22NM60 STP22NM60 STW22NM60 ST T4 0560 F22NM60 V4011 w22nm60
Text: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 • ■ ■ ■ ■ VDSS RDS on 600 600 600
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STP22NM60
STF22NM60
STB22NM60
STB22NM60-1
STW22NM60
O-220/FP/D2PAK/I2PAK/TO-247
STP22NM60
STB22NM60
STB22NM60-1
P22NM60
STF22NM60
STW22NM60
ST T4 0560
F22NM60
V4011
w22nm60
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b200NF
Abstract: B200NF03 STB200NF03 STB200NF03-1 STB200NF03T4 STP200NF03
Text: STP200NF03 STB200NF03 STB200NF03-1 N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB200NF03/-1 STP200NF03 • ■ ■ VDSS RDS on ID 30 V 30 V <0.0036 Ω <0.0036 Ω 120 A(*) 120 A(*) TYPICAL RDS(on) = 0.0032Ω
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STP200NF03
STB200NF03
STB200NF03-1
PAK/TO-220
STB200NF03/-1
b200NF
B200NF03
STB200NF03-1
STB200NF03T4
STP200NF03
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