P01101067 Search Results

SL5511

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS SL5500 SL5501 SL5504 SL5511 PACKAGE SCHEMATIC ANODE 1 6 6 BASE 6 CATHODE 2 1 5 COL 1 3 4 EMITTER 6 1 DESCRIPTION The SL5500, SL5501, SL5504 and SL5511 are optically coupled isolators each consisting of an infrared emitting GaAs diode and

optocouplers 501 IC

Abstract: TIL113 CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

Fairchild 4N32

Abstract: 4n29 optocoupler 4n33s fairchild
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

K1 MARK 6PIN

Abstract: MOC1193S
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

CYN17

Abstract: 08-if
Contextual Info: CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108 Phototransistor Optocouplers Features Applications • UL recognized File # E90700 ■ VDE recognized – Add option V for white package (e.g., CNY17F2VM)

opto-coupler

Abstract: 4n29
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

E90700

Abstract: 130726
Contextual Info: Safety Agency Certification/Reference Numbers Agency Designation Agency Name Country 35 Package Description (Designation) Certificate/Reference Numbers BABT British Approvals Board for Telecommunications (UK) 4-Pin (White) Half Pitch Mini-Flat Package 4-Pin (White) Full Pitch Mini-Flat Package

SL5511

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS SL5500 SL5501 SL5504 SL5511 PACKAGE SCHEMATIC ANODE 1 6 6 BASE 6 CATHODE 2 1 5 COL 1 3 4 EMITTER 6 1 DESCRIPTION The SL5500, SL5501, SL5504 and SL5511 are optically coupled isolators each consisting of an infrared emitting GaAs diode and

MCT5200

Contextual Info: LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 Description The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. 6 6 The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering

4N33 APPLICATION NOTE

Abstract: 4N32SVM
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

CNX48U

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

6-PIN marking FA

Abstract: QT Optoelectronics K/bar code phototransistor
Contextual Info: 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description • UL recognized File # E90700, Volume 2 The general purpose optocouplers consist of a gallium

MCT2

Abstract: 14 pin ic DIP PACKAGE MCT2W MCT2EM MCT2E application
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 BLACK PACKAGE NO -M SUFFIX WHITE PACKAGE (-M SUFFIX) 6 6 6 6 1 1 1 1 6 6 1 1 DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin

CNX48U

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

MCT5200

Contextual Info: LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 Description The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. 6 6 The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering

4N32

Abstract: 4N33 4N32 test circuit 4N33 APPLICATION NOTE
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

CYN17

Abstract: ML4818 MOC8102.300
Contextual Info: CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108 Phototransistor Optocouplers Features Applications • UL recognized File # E90700 ■ VDE recognized – Add option V for white package (e.g., CNY17F2VM)

33SD

Abstract: CNY17F-3 CNY17F Fairchild
Contextual Info: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled

H11f1 variable resistor 500k

Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F3

Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

CNX48U

Abstract: optocouplers 501 optocouplers 501 IC h11b255 H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

74LS04 fan-out

Abstract: 74OL6011 6010 OPTOCOUPLER
Contextual Info: OPTOPLANAR HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS TTL BUFFER TTL INVERTER CMOS BUFFER CMOS INVERTER LSTTL TO PACKAGE 6 74OL6000 74OL6001 74OL6010 74OL6011 SYMBOL BUFFER 6 1 1 INVERTER 6 1 DESCRIPTION OPTOLOGIC is the first family of truly logic compatible optically coupled logic interface gates.

h11dx

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.