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    P008B 1150 Search Results

    P008B 1150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CMT1-15.0-1L Coilcraft Inc Single Phase EMI Filter, ROHS COMPLIANT PACKAGE-4 Visit Coilcraft Inc
    FCT1-150K2SLB Coilcraft Inc SMPS Transformer, 4W, ROHS COMPLIANT Visit Coilcraft Inc
    FCT1-150M2SLB Coilcraft Inc SMPS Transformer, 15W, ROHS COMPLIANT Visit Coilcraft Inc
    SER2011-501MLB Coilcraft Inc General Purpose Inductor, 0.5uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT Visit Coilcraft Inc
    FCT1-150L2SLD Coilcraft Inc SMPS Transformer, 8W, ROHS COMPLIANT Visit Coilcraft Inc

    P008B 1150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P008B DIODE

    Abstract: STN1NB80
    Text: STN1NB80 N - CHANNEL 800V - 16Ω - 0.2A - SOT-223 PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STN1NB80 OT-223 P008B DIODE STN1NB80

    N1NB80

    Abstract: N1NB STN1NB80 DD 31 N 800 K schematic diagram of crossover
    Text: STN1NB80  N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE ST N1NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 0.2 A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STN1NB80 OT-223 N1NB80 N1NB80 N1NB STN1NB80 DD 31 N 800 K schematic diagram of crossover

    STN1NB80

    Abstract: No abstract text available
    Text: STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STN1NB80 OT-223 STN1NB80

    STN1NB80

    Abstract: MAX 233 INTERNAL CIRCUIT
    Text: STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STN1NB80 OT-223 STN1NB80 MAX 233 INTERNAL CIRCUIT