Heatsinks sk 499
Abstract: Heatsinks sk 489 THFK 220
Text: clcktronik^ Retaining springs for transistors art. no. for su itable for transistor- heatsinks spring force [N] housing THFU 1 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 2 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 3 TO 218 TO 220 TO 247 TO 248 TO 3 P material:
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E2-15
Heatsinks sk 499
Heatsinks sk 489
THFK 220
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Untitled
Abstract: No abstract text available
Text: 16-Bit, 200 MSPS/250 MSPS Analog-to-Digital Converter AD9467 Preliminary Technical Data 75.5 dBFS SNR to 170 MHz at 250 MSPS @ 2.5 V p-p FS 74 dBFS SNR to 170 MHz at 250 MSPS @ 2.0 V p-p FS 90 dBFS SFDR to 300 MHz at 250 MSPS @ −1 dBFS at 2.5 V p-p FS
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16-Bit,
MSPS/250
AD9467
121809-B
72-Lead
CP-72-5)
AD9467BCPZ-250
AD9467BCPZ-200
AD9467-200EBZ
AD9467-250EBZ
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Untitled
Abstract: No abstract text available
Text: Retaining springs for transistors a rt. no. fo r transistorhousing THF 409 220 1 THF 409 220 2 THF 249 suitable fo r heatsinks TO TO TO TO TO 218 220 3 P 247 248 SK 4 0 9 SK 4 5 9 TO TO TO TO TO 218 220 3 P 247 248 SK 145 SK 185 SK 4 3 7 TO 2 2 0 FK 2 4 9
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E2-15
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PDF
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 60A/200V/trr : 50nsec KCF60A20E FEATURES o Sim ilar to TO-247AC x 2 Case o Dual Diodes-Cathode Common O U ltra-Fast Recovery OLow F orw ard V oltage Drop o High Surge Capability A p p ro x . N et W eigh t : 30 Grams MAXIMUM RATINGS '\T y p e
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0A/200V/trr
50nsec
KCF60A20E
O-247AC
0DD227M
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Thomson-CSF POLYESTER capacitors
Abstract: Thomson-CSF POLYESTER capacitors TPC capacitor polyester 1u 630v Thomson-CSF capacitors Thomson-CSF Thomson-CSF passive components uk ah 102 m capacitor thomson Metallized Polyester Film Capacitor Thomson-csf capacitor Thomson-CSF film capacitors
Text: Metallized polyester film capacitors BG range - 10 mm to 27.5 mm pitch Contents Characteristics of the metallized polyester film capacitor p. 2 Boxed metallized polyester capacitor BG serie range p. 4 Packaging p. 6 How to order p. 7 Worldwide sales offices
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NTC 4,7
Abstract: ntc 4.7 NTC Inrush Current Limiters Thermistor ntc 2.5 ohm Thermistor cross reference IEC 68-2-6 NTC 2.5 UA 741 datasheet NTC 4,7 S M i2 200-5
Text: NTC Thermistors Inrush current limiters Contents NTC General Characteristics p. 2 NTC as inrush current limiter p. 4 How to order p. 5 Technical data p. 6 Taping characteristics p. 14 Packaging p. 16 Manufacturing process and quality assurance p. 18 Reliability
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MS3191-1
Abstract: CCT-408M 995-0001-761 031-1046-002 S-249-1632-000 S-249-1400-000 P-249-1399-000 S-249-1634-000 DPX2-34 031-9206-004
Text: DPX DPX ARINC 404 How to Order DPX DPX D P X3/D P X4 3 4 ME ME -57 -57 P P -57 P -57 P -57 •57 P P -57 P - 34 - 34 -00 01 -00 01 SERIES PREFIX SHELL-CLASS -CONTACT ARRANGEMENT Side A CONTACT TYPE-CONTACT ARRANGEMENT (Side B) CONTACT TY P E -SERIES PREFIX
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upc 1185 h
Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
Text: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions
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AS3B119GM10M
AS5B125EM50M
AS6B118GM50M
1310nm)
1550nm)
upc 1185 h
mobis
Delay linear sweep generator using 555 timer
Anritsu ML524B operation manual
for vip tracking gsm and gps technology
26UA42
MU909014A1
nokia 2700 classic circuit diagram
MF2400C
MA8120E
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PDF
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SR2020P
Abstract: SR2020PT sr2015
Text: E SR2020PT - SR20150PT TAIWAN SEMICONDUCTOR 20.0 AMPS. Schottky Barrier Rectifiers TO-3 P/TO-247AD RoHS COM PLIANCE Trir-— : ! ny.cj. - a Features <•> ❖ <5*<■ ■fr ❖ <5*-4- <- Dual rectifier construction. positive ce nter-ta p Plastic pack fi-ga has U nderwritars La boratory
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SR2020PT
SR20150PT
-247AD
2605C.
SR2020PTTHRU
SR20150PT)
SR2020P
sr2015
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F1S30P06
Abstract: 30p06
Text: RFG30P06, RFP30P06, r f 1 S30P06, RF1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel
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RFG30P06,
RFP30P06,
S30P06,
RF1S30P06SM
O-247
P06SM
81e-8)
23e-1
97e-3
37e-5)
F1S30P06
30p06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE KCQ120A06E 120A/60V FEA TU R ES o S im ila r to TO-247AC X 2 Case O D u a l Diodes —C athode Com m on O L o w F o rw a rd V o lta g e Drop o L o w P o w e r Loss, H ig h E ffic ie n c y o H ig h Su rg e C a p a b ility A p p ro x .
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O-247AC
20A/60V
KCQ120A06E
50Hzi:
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f25nm60n
Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Text: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application
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STB25NM60Nx
STF25NM60N
STP25NM60N
STW25NM60N
O-220,
O-220FP,
O-247
STB25NM60N
STB25NM60N-1
f25nm60n
P25NM60
w25nm60
F25NM60
P25NM60N
w25nm60n
F25NM
TO247 package dissipation
p25n
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Untitled
Abstract: No abstract text available
Text: + 85°C Low Profile Radial Lead Aluminum Electrolytic Capacitors For all g e n e ra l p u r p o s e a p p li c a ti o n s FEATURES Voltage range: 6.3WVDC to 50WVDC Solvent tolerant end seals standard Low Profile Capacitance range: 22 fjF to 10,000 fjF SPECIFICATIONS
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50WVDC
120Hz,
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Diodes International IO R Rectifier Fast Recovery Diodes in D-Pak, D 2Pak, TO-220 and TO-247 Packages QUIET/A? Series 600V, 60ns IF ¡AVG: P a c k a g e S ty le V o ita a e G r a d e 200 tO A 10A D -P ak D ?-Pak T O -22 0A C % # H EW F02S 1.1V
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O-220
O-247
10ETF02S
10ETF04S
20ETF02S
O-22QAC
20ETF02
20ETF04
20ETF06
10ETF02
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Untitled
Abstract: No abstract text available
Text: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitors F o r all a p p l i c a t i o n s i n c l u d i n g s w i t c h i n g p o w e r s u p p l i e s FEATURES • Highest Reliability, up to 5000 hours ■ Voltage range: 6.3WVDC to 63 WVDC
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120Hz,
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28N30
Abstract: No abstract text available
Text: ÖIXYS HiPerFAST IGBT IXGH 28N30 IXGT 28N30 V CES ^C2 V C E s a t ty p t fi(typ) 300 V 56 A 1.6 V 180 ns P re lim in a ry d ata sheet Symbol Test Conditions TO-247 AD T, = 25° C to 150° C 300 V T.J = 25° C to 150° C: RG „t = 1 MQ 300 V Continuous
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28N30
O-247
O-268
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DDR2-533
Abstract: JESD51-2
Text: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS2G431M
HY5PS2G831M
1HY5PS2G431M
1HY5PS2G831M
DDR2-533
JESD51-2
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY5PS2G431M
HY5PS2G831M
1HY5PS2G431M
1HY5PS2G831M
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PDF
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JESD51-2
Abstract: DDR2-533 DDR2-667 AL-200
Text: HY5PS2G431M[P] HY5PS2G431M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY5PS2G431M
HY5PS2G831M
1HY5PS2G431M
JESD51-2
DDR2-533
DDR2-667
AL-200
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PDF
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60P06E
Abstract: 6b69e RS111
Text: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l
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RFG60P06E
O-247
72e-3
43e-3
91e-7
98e-9
11e-1
34e-3
46e-12)
15e-10
60P06E
6b69e
RS111
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PDF
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transistor P 112
Abstract: transistor c 144 marking f5 sot-89 marking 149 A 144 transistor transistor 136 138 140
Text: Transistors Surface Mounted Leaded P ack ag es Available- -60 P ack ag es Available- -110 POWER MOSFET- -61 POWER MOSFET— -112 61 MPT • CPT F5 • PSD Transistors- 63 CPT • MRT • HRT • T0-220FP • TO-247
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T0-220FP
O-247
SC-59/Japanese
OT-23)
O-92L
O-92LS
O-126
O-126FP
transistor P 112
transistor c 144
marking f5 sot-89
marking 149
A 144 transistor
transistor 136 138 140
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hynix dram numbering
Abstract: DDR2-533 DDR2-667 JESD51-2
Text: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY5PS2G431M
HY5PS2G831M
1HY5PS2G431M
1HY5PS2G831M
71Ball
hynix dram numbering
DDR2-533
DDR2-667
JESD51-2
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 4 5 7 REVISIONS ISS d e s c r i p t i q n \p e r ZONE REQUEST\DATE 4 - 0 .6 SO. 1.1 RGB -CONNECTOR -PA CKA G ING D IM E N S IO N S ARE IN AC C O R D IN G IN TRAY TO OT'r: DIN 100 MOUNTING 41-626 WITH C O M M P PC IAL 02 247 PART NUMBER AND D AT P Âmahen
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Untitled
Abstract: No abstract text available
Text: + 85°C Standard Axial Lead Aluminum Electrolytic Capacitors F o r all g e n e r a l p u r p o s e a p p l i c a t i o n s FEATURES High ripple current ratings Wide capacitance range: 0.47 fjF to 22000 ¡j F Wide voltage range: 10 WVDC to 450 WVDC Solvent tolerant end seals standard
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120Hz,
00021b4
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PDF
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