Si6441DQ
Abstract: Si6441DQ-T1
Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8
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Si6441DQ
Si6441DQ-T1
S-03984--Rev.
19-May-03
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Untitled
Abstract: No abstract text available
Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si4501ADY
2002/95/EC
Si4501ADY-T1-E3
Si4501ADY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little
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FDR858P
028ications
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Si6459BDQ
Abstract: Si6459BDQ-T1
Text: Si6459BDQ Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) −60 60 FEATURES rDS(on) (W) ID (A) 0.115 @ VGS = −10 V −2.7 0.150 @ VGS = −4.5 V −2.4 D TrenchFETr Power MOSFET S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S D * Source Pins 2, 3, 6 and 7
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Si6459BDQ
Si6459BDQ-T1
S-32220--Rev.
03-Nov-03
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F63TNR
Abstract: F852 FDR8308P SOIC-16 SSOT-8
Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
F63TNR
F852
FDR8308P
SOIC-16
SSOT-8
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Schottky Diode 40V 6A
Abstract: CBVK741B019 F011 F63TNR F852 FDFS2P102 FDS9953A L86Z
Text: FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102
FDFS2P102
Schottky Diode 40V 6A
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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fdfs2p102a
Abstract: No abstract text available
Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102A
fdfs2p102a
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F63TNR
Abstract: FDFS2P102A soic-8 33a
Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102A
F63TNR
FDFS2P102A
soic-8 33a
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Untitled
Abstract: No abstract text available
Text: FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P103
FDFS2P103
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si4925ddy-t1-ge3
Abstract: No abstract text available
Text: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)
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Si4925DDY
Si4925DDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)
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Si4925DDY
Si4925DDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si2329
Abstract: SI2329DS
Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8
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Si2329DS
2002/95/EC
O-236
OT-23)
Si2329DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
si2329
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FDY2001PZ
Abstract: SC89
Text: FDY2001PZ Dual P-Channel – 2.5V Specified PowerTrench MOSFET General Description Features This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V
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FDY2001PZ
FDY2001PZ
SC89
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FDY101PZ
Abstract: SC89
Text: FDY101PZ Single P-Channel – 2.5V Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V
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FDY101PZ
FDY101PZ
SC89
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Untitled
Abstract: No abstract text available
Text: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch
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Si6441DQ
Si6441DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8
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Si4501BDY
2002/95/EC
Si4501BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8
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Si4501BDY
2002/95/EC
Si4501BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si4554
Abstract: si4554dy
Text: Si4554DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 40 0.024 at VGS = 10 V 8e 0.026 at VGS = 8 V 8e 0.027 at VGS = 4.5 V 8 0.027 at VGS = - 10 V - 8e e 0.028 at VGS = - 8 V
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Si4554DY
Si4554DY-T1-GE3
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4554
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.0480 RDS(on) (Ω) at VGS = -4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0480 RDS(on) () at VGS = - 4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2U 73 diode
Abstract: siliconix
Text: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET
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6415DQ
S-49519--
18-Dec-96
2U 73 diode
siliconix
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Untitled
Abstract: No abstract text available
Text: SÌ6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V o s <VJ Rd S<ON| (3 ) >d (A) 0.020 @ VGS = -4 .5 V ±6.5 0.030 @ VGS = -2.5 V ±5.2 e 't'V ' A -20 s* Q TSSOP-8 O il Source Pins 2, 3 ,6 and 7 must be tied common. It Top View Ô D P-Channel MOSFET
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6463DQ
S-51477--
17-Feb-97
S86463DQ_
17-Fet
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Untitled
Abstract: No abstract text available
Text: SÌ6433DQ P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) r DS(on) ( ^ ) 12 0.06 @ VGs = -4.5 V 0.09 @ VGs = -2.5 V I d (A) ±4.0 ±3.0 s* Q ni TSSOP-8 *Source Pins 2, 3, 6 and 7 must be tied common. Top View Ô D P-Channel MOSFET Absolute Maximum Ratings (TA = 25 °C Unless Otherwise Noted)
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6433DQ
S-49534--
-Oct-97
06-Oct-97
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Untitled
Abstract: No abstract text available
Text: SI6465DQ VISHAY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.012 @ VGS = —4.5 V ±8 .8 0.017 @ VGS = —2.5 V ±7 .4 0.025 @ VGS = -1 .8 V ±6 .0 I* ' v* so TSSOP-8 D S D Si6465DQ 'Source Pins 2, 3, 6 and 7
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SI6465DQ
Si6465DQ
S-56943â
02-Nov-98
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